BSP19 ZETEX | Alldatasheet

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Technical content

ISSUE 3 – FEBRUARY 1996

FEATURES

*H i g h VCEO – 350V * Low saturation voltage COMPLEMENTARY TYPE – BSP16 PARTMARKING DETAIL – BSP19 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 400 V Collector-Emitter Voltage V CEO 350 V Emitter-Base Voltage V EBO 5V Peak Pulse Current I CM 1A Continuous Collector Current I C 0.5 A Power Dissipation at T amb =25°C P tot 2W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 400 V IC=100µA Collector-Emitter Breakdown Voltage V(BR)CEO 350 V I C=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5V IE=100µ A Collector Cut-Off Current ICBO 20 nA V CB=300V Emitter Cut-Off Current I EBO 0.1 µ A VEB=3V Collector-Emitter Saturation Voltage VCE(sat) 0.5 V I C=50mA, IB=4mA* Base-Emitter Saturation Voltage VBE(sat) 1.3 V I C=50mA, IB=4mA* Static Forward Current Transfer Ratio hFE 40 IC=20mA, VCE=5V* IC=100mA, VCE=5V* Transition Frequency f T 70 MHz I C=10mA, VCE=10V f = 20MHz Output Capacitance C obo 10 pF V CB=20V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device For typical characteristics graphs see FZT658 datasheet. BSP19 C C E B 3 - 60