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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Features

  • N-channel
  • Depletion mode
  • dv /dt rated
  • Available with V GS(th) indicator on reel
  • Pb-free lead plating; RoHS compliant
  • Qualified according to AEC Q101
  • Halogen-free according to IEC61249-2-21 9.18 13.14 24.96102.48 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A=25 °C 0.21 A T A=70 °C 0.17 Pulsed drain current I D,pulse T A=25 °C 0.83 Reverse diode dv /dt dv /dt I D=0.21 A, V DS=20 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS ±20 V ESD sensitivity (HBM) as per JESD-A114-HBM 1A (>250V, <500V) Power dissipation P tot T A=25 °C 1.8 W Operating and storage temperature T j, T stg -55 ... 150 °C IEC climatic category; DIN IEC 68-1 55/150/56 1) see table on next page and diagram 11 Value VDS 400 V RDS(on),max 24 W IDSS,min 40 mA Product Summary PG-SOT223 Type Package Tape and Reel Marking Halogen- Packaging BSP179 PG-SOT223 H6327: 1000 pcs/reel BSP179 Yes Non dry BSP179 PG-SOT223 H6906: 1000 pcs/reel sorted in VGS(th) bands1) BSP179 Yes Non dry Rev. 2.0 page 1 2015-06-23

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - soldering point (pin 4) R thJS - - 25 K/W SMD version, device on PCB R thJA minimal footprint - - 115 6 cm2 cooling area2) - - 70 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=-3 V, I D=250 µA 400 - - V Gate threshold voltage V GS(th) V DS=3 V, I D=94 µA -2.1 -1.4 -1 Drain-source cutoff current I D(off) V DS=400 V, V GS=-3 V, T j=25 °C - - 0.1 µA V DS=400 V, V GS=-3 V, T j=150 °C - - 10 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA On-state drain current I DSS V GS=0 V, V DS=10 V 40 - - mA Drain-source on-state resistance R DS(on) V GS=0 V, I D=0.01 A - 18 24 W V GS=10 V, I D=0.21 A - 13 18 Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=0.17 A 0.21 - S Threshold voltage V GS(th) sorted in bands3) J V GS(th) V DS=3 V, I D=94 µA -1.2 - -1 V K -1.35 - -1.15 L -1.5 - -1.30 M -1.65 - -1.45 N -1.8 - -1.6 drain connection. PCB is vertical in still air. 3) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Values 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (single layer, 70 µm thick) copper area for Rev. 2.0 page 2 2015-06-23

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics4) Input capacitance C iss - 102 135 pF Output capacitance C oss - 10 14 Reverse transfer capacitance Crss - 6 9 Turn-on delay time t d(on) - 6.1 9.2 ns Rise time t r - 8.8 13.1 Turn-off delay time t d(off) - 17 25 Fall time t f - 68 102 Gate Charge Characteristics4) Gate to source charge Q gs - 0.43 0.65 nC Gate to drain charge Q gd - 2.2 3.3 Gate charge total Q g - 4.5 6.8 Gate plateau voltage V plateau - 0.49 - V Reverse Diode Diode continous forward current I S - - 0.21 A Diode pulse current I S,pulse - - 0.83 Diode forward voltage V SD V GS=-3 V, I F=0.21 A, T j=25 °C - 0.84 1.1 V Reverse recovery time4) t rr - 111 167 ns Reverse recovery charge4) Q rr - 390 584 nC 4) Defined by design. Not subjected to production test V R=200 V, I F=0.21 A, di F/dt =100 A/µs T A=25 °C Values V GS=-3 V, V DS=25 V, f =1 MHz V DD=200 V, V GS=-3...5 V, I D=0.2 A, R G,ext=25 W V DD=400 V, I D=0.21 A, V GS=-3 to 5 V Rev. 2.0 page 3 2015-06-23

1 Power dissipation 2 Drain current

P tot)=f(T A) I D=f(T A); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 10 µs 100 µs 1 ms 10 ms DC 100 101 102 103 10-3 10-2 10-1 100 101 ID [A] VDS [V] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10-4 10-3 10-2 10-1 100 101 102 100 101 102 ZthJA [K/W] tp [s] 0,5 1,5 0 40 80 120 160 Ptot [W] TA [°C] 0,05 0,1 0,15 0,2 0,25 0 40 80 120 160 ID [A] TA [°C] Rev. 2.0 page 4 2015-06-23

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(VDS); Tj=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C -0.2 V -0.1 V 0 V 0.1 V 0.2 V 0.5 V 1 V 10 V 0 0,05 0,1 0,15 0,2 0,25 RDS(on) [W] ID [A] 0,05 0,1 0,15 0,2 0,25 -2 -1 0 1 ID [A] VGS [V] 0,05 0,1 0,15 0,2 0,00 0,04 0,08 0,12 gfs [S] ID [A] -0.2 V -0.1 V 0 V 0.1 V 0.2 V 0.5 V 1 V 10 V 0,1 0,2 0,3 0 2 4 6 8 10 ID [A] VDS [V] Rev. 2.0 page 5 2015-06-23

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.01 A; V GS=0 V V GS(th)=f(T j); V DS=3 V; I D=94 µA parameter: I D 11 Threshold voltage bands 12 Typ. capacitances I D=f(V GS); V DS=3 V; T j=25 °C C =f(V DS); V GS=-3 V; f =1 MHz 94 µA J K L M N 0,01 0,1 -2 -1,5 -1 -0,5 ID [mA] VGS [V] typ 98 % -60 -20 20 60 100 140 RDS(on) [W] Tj [°C] typ 98 % 2 % -2,5 -1,5 -0,5 -60 -20 20 60 100 140 VGS(th) [V] Tj [°C] Ciss Coss Crss 100 101 102 103 0 10 20 30 C [pF] VDS [V] Rev. 2.0 page 6 2015-06-23

13 Forward characteristics of reverse diode 15 Typ. gate charge I F=f(VSD) V GS=f(Q gate); I D=0.21 A pulsed parameter: T j parameter: V DD

16 Drain-source breakdown voltage

V BR(DSS)=f(T j); I D=250 µA 300 340 380 420 460 500 -60 -20 20 60 100 140 VBR(DSS) [V] Tj [°C]

0.2 VDS(max)

0.5 VDS(max)

0.8 VDS(max)

0 0,4 0,8 1,2 1,6 2 2,4 2,8 3,2 3,6 4 VGS [V] Qgate [nC] 25°C 150°C 25 °C, 98% 25°C 98% 150°C 98% 0,01 0,1 0 0,5 1 1,5 2 IF [A] VSD [V] Rev. 2.0 page 7 2015-06-23

Package Outline: 9.18 13.14 24.96 102.48 Footprint: Packaging: V DS=3 V, I D=94 µA 167 584 Dimensions in mm Rev. 2.0 page 8 2015-06-23