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Semiconductor Group 04 / 19981 BSP 171 P Preliminary data SIPMOSÒ Power Transistor

  • P-Channel
  • Enhancement mode
  • Avalanche rated
  • Logic Level
  • dv/dt rated Pin 1 Pin2/4 Pin 3 G D S Type VDS ID RDS(on) @ VGS Package Ordering Code BSP 171 P -60 V -1.8 A 0.3 Ω VGS = -10 V P-SOT223-4-1 Q67041-S4019 Continuous drain current TA = 25 °C TA = 100 °C ID -1.8 -1.15 A -7.2Pulsed drain current TA = 25 °C ID puls mJAvalanche energy, single pulse ID = -1.8 A, VDD = -25 V, RGS = 25 Ω 70EAS Avalanche current,periodic limited by Tjmax IAR A-1.8 0.18 mJAvalanche energy,periodic limited by Tj(max) EAR KV/µsdv/dtReverse diode d v/dt IS = -1.8 A, VDD ≤ V(BR)DSS, di/dt = 100 A/µs, Tjmax = 150 °C Gate source voltage VGS ±14 V

1.8 WPower dissipation , TA = 25 °C Ptot

°COperating temperature -55 ...+150Tj Storage temperature Tstg -55 ...+150 55/150/56IEC climatic category; DIN IEC 68-1 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Value UnitParameter Symbol

Semiconductor Group 04 / 19982 BSP 171 P Preliminary data

Electrical Characteristics

at Tj = 25 °C, unless otherwise specified typ. max.min. Thermal Characteristics tbd-RthJSThermal resistance, junction -soldering point (Pin 4) K/Wtbd -Thermal resistance, junction - ambient RthJA -- SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area F) RthJA tbd tbd Static Characteristics - --60V(BR)DSSDrain- source breakdown voltage VGS = 0 V, ID = -0.25 mA V -1 -1.5VGS(th)Gate threshold voltage, VGS = VDS ID = -460 µA, Tj = 25 °C -0.1 µAZero gate voltage drain current VDS = -60 V, VGS = 0 V, Tj = -40 °C VDS = -60 V, VGS = 0 V, Tj = 25 °C VDS = -60 V, VGS = 0 V, Tj = 150 °C IDSS -0.1 -100 -10 -100 nA-IGSSGate-source leakage current VGS = -20 V, VDS = 0 V 0.3 0.21 Drain-Source on-state resistance VGS = -4.5 V, ID = -1.5 A VGS = -10 V, ID = -1.8 A RDS(on) 0.45 0.3 Ω

Semiconductor Group 04 / 19983 BSP 171 P Preliminary data Parameter Values UnitSymbol max.min. typ.at Tj = 25 °C, unless otherwise specified Dynamic Characteristics STransconductance VDS≥2*ID*RDS(on)max , ID = -1.8 A 31gfs - pFInput capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz Ciss 460- 365 135- 105CossOutput capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz 50Reverse transfer capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz 40-Crss nsTurn-on delay time VDD = -30 V, VGS = -10 V, ID = -1.8 A, RG = 6 Ω 20- 13td(on) Rise time VDD = -30 V, VGS = -10 V, ID = -1.8 A, RG = 6 Ω tr 45- 30 300- 200td(off)Turn-off delay time VDD = -30 V, VGS = -10 V, ID = -1.8 A, RG = 6 Ω Fall time VDD = -30 V, VGS = -10 V, ID = -1.8 A, RG = 6 Ω - 75tf 115

Semiconductor Group 04 / 19984 BSP 171 P Preliminary data Parameter Symbol Values Unit at Tj = 25 °C, unless otherwise specified min. typ. max. Dynamic Characteristics Gate charge at threshold VDD = -24 V, ID≥ -0,1 A, VGS = 0 to - 1 V QG(th) - 0.6 0.9 nC Gate charge at Vgs=5V VDD = -24 V, ID = -1.8 A , VGS = 0 to -5 V Qg(5) - 8 12 Gate charge total VDD = -24 V, ID = -1.8 A, VGS = 0 to -10 V Qg - 14 21 nC Gate plateau voltage VDD = -24 V, ID = -1.8 A V(plateau) - 2.8 - V Reverse Diode -1.8 A--ISInverse diode continuous forward current TA = 25 °C -7.2Inverse diode direct current,pulsed TA = 25 °C -ISM - -1.2 V-0.95Inverse diode forward voltage VGS = 0 V, IF = -3.6 A -VSD 150Reverse recovery time VR = -30 V, IF=IS , diF/dt = 100 A/µs trr ns100- 0.3Reverse recovery charge VR = -30 V, IF=lS , diF/dt = 100 A/µs -Qrr µC0.2

Semiconductor Group 04 / 19985 BSP 171 P Preliminary data Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73,

81541 München

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