BSP171P INFINEON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

Features

  • P-Channel
  • Enhancement mode
  • Logic level
  • Avalanche rated
  • dv /dt rated Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A=25 °C1) A T A=70 °C1) Pulsed drain current I D,pulse T A=25 °C Avalanche energy, single pulse E AS I D=-1.9 A, R GS=25 Ω mJ Reverse diode dv /dt dv /dt I D=-1.9 A, V DS=-48 V, di /dt =-200 A/µs, T j,max=150 °C kV/µs Gate source voltage V GS V Power dissipation P tot T A=25 °C1) W Operating and storage temperature T j, T stg °C IEC climatic category; DIN IEC 68-1 55/150/56 -55 ... 150 ±20 -1.9 -1.5 1.8 Value -7.6 steady state V DS -60 V R DS(on),max 0.3 Ω I D -1.9 A Product Summary Type Package Ordering Code Marking BSP 171 P SOT-223 Q67041-S4019 171P SOT-223 Rev. 2.0 page 1 2004-01-20

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - soldering point R thJS - - 25 K/W Thermal resistance, junction - ambient R thJA minimal footprint, steady state - - 110 6 cm2 cooling area1), steady state -- 7 0 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 µA -60 - - V Gate threshold voltage V GS(th) V DS=V GS, Zero gate voltage drain current I DSS V DS=-60 V, V GS=0 V, V DS=-60 V, V GS=0 V, T j=125 °C - -10 -100 Gate-source leakage current I GSS V GS=-20 V, V DS=0 V - -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-4.5 V, V GS=-10 V, Transconductance g fs |V DS|>2|I D|R DS(on)max, 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Values Rev. 2.0 page 2 2004-01-20

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 365 460 pF Output capacitance C oss - 105 135 Reverse transfer capacitance C rss -4 0 5 5 Turn-on delay time t d(on) -68 n s Rise time t r -2 5 3 3 Turn-off delay time t d(off) - 208 276 Fall time t f - 87 130 Gate Charge Characteristics2) Gate to source charge Q gs - -1.2 -1.6 nC Gate to drain charge Q gd -- 5 - 7 Gate charge total Q g - -13 -20 Gate plateau voltage V plateau -- 3- V Output charge Q oss V DD=-15 V, V GS=0 V -- 5 - 7 Reverse Diode Diode continuous forward current I S - - -1.9 A Diode pulse current I S,pulse - - -7.6 Diode forward voltage V SD V GS=0 V, I F=1.9 A, Reverse recovery time t rr - 80 120 ns Reverse recovery charge Q rr - -125 -190 nC 2) See figure 16 for gate charge parameter definition T A=25 °C Values V GS=0 V, V DS=-25 V, f =1 MHz V DD=-25 V, V GS=-10 V, I D=-1.9 A, R G=6 Ω V DD=-48 V, I D=1.9 A, V GS=0 to -10 V V R=-30 V, I F=|I S|, di F/dt =100 A/µs Rev. 2.0 page 3 2004-01-20

1 Power dissipation 2 Drain current

P tot=f(T A) I D=f(T A); |V GS|≥10 V 3 Safe operation area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C1); D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 10 µs 100 µs 1 ms 10 ms 100 ms DC 101 100 10-1 10-2 0.1 1 10 100 -V DS [V] -I D [A] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10210110010-110-210-310-410-5 102 101 100 10-1 t p [s] Z thJS [K/W] 0.5 1.5 0 40 80 120 160 T A [°C] P tot [W] 0.5 1.5 0 40 80 120 160 T A [°C] -I D [A] Rev. 2.0 page 4 2004-01-20

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j -3 V -3.5 V -4 V -4.5 V -5 V -5.5 V -10 V 100 200 300 400 500 600 01234 -I D [A] R DS(on) [mΩ ] 25 °C125 °C 012345 -V GS [V] -I D [A] 01234 -I D [A] g fs [S] -2.5 V -3 V -3.5 V -4 V -4.5 V -5 V -5.5 V -10 V 012345 -V DS [V] -I D [A] Rev. 2.0 page 5 2004-01-20

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-1.9 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-460 µA 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ. 98 % 100 200 300 400 500 -60 -20 20 60 100 140 180 T j [°C] R DS(on) [mΩ ] Ciss Coss Crss 103 102 101 01 0 2 0 3 0 -V DS [V] C [pF] typ. min. max. 0.5 1.5 2.5 -60 -20 20 60 100 140 180 T j [°C] -V GS(th) [V] 25 °C, typ 150 °C, typ 25 °C, 98% 150 °C, 98% 101 100 10-1 10-2 0 0.5 1 1.5 -V SD [V] I F [A] Rev. 2.0 page 6 2004-01-20

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-1.9 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=-1 mA -60 -20 20 60 100 140 180 T j [°C] -V BR(DSS) [V] V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g 25 °C 100 °C 125 °C 0.1 1 10 100 1000 t AV [µs] -I AV [A]

0.2 VBR(DSS)

0.5 VBR(DSS)

0.8 VBR(DSS)

Q gate [nC] V GS [V] Rev. 2.0 page 7 2004-01-20

SOT-223: Outline Footprint Packaging Tape Dimensions in mm Rev. 2.0 page 8 2004-01-20

St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts started herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 9 2004-01-20