BSP171 SIEMENS | Alldatasheet

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Semiconductor Group 1 18/02/1997 BSP 171 SIPMOS ® Small-Signal Transistor

  • P channel
  • Enhancement mode
  • Logic Level
  • Avalanche rated Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID R DS(on) Package Marking BSP 171 -60 V -1.7 A 0.35 Ω SOT-223 BSP 171 Type Ordering Code Tape and Reel Information BSP 171 Q67000-S224 E6327 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TA = 24 °C ID -1.7 A DC drain current, pulsed TA = 25 °C IDpuls -6.8 Avalanche energy, single pulse ID = -1.7 A, VDD = -25 V, R GS = 25 Ω L = 3.23 mH, Tj = 25 °C EAS mJ Gate source voltage VGS ± 20 V Power dissipation TA = 25 °C Ptot 1.8 W

Semiconductor Group 2 18/02/1997 BSP 171 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150°C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) R thJA ≤ 70 K/W Thermal resistance, junction-soldering point 1) R thJS ≤ 10 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = -0.25 mA, Tj = 25 °C V(BR)DSS -60 - - V Gate threshold voltage VGS =VDS, ID = -1 mA VGS(th) -0.8 -1.4 -2 Zero gate voltage drain current VDS = -60 V, VGS = 0 V, Tj = 25 °C VDS = -60 V, VGS = 0 V, Tj = 125 °C IDSS -10 -0.1 -100 µA Gate-source leakage current VGS = -20 V, VDS = 0 V IGSS - -10 -100 nA Drain-Source on-state resistance VGS = -10 V, ID = -1.7 A R DS(on) - 0.22 0.35 Ω

Semiconductor Group 3 18/02/1997 BSP 171 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS ≥ 2 * ID * RDS(on)max, ID = -1.7 A gfs 1 1.55 - S Input capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz C iss - 720 960 pF Output capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz C oss - 290 435 Reverse transfer capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz C rss - 120 180 Turn-on delay time VDD = -30 V, VGS = -10 V, ID = -0.3 A R GS = 50 Ω td(on) - 16 25 ns Rise time VDD = -30 V, VGS = -10 V, ID = -0.3 A R GS = 50 Ω tr - 70 105 Turn-off delay time VDD = -30 V, VGS = -10 V, ID = 0.3 A R GS = 50 Ω td(off) - 230 310 Fall time VDD = -30 V, VGS = -10 V, ID = -0.3 A R GS = 50 Ω tf - 280 375

Semiconductor Group 4 18/02/1997 BSP 171 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TA = 25 °C IS - - -1.7 A Inverse diode direct current,pulsed TA = 25 °C ISM - - -6.8 Inverse diode forward voltage VGS = 0 V, IF = -3.4 A, Tj = 25 °C VSD - -0.9 -1.2 V Reverse recovery time VR = 30 V, IF=lS = 0 , diF/dt = 100 A/µs trr - 300 - ns Reverse recovery charge VR = 30 V, IF=lS = 0 , diF/dt = 100 A/µs Q rr - 0.82 - µC

Semiconductor Group 5 18/02/1997 BSP 171 Power dissipation Ptot = ƒ(TA) 0 20 40 60 80 100 120 °C 160 TA 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 W 2.0 Ptot Drain current ID = ƒ(TA) parameter: VGS ≥ -10 V 0 20 40 60 80 100 120 °C 160 TA 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 A -1.8 ID Safe operating area ID =f(VDS ) parameter : D = 0, TC =25°C Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 K/W ZthJC 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Semiconductor Group 6 18/02/1997 BSP 171 Typ. output characteristics ID = ƒ(VDS ) parameter: tp = 80 µs VDS 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2 A -3.8 ID VGS [V] a a -2.0 b b -2.5 c c -3.0 d d -3.5e e -4.0 f f -4.5 g g -5.0 h h -6.0 i i -7.0 j j -8.0 k k -9.0 lP tot = 2W l -10.0 Typ. drain-source on-resistance R DS (on) = ƒ(ID ) parameter: tp = 80 µs, Tj = 25 °C ID 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Ω 1.1 R DS (on) VGS [V] = a -2.0 VGS [V] = a -2.5 VGS [V] = a a -3.0 b b -3.5 c c -4.0 d d -4.5 e e -5.0 f f -6.0 g g -7.0 h h -8.0 i i -9.0 j j -10.0 Typ. transfer characteristics ID = f(VGS ) parameter: tp = 80 µs VDS ≥ 2 x ID x R DS(on)max V GS 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 A -3.6 ID Typ. forward transconductance gfs = f (ID ) parameter: tp = 80 µs, VDS ≥2 x ID x R DS(on)max ID 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 S 2.2 gfs

7 18/02/1997Semiconductor Group BSP 171 Drain-source on-resistance R DS (on) = ƒ(Tj) parameter: ID = -1.7 A, VGS = -10 V -60 -20 20 60 100 °C 160 Tj 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Ω 0.9 R DS (on) typ 98% Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS , ID = -1 mA 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2 -3.6 -4.0 V -4.6 V GS(th) -60 -20 20 60 100 °C 160 Tj typ 98% Typ. capacitances C = f (VDS ) parameter:VGS =0V, f = 1 MHz 0 -5 -10 -15 -20 -25 -30 V -40 V DS -2 10 -1 10 0 10 1 10 nF C C rss C oss C iss Forward characteristics of reverse diode IF = ƒ(VSD ) parameter: Tj, tp = 80 µs -2 -10 -1 -10 0 -10 1 -10 A IF VSD Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

Semiconductor Group 8 18/02/1997 BSP 171 Avalanche energy EAS = ƒ(Tj) parameter: ID = -1.7 A, VDD = -25 V R GS = 25 Ω , L = 3.23 mH 20 40 60 80 100 120 °C 160 Tj mJ E AS Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 -20 20 60 100 °C 160 Tj -54 -56 -58 -60 -62 -64 -66 -68 V -71 V (BR)DSS Safe operating area ID =f(VDS ) parameter : D = 0.01, TC =25°C