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Semiconductor Group 07 / 19981 BSP 170 P Preliminary data SIPMOSÒ Power Transistor

  • P-Channel
  • Enhancement mode
  • Avalanche rated
  • dv/dt rated Pin 3Pin 2/4Pin 1 G D S Type VDS ID RDS(on) @ VGS Package Ordering Code BSP 170 P 60 V -1.9 A 0.3 Ω VGS = -10 V SOT-223 Q67041-S4018 Maximum Ratings , at Tj = 25°C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA = 25 °C TA = 70 °C ID -1.9 -1.5 A Pulsed drain current TA = 25 °C IDpulse -7.6 Avalanche energy, single pulse ID = -1.9 A, VDD = -25 V, RGS = 25 Ω EAS 70 mJ Avalanche current,periodic limited by Tjmax IAR -1.9 A Avalanche energy,periodic limited by Tj(max) EAR 0.18 mJ Reverse diode d v/dt IS = -1.9 A, VDD ≤ V(BR)DSS, di/dt = 200 A/µs, Tjmax = 150 °C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TA = 25 °C Ptot 1.8 W Operating temperature °CTj -55 ... +150 -55...+150Storage temperature Tstg IEC climatic category; DIN IEC 68-1 55/150/56

Semiconductor Group 07 / 19982 BSP 170 P Preliminary data

Electrical Characteristics

Parameter ValuesSymbol Unit at Tj = 25 °C, unless otherwise specified typ. max.min. Thermal Characteristics - - tbdRthJSThermal resistance, junction -soldering point (Pin 4 ) K/W tbd RthJASMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) Static Characteristics V(BR)DSS 60 - -Drain- source breakdown voltage VGS = 0 V, ID = -0.25 mA V VGS(th) -2.1 -4-3Gate threshold voltage, VGS = VDS ID = -460 µA IDSS -100 µA -0.1 Zero gate voltage drain current VDS = -60 V, VGS = 0 V, Tj = 25 °C VDS = -60 V, VGS = 0 V, Tj = 125 °C IGSS - -10Gate-source leakage current VGS = -20 V, VDS = 0 V nA-100 RDS(on) - 0.175 0.3 ΩDrain-Source on-state resistance VGS = -10 V, ID = -1.9 A 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air.

Semiconductor Group 07 / 19983 BSP 170 P Preliminary data Parameter Symbol UnitValues min. typ. max.at Tj = 25 °C, unless otherwise specified Dynamic Characteristics gfs 1 -2.5Transconductance VDS≥2*ID*RDS(on)max , ID = -1.9 A S Ciss - 420 pF335Input capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz Coss - 105Output capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz 135 Crss - 65 85Reverse transfer capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz nstd(on) 14-Turn-on delay time VDD = -30 V, VGS = -10 V, ID = -1.9 A, RG = 6 Ω Rise time VDD = -30 V, VGS = -10 V, ID = -1.9 A, RG = 6 Ω tr 45- 30 190- 125td(off)Turn-off delay time VDD = -30 V, VGS = -10 V, ID = -1.9 A, RG = 6 Ω Fall time VDD = -30 V, VGS = -10 V, ID = -1.9 A, RG = 6 Ω - 65tf 100

Semiconductor Group 07 / 19984 BSP 170 P Preliminary data Parameter Symbol UnitValues at Tj = 25 °C, unless otherwise specified min. max.typ. Dynamic Characteristics - 0.36 0.54QG(th) nCGate charge at threshold VDD = -48 V, ID≥−0,1 A, VGS = 0 to - 1 V Gate charge at Vgs=7V VDD = -24 V, ID = -1.9 A, VGS = 0 to-7 V - 7.8 11.7 nCQg(7) 1510Gate charge total VDD = -48 V, ID = -1.9 A, VGS = 0 to -10 V -Qg Gate plateau voltage VDD = -48 V, ID = -1.9 A VV(plateau) 3.85 -- Reverse Diode -1.9 A-Inverse diode continuous forward current TA = 25 °C -IS Inverse diode direct current,pulsed TA = 25 °C ISM - -7.6- -1.2-0.85 VVSD -Inverse diode forward voltage VGS = 0 V, IF = -3.8 A 9060 nsReverse recovery time VR = -30 V, IF=IS , diF/dt = 100 A/µs -trr 100QrrReverse recovery charge VR = -30 V, IF=lS , diF/dt = 100 A/µs 150 nC-

Semiconductor Group 07 / 19985 BSP 170 P Preliminary data Power Dissipation Ptot = f(TA) 0 20 40 60 80 100 120 °C 160 TA 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 W 1.8 BSP 170 P Ptot Drain current ID = f (TA) parameter:VGS ≥ -10V 0 20 40 60 80 100 120 °C 160 TA 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 A 2.0 BSP 170 P ID

Semiconductor Group 07 / 19986 BSP 170 P Preliminary data Typ. output characteristics ID = f (VDS) parameter: tp = 80 µs VDS 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 A -4.5 BSP 170 P ID VGS [V] a a -4.0 b b -4.5 c c -5.0 d d -5.5 e e -6.0 f f -6.5 g g -7.0 h h -7.5 i i -8.0 j j -9.0 k k -10.0 l Ptot = 2W l -20.0 Drain-source on-resistance RDS(on) = f (Tj) parameter : ID = -1.9 A, VGS = -10 V -60 -20 20 60 100 °C 160 Tj 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 Ω 0.70 BSP 170 P RDS(on) typ 98%

Semiconductor Group 07 / 19987 BSP 170 P Preliminary data Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS, ID = -460 µA -60 -20 20 60 100 °C 160 150 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2 -3.6 -4.0 V -4.6 BSP 170 P VGS(th) typ 98% Typ. transfer characteristics ID= f ( VGS ) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max VGS A -10 ID Typ. capacitances C = f(VDS) Parameter: VGS=0 V, f=1 MHz 0 5 10 15 20 25 30 V 40 - VDS 1 10 2 10 3 10 pF C Ciss Coss Crss Forward characteristics of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs VSD -2 10 -1 10 0 10 1 10 A BSP 170 P IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

Semiconductor Group 07 / 19988 BSP 170 P Preliminary data Typ. gate charge VGS = f (QGate) parameter: ID puls =-1.9A 0 2 4 6 8 10 nC 14 QGate V BSP 170 P VGS DS maxV0,8 DS maxV0,2 Avalanche Energy EAS = f (Tj) parameter: ID = -1.9 A,VDD = -25 V RGS = 25 Ω 20 40 60 80 100 120 °C 150 Tj mJ EAS Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 160 Tj V BSP 170 P V(BR)DSS

Semiconductor Group 07 / 19989 BSP 170 P Preliminary data Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73,

81541 München

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