BSP170P-L6327 INFINEON | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 9
Technical content
Features
- P-Channel
- Enhancement mode
- Avalanche rated
- dv /dt rated
- Pb-free lead plating; RoHS compliant Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A=25 °C A T A=70 °C Pulsed drain current I D,pulse T A=25 °C Avalanche energy, single pulse E AS I D=1.9 A, R GS=25 Ω mJ Avalanche energy, periodic limited by Tjmax E AR Reverse diode dv /dt dv /dt I D=1.9 A, V DS=48 V, di /dt =-200 A/µs, T j,max=150 °C kV/µs Gate source voltage V GS V Power dissipation P tot T A=25 °C W Operating and storage temperature T j, T stg °C ESD class JESD22-C101 (HBM) Soldering temperature IEC climatic category; DIN IEC 68-1 -1.9 -1.5 1.8 Value -7.6 steady state 0.18 55/150/56 -55 ... 150 ±20 1A (250V to 500V) 260 °C V DS -60 V R DS(on),max 0.3 Ω I D -1.9 A Product Summary PG-SOT223 Type Package Tape and reel information Marking Lead free Packing BSP170P PG-SOT223 H6327: 1000pcs/reel BSP170 P Yes Non Dry Rev 2.53 page 1 2012-11-26
- Qualified according to AEC Q101
- Halogenfree according to IEC61249221
Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction -soldering point R thJS - - 20 K/W SMD version, device on PCB: R thJA minimal footprint - - 110 K/W 6 cm2 cooling area1) -- 7 0 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 µA -60 - - V Gate threshold voltage V GS(th) V DS= V GS, I D=-250 µA -2.1 -3 -4 Zero gate voltage drain current I DSS V DS=-60 V, V GS=0 V, V DS=-60 V, V GS=0 V, T j=125 °C - -10 -100 Gate-source leakage current I GSS V GS=-20 V, V DS=0 V - -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-10 V, I D=-1.9 A - 239 300 m Ω Transconductance g fs | V DS|>2| I D| R DS(on)max, 1) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Values Rev 2.53 page 2 2012-11-26
Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 328 410 pF Output capacitance C oss - 105 135 Reverse transfer capacitance C rss -3 8 4 8 Turn-on delay time t d(on) -1 4 2 1 n s Rise time t r -2 8 4 2 Turn-off delay time t d(off) - 92 138 Fall time t f -6 0 9 0 Gate Charge Characteristics Gate to source charge Q gs - -1.4 -1.9 nC Gate to drain charge Q gd - -4.9 -7.4 Gate charge total Q g - -10 -14 Gate plateau voltage V plateau - -4.34 - V Reverse Diode Diode continuous forward current I S - - -1.98 A Diode pulse current I S,pulse - - -7.6 Diode forward voltage V SD V GS=0 V, I F=-1.9 A, Reverse recovery time t rr -3 6 5 4 n s Reverse recovery charge Q rr -4 1 6 2 n C T A=25 °C Values V GS=0 V, V DS=-25 V, f =1 MHz V DD=-30 V, V GS=- 10 V, I D=-1.9 A, R G=6 Ω V DD=-48 V, I D=-1.9 A, V GS=0 to -10 V V R=30 V, I F=| I S|, d i F/d t =100 A/µs Rev 2.53 page 3 2012-11-26
1 Power dissipation 2 Drain current
P tot=f( T A) I D=f( T A); | V GS| ≥ 10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f( V DS); T A=25 °C1); D =0 Z thJA=f( t p) parameter: t p parameter: D = t p/ T 10 µs 100 µs 1 ms 10 ms 100 ms DC 101 100 10-1 10-2 0.1 1 10 100 -V DS [V] -I D [A] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10210110010-110-210-310-410-5 102 101 100 10-1 t p [s] Z thJS [K/W] 0.3 0.6 0.9 1.2 1.5 1.8 0 40 80 120 160 T A [°C] P tot [W] 0.3 0.6 0.9 1.2 1.5 1.8 2.1 0 40 80 120 160 T A [°C] -I D [A] Rev 2.53 page 4 2012-11-26
5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f( V DS); T j=25 °C R DS(on)=f( I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f( V GS); | V DS|>2| I D| R DS(on)max g fs=f( I D); T j=25 °C parameter: T j -4 V -4.5 V -5 V -5.5 V -6 V -7 V -10 V -20 V 100 200 300 400 500 600 700 800 900 1000 0123 -I D [A] R DS(on) [m Ω ] 25 °C 125 °C 012345 -V GS [V] -I D [A] 0.5 1.5 2.5 3.5 0 0.5 1 1.5 2 2.5 -I D [A] g fs [S] -4V -4.5 V -5 V -5.5 V -6V -7 V -10 V -20 V 012345 -V DS [V] -I D [A] Rev 2.53 page 5 2012-11-26
9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f( T j); I D=-1.9 A; V GS=-10 V V GS(th)=f( T j); V GS= V DS; I D=-250 µA 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f( V DS); V GS=0 V; f =1 MHz I F=f( V SD) parameter: T j typ. 98 % 100 150 200 250 300 350 400 450 500 550 600 -60 -20 20 60 100 140 T j [°C] R DS(on) [m Ω ] Ciss Coss Crss 103 102 101 0 5 10 15 20 25 -V DS [V] C [pF] typ. min. max. -60 -20 20 60 100 140 T j [°C] -V GS(th) [V] 25 °C, typ 150 °C, typ 25 °C, 98% 150 °C, 98% 101 100 10-1 10-2 0 0.5 1 1.5 2 2.5 3 -V SD [V] I F [A] Rev 2.53 page 6 2012-11-26
13 Avalanche characteristics 14 Typ. gate charge I AS=f( t AV); R GS=25 Ω V GS=f( Q gate); I D=-1.9 A pulsed parameter: T j(start) parameter: V DD
15 Drain-source breakdown voltage
V BR(DSS)=f( T j); I D=-250 µA -60 -20 20 60 100 140 T j [°C] -V BR(DSS) [V] 25 °C 100 °C 125 °C 104103102101100 101 100 10-1 t AV [µs] -I AV [A] 12 V 30 V 48 V 0 5 10 15 Q gate [nC] V GS [V] Rev 2.53 page 7 2012-11-26
SOT-223: Outline Footprint Packaging Tape Operating and storage temperature Dimensions in mm Rev 2.53 page 8 2012-11-26
Rev 2.53 page 9 2012-11-26