BSP170P_09 INFINEON | Alldatasheet

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Technical content

Features

  • P-Channel
  • Enhancement mode
  • Avalanche rated
  • dv /dt rated
  • Pb-free lead finishing; RoHS compliant Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A=25 °C A T A=70 °C Pulsed drain current I D,pulse T A=25 °C Avalanche energy, single pulse E AS I D=1.9 A, R GS=25 Ω mJ Avalanche energy, periodic limited by Tjmax E AR Reverse diode dv /dt dv /dt I D=1.9 A, V DS=48 V, di /dt =-200 A/µs, T j,max=150 °C kV/µs Gate source voltage V GS V Power dissipation P tot T A=25 °C W Operating and storage temperature T j, T stg °C ESD class JESD22-A114 (HBM) Soldering temperature IEC climatic category; DIN IEC 68-1 55/150/56 -55 ... 150 ±20 1A (250V to 500V) 260 °C -1.9 -1.5 1.8 Value -7.6 steady state 0.18 V DS -60 V R DS(on),max 0.3 Ω I D -1.9 A Product Summary PG-SOT-223 Type Package Tape and reel information Marking Lead free Packing BSP 170 P PG-SOT-223 L6327: 1000pcs/reel BSP170 Yes Non Dry Rev 2.52 page 1 2009-02-16

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction -soldering point R thJS - - 20 K/W SMD version, device on PCB: R thJA minimal footprint - - 110 K/W 6 cm2 cooling area1) -- 7 0 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 µA -60 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=-250 µA -2.1 -3 -4 Zero gate voltage drain current I DSS V DS=-60 V, V GS=0 V, V DS=-60 V, V GS=0 V, T j=125 °C - -10 -100 Gate-source leakage current I GSS V GS=-20 V, V DS=0 V - -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-10 V, I D=-1.9 A - 239 300 mΩ Transconductance g fs |V DS|>2|I D|R DS(on)max, 1) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Values Rev 2.52 page 2 2009-02-16

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 328 410 pF Output capacitance C oss - 105 135 Reverse transfer capacitance C rss -3 8 4 8 Turn-on delay time t d(on) -1 4 2 1 n s Rise time t r -2 8 4 2 Turn-off delay time t d(off) - 92 138 Fall time t f -6 0 9 0 Gate Charge Characteristics Gate to source charge Q gs - -1.4 -1.9 nC Gate to drain charge Q gd - -4.9 -7.4 Gate charge total Q g - -10 -14 Gate plateau voltage V plateau - -4.34 - V Reverse Diode Diode continuous forward current I S - - -1.98 A Diode pulse current I S,pulse - - -7.6 Diode forward voltage V SD V GS=0 V, I F=-1.9 A, Reverse recovery time t rr -3 6 5 4 n s Reverse recovery charge Q rr -4 1 6 2 n C T A=25 °C Values V GS=0 V, V DS=-25 V, f =1 MHz V DD=-30 V, V GS=- 10 V, I D=-1.9 A, R G=6 Ω V DD=-48 V, I D=-1.9 A, V GS=0 to -10 V V R=30 V, I F=|I S|, di F/dt =100 A/µs Rev 2.52 page 3 2009-02-16

1 Power dissipation 2 Drain current

P tot=f(T A) I D=f(T A); |V GS|≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C1); D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 10 µs 100 µs 1 ms 10 ms 100 ms DC 101 100 10-1 10-2 0.1 1 10 100 -V DS [V] -I D [A] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10210110010-110-210-310-410-5 102 101 100 10-1 t p [s] Z thJS [K/W] 0.3 0.6 0.9 1.2 1.5 1.8 0 40 80 120 160 T A [°C] P tot [W] 0.3 0.6 0.9 1.2 1.5 1.8 2.1 0 40 80 120 160 T A [°C] -I D [A] Rev 2.52 page 4 2009-02-16

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j -4 V -4.5 V -5 V -5.5 V -6 V -7 V -10 V -20 V 100 200 300 400 500 600 700 800 900 1000 0123 -I D [A] R DS(on) [mΩ] 25 °C 125 °C 012345 -V GS [V] -I D [A] 0.5 1.5 2.5 3.5 0 0.5 1 1.5 2 2.5 -I D [A] g fs [S] -4V -4.5 V -5 V -5.5 V -6V -7 V -10 V -20 V 012345 -V DS [V] -I D [A] Rev 2.52 page 5 2009-02-16

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-1.9 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-250 µA 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ. 98 % 100 150 200 250 300 350 400 450 500 550 600 -60 -20 20 60 100 140 T j [°C] R DS(on) [mΩ] Ciss Coss Crss 103 102 101 0 5 10 15 20 25 -V DS [V] C [pF] typ. min. max. -60 -20 20 60 100 140 T j [°C] -V GS(th) [V] 25 °C, typ 150 °C, typ 25 °C, 98% 150 °C, 98% 101 100 10-1 10-2 0 0.5 1 1.5 2 2.5 3 -V SD [V] I F [A] Rev 2.52 page 6 2009-02-16

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-1.9 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage

V BR(DSS)=f(T j); I D=-250 µA -60 -20 20 60 100 140 T j [°C] -V BR(DSS) [V] 25 °C 100 °C 125 °C 104103102101100 101 100 10-1 t AV [µs] -I AV [A] 12 V 30 V 48 V 0 5 10 15 Q gate [nC] V GS [V] Rev 2.52 page 7 2009-02-16

SOT-223: Outline Footprint Packaging Tape Operating and storage temperature Dimensions in mm Rev 2.52 page 8 2009-02-16

81726 München, Germany

© Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.52 page 9 2009-02-16