BSP170P

BSP170P INFINEON | Alldatasheet

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SIPMOS Small-Signal-Transistor Product Summary VDS -60 V RDS(on) 0.3 Ω ID -1.9 A Feature

• P-Channel
• Enhancement mode
• Avalanche rated
• dv/dt rated SOT-223 VPS051631 Gate pin1 Drain pin 2 Source pin 3 Type Package Ordering Code BSP 170 P SOT-223 Q67041-S4018 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA=25°C TA=70°C ID -1.9 -1.5 A Pulsed drain current TA=25°C ID puls -7.6 Avalanche energy, single pulse ID=-1.9 A , VDD=-25V, RGS=25Ω EAS 70 mJ Avalanche energy, periodic limited by Tjmax EAR 0.18 Reverse diode dv/dt IS=-1.9A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C dv/dt -6 kV/µs Gate source voltage VGS ±20 V Power dissipation TA=25°C Ptot 1.8 W Operating and storage temperature Tj , Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56

Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point (Pin 4) RthJS - - 20 K/W SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA 110 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0, ID=-250µA V(BR)DSS -60 - - V Gate threshold voltage, VGS = VDS ID=-250µA VGS(th) -2.1 -3 -4 Zero gate voltage drain current VDS=-60V, VGS=0, Tj=25°C VDS=-60V, VGS=0, Tj=125°C IDSS -0.1 -10 -100 µA Gate-source leakage current VGS=-20V, VDS=0 IGSS - -10 -100 nA Drain-source on-state resistance VGS=-10V, ID=-1.9 RDS(on) - 0.24 0.3 Ω 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS≤2*ID*RDS(on)max , ID=-1.9 1.4 2.8 - S Input capacitance Ciss VGS=0, VDS=-25V, f=1MHz - 328 410 pF Output capacitance Coss - 105 135 Reverse transfer capacitance Crss - 38 48 Turn-on delay time td(on) VDD=-30V, VGS=-10V, ID=-1.9A, RG=6Ω - 14 21 ns Rise time tr - 28 42 Turn-off delay time td(off) - 92 138 Fall time tf - 60 90 Gate Charge Characteristics Gate to source charge Qgs VDD=-48V, ID=-1.9A - -1.4 -2.1 nC Gate to drain charge Qgd - -3.6 -5.4 Gate charge total Qg VDD=-48V, ID=-1.9A, VGS=0 to -10V - -12.5 -16 Gate plateau voltage V(plateau) VDD=-48V, ID=-1.9A - -3.85 - V Reverse Diode Inverse diode continuous forward current IS TA=25°C - - -1.9 A Inverse diode direct current, pulsed ISM - - -7.6 Inverse diode forward voltage VSD VGS=0, IF=-1.9A - -0.85 -1.1 V Reverse recovery time trr VR=-30V, IF=lS, diF/dt=-100A/µs - 36 54 ns Reverse recovery charge Qrr VR=-30V, IF=lS, diF/dt=100A/µs - 41 62 nC

1 Power dissipation

Ptot = f (TA) 0 20 40 60 80 100 120 °C 160 TA 0.2 0.4 0.6 0.8 1.2 1.4 1.6 W 1.9 BSP 170 P Ptot

2 Drain current

ID = f (TA) parameter: |VGS| ≥ 10V 0 20 40 60 80 100 120 °C 160 TA -0.2 -0.4 -0.6 -0.8 -1.2 -1.4 -1.6 A BSP 170 P ID

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TA = 25°C -10 -1 -10 0 -10 1 -10 2 V VDS -2 -10 -1 -10 0 -10 1 -10 A BSP 170 P ID R DS(on) = V DS / I D DC 10 ms 1 ms tp = 340.0µs

4 Transient thermal impedance

ZthJS = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s tp -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 K/W BSP 170 P ZthJS single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs VDS -0.5 -1.5 -2.5 -3.5 A BSP 170 P ID VGS [V] a a -4.0 b b -4.5c c -5.0 d d -5.5 e e -6.0 f f -6.5 g Ptot = 1.8W g -7.0 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS ID 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Ω BSP 170 P RDS(on) VGS [V] = a a -4.0 b b -4.5 c c -5.0 d d -5.5 e e -6.0 f f -6.5 g g -7.0 7 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 0 1 2 3 4 5 6 V 8 - VGS A - ID 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: tp = 80 µs 0 3 6 9 A 15 - ID S gfs

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = -1.9 , VGS = -10 V -60 -20 20 60 100 °C 180 Tj 0.1 0.2 0.3 0.4 0.5 0.6 Ω 0.8 BSP 170 P RDS(on) typ 98%

10 Gate threshold voltage

VGS(th) = f (Tj) parameter: VGS = VDS, ID = -250 µA -60 -20 20 60 100 °C 160 Tj 1.5 2.5 3.5 V 4.5 - VGS(th) typ. 98% 11 Typ. capacitances C = f (VDS) parameter: VGS=0, f=1 MHz 0 5 10 15 20 V 30 - VDS 1 10 2 10 3 10 pF C Ciss Coss Crss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs VSD -2 -10 -1 -10 0 -10 1 -10 A BSP 170 P IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

13 Typ. avalanche energy EAS = f (Tj) par.: ID = -1.9 A , VDD = -25 V, RGS = 25 Ω 25 45 65 85 105 125 °C 165 Tj mJ EAS 14 Typ. gate charge VGS = f (QGate) parameter: ID = -1.9 A pulsed 0 2 4 6 8 10 12 14 16 nC 20 |QGate| -10 -12 V -16 BSP 170 P VGS 0,8 VDS max DS maxV0,2

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj -54 -56 -58 -60 -62 -64 -66 -68 V -72 BSP 170 P V(BR)DSS

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