BSP149

BSP149 INFINEON | Alldatasheet

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Technical content

Features

• N-channel
• Depletion mode
• dv /dt rated Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A=25 °C 0.66 A T A=70 °C 0.53 Pulsed drain current I D,pulse T A=25 °C 2.6 Reverse diode dv /dt dv /dt I D=0.66 A, V DS=160 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS ±20 V ESD sensitivity (HBM) as per MIL-STD 883 Class 1 Power dissipation P tot T A=25 °C 1.8 W Operating and storage temperature T j, T stg -55 ... 150 °C IEC climatic category; DIN IEC 68-1 55/150/56 Value V DS 200 V R DS(on),max 3.5 Ω I DSS,min 0.14 A Product Summary Type Package Ordering Code Tape and Reel Information Marking BSP149 SOT-223 Q67000-S071 E6327: 1000 pcs/reel BSP149 SOT-223 Rev. 1.0 page 1 2003-04-03

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - soldering point (pin 4) R thJS - - 25 K/W SMD version, device on PCB R thJA minimal footprint - - 115 6 cm2 cooling area1) -- 7 0 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=-3 V, I D=250 µA 200 - - V Gate threshold voltage V GS(th) V DS=3 V, I D=400 µA -2.1 -1.4 -1 Drain-source leakage current I D (off) V DS=200 V, V GS=-3 V, T j=25 °C - - 0.1 µA V DS=200 V, V GS=-3 V, T j=125 °C --5 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 10 nA Saturated drain current I DSS V GS=0 V, V DS=10 V 140 - - mA Drain-source on-state resistance R DS(on) V GS=0 V, I D=70 mA - 1.7 3.5 Ω V GS=10 V, I D=660 mA - 1.0 1.8 Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=0.48 A 0.4 0.8 - S Values 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (single layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 2 2003-04-03

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 326 430 pF Output capacitance C oss -4 1 5 5 Reverse transfer capacitance Crss -1 7 2 5 Turn-on delay time t d(on) - 5.1 7.7 ns Rise time t r - 3.4 5.1 Turn-off delay time t d(off) -4 5 6 8 Fall time t f -2 1 3 1 Gate Charge Characteristics Gate to source charge Q gs - 0.74 1.0 nC Gate to drain charge Q gd - 5.6 8.4 Gate charge total Q g -1 1 1 4 Gate plateau voltage V plateau - 0.16 - V Reverse Diode Diode continous forward current I S - - 0.66 A Diode pulse current I S,pulse - - 2.6 Diode forward voltage V SD V GS=-3 V, I F=0.66 A, T j=25 °C - 0.9 1.2 V Reverse recovery time t rr -4 2 6 5 n s Reverse recovery charge Q rr -6 0 9 0 n C V R=100 V, I F=0.5 A, di F/dt =100 A/µs T A=25 °C Values V GS=-3 V, V DS=25 V, f =1 MHz V DD=100 V, V GS=-2…7 V, I D=0.50 A, R G=6 Ω V DD=160 V, I D=0.05 A, V GS=-3 to 5 V Rev. 1.0 page 3 2003-04-03

1 Power dissipation 2 Drain current

P tot=f(T A) I D=f(T A); V GS≥10 V 3 Safe operation area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 10 µs 100 µs 1 ms 10 ms DC 0.001 0.01 0.1 1 10 100 1000 V DS [V] I D [A] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 0.1 100 0 0 0 0 1 10 100 t p [s] Z thJA [K/W] 0.5 1.5 0 40 80 120 160 T A [°C] P tot [W] 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 40 80 120 160 T A [°C] I D [A] 10-4 10-3 10-2 10-1 100 101 102 Rev. 1.0 page 4 2003-04-03

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C -0.2 V -0.1 V 0 V 0.1 V 0.2 V 0.5 V 1 V 10 V 0 0.2 0.4 0.6 0.8 1 I D [A] R DS(on) [Ω ] 0.4 0.8 1.2 1.6 -2 -1 0 1 2 3 V GS [V] I D [A] 0.2 0.4 0.6 0.8 1.2 I D [A] g fs [S] -0.2 V -0.1 V 0 V 0.1 V 0.2 V 0.5 V

1 V10 V

0.2 0.4 0.6 0.8 02468 1 0 V DS [V] I D [A] Rev. 1.0 page 5 2003-04-03

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.07 A; V GS=0 V V GS(th)=f(T j); V DS=3 V; I D=400 µA parameter: I D 11 Typ. Capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=-3 V; f =1 MHz I F=f(V SD) parameter: T j typ 98 % -60 -20 20 60 100 140 180 T j [°C] R DS(on) [Ω ] typ 98 % 2 % -2.5 -1.5 -0.5 -60 -20 20 60 100 140 180 T j [°C] V GS(th) [V] Ciss Coss Crss 100 1000 0 5 10 15 20 25 30 V DS [V] C [pF] 25 °C150 °C 150 °C, 98 % 0.0001 0.001 0.01 0.1 0 0.5 1 1.5 V SD [V] I F [A] Rev. 1.0 page 6 2003-04-03

14 Typ. gate charge 15 Drain-source breakdown voltage V GS=f(Q gate); I D=0.5 A pulsed V BR(DSS)=f(T j); I D=250 µA parameter: V DD 160 180 200 220 240 -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V]

0.2 VDS(max)

0.5 VDS(max)

0.8 VDS(max)

Q gate [nC] V GS [V] Rev. 1.0 page 7 2003-04-03

Package Outline: Footprint: Packaging: Rev. 1.0 page 8 2003-04-03

St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts started herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 9 2003-04-03