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Small-Signal Transistor SOT-223-4 Features 4 + N-channel * Depletion mode + dv/dt rated + Halogen-free according to IEC61249-2-21 > + Pb-free lead plating; ROHS compliant Product validation 3 Fully qualified according to JEDEC for Industrial Applications Table 1 Key Performance Parameters nnn eR [Rosininen 60 sone ESD Sensitivity, Class1A. JESD22-A114 (HBM) | (>250V,<500V) © @ RoHS BSP1351 PG-SOT223 SP1351 [le Final Data Sheet 1 Rev. 2.1, 2021-03-16
Small-Signal Transistor Cinfi neon BSP1351 Table of Contents Package Outlines 2... cee ene e eee eee e eee e eee GD Final Data Sheet 2 Rev. 2.1, 2021-03-16
Small-Signal Transistor Cin Ineon BSP1351
1 Maximum ratings
at Ta=25 °C, unless otherwise specified Table 2__ Maximum ratings Paramet Note / Test Condit arameter ote / Test Condition [min. |Typ._[Max._| . . 0.12 Ta=25 °C Pulsed drain current fiom fF fos [A | Tan25 °C Reverse diode dvidt dvidt | fF fe | kis 20-12 2 Yos=20 V, dildt=200 Alus, jmax= . oy IEC climati t 5 Operating and storage temperature Tite [88 | it50 fo | DIN IEC 68-1, 4150/56
2 Thermal characteristics
Table 3 Thermal characteristics Paramet symbol Note / Test Condit ‘arameter ymbo! [min. | jlote / Test Condition Typ. [Max Thermal resistance, junction - soldering Sa ed: SMD version, device on PCB, SMD version, device on PCB,
3 Electrical characteristics
at Tj=25 °C, unless otherwise specified Table 4 __ Static characteristics Paramet Note / Test Condit arameter ote / Test Condition [Min. |Typ. Max. | Drain-source breakdown voltage [Veross [600 |- |- |v__| Ves=-3 V, Ip=250 UA Gate threshold voltage Vos=3 V, [p=94 pA A 0.1 Vos=600 V, Ves=-3 V, T=25 °C Se Gate-source leakage current a a Ves=20 V, Vos=0 V On-state drain current lioss (20,—s|- = ma Ves=0 V, Vos=10 V A A 30 60 Ves=0 V, Ib>=0.01A Drain-source on-state resistance Irom fla Ves=10 V, Ip=0.12 A *) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm? (single layer, 70 um thick) copper area for Final Data Sheet 3 Rev. 2.1, 2021-03-16
Small-Signal Transistor Cin Ineon BSP1351 Table 5 Dynamic characteristics paramet symbol Note / Test Conditi ‘arameter yymbol [Min. | lote est Condition Typ. |[Max.__ Input capacitance [cs 98+ |p| Vose-3 V, Vos=25 V, 1 MHz Output capacitance Se Se Ves=-3 V, Vos=25 V, 1 MHz Reverse transfer capacitance Ics [eS (84- pF Ves=-3 V, Vos=25 V, 1 MHz er = Table 6 Gate charge characteristics Paramet symbol Note / Test Condit ‘arameter ymbol [Min. | ote est Condition Typ. |Max.__ Gate to source charge la, [es fo.za [- [nc Von=400 V, /p=0.1 A, Ves=-3 to 5 V Gate to drain charge lac |e 20 - | | Voo=400 V, /o=0.1 A, Ves=-3 to 5 V Gate charge total la - —|8.7 |= [nC _ | Vo0=400 V, 100.1 A, Vos=-3 to 5 V Gate plateau voltage [Voaew > [0.20 |- _|V_| Vo=400 V, b=0.1 A, Vos=-3 to 5 V Table 7 Reverse diode Paramet yma [ae Note / Test Conditi ‘arameter lote est Condition ‘win. [Typ. Max. Diode continous forward current ls |- | jorz [a | Ta=25 °C Diode pulse current lIsowe | | —ifoas [A Ta=25 °C Diode forward voltage [veo + fo78 [4.2 |V | Vose-3 V, fr=0.12 A, T=25 °C Reverse recovery time lt [+ =| 87__—*| 430 |ns__| Va=300 V, =0.1 A, die/dt=100 Alys Reverse recovery charge la [fro [toa [nc Va=300 V, Ir=0.1 A, di/dt=100 A/us Final Data Sheet 4 Rev. 2.1, 2021-03-16
Small-Signal Transistor Cin ineon BSP1351
4 Electrical characteristics diagrams
2.0 0.14 | ti] tii LITLE ETT TT TTT ett NCEE |e reppScoee re N 18 \\] oo LE LELAEE EEE SUIN EE) ace IEEE ET TT TIN EEE = TTT TIN TTT =z \\ é” 2 oot TLE EET TINT 0.06 TOTTI | ee CECE \\ 0.04 \\ os C LEEE ETT TT EEE TAT LN Ye ECE CECT) Cece 0 0.00 7 \\ of tL ITT TTT Tyr yy 0 40 80 120 160 0 20 40 60 80 100 120 140 160 Ta [°C] Ta [°C] EEE ett cl aU ane aa Ha ING 8 WAU ee eee = MUU | ALLIS) CUIECTIB Per ecneee TT, SSS RSS le iia || = Z| NY % 10" -ho till < A INT tT a Cy Call e WACO TNT 3 YUM | PTI Tl N Lacs VFA Et « Cu | ee EERE SERS EH 0.0244 ee ee at a at ert ett ANI CA TMT ETT EIT TT crm croc | TTT TTT woo LLL LUI LU} 10° 10° 10? 10° 10% 10° 10? 10° 10° 10° 107 Vos [V] t [s] Final Data Sheet 5 Rev. 2.1, 2021-03-16
Small-Signal Transistor n ineon BSP1351 Diagram 6: Typ. drain-source on resistance 0.25 100 tt Tw YY | |} || text foul [oy | sy] TOOCOZEET)) SCP Ec 0.20 f/f 80 ttt tt SeRteeesie BaEe/4nn LE PE
0.15 Wa _ 60
ie} ce (| Yili EL 2 Uy 1 0.2 V: ry ARE : 0.10 jf 01 & 40 J Ay meet 00s Wr? nit tt TT tov Alli tT ttt ey} LEE ET TT wJlitil ITT ET ty} EET ey ye ey Vos [V1 ofl Ip=f(Vos), Ti=25 °C; parameter: Ves Rosion)=f(/o), T=25 °C; parameter: Ves ie 0.20 a rps p a a oo — fF t+ Fr rr hd A ZO A 0.18 a a ye AY ows i A ZA zg OChrrrrrrr ye is Se) }Bot0 4 a a a i a A A 0.05 ost rrr i 7A 27 A a 2, 000 — ber 0.00 Ves [VI ofl Io=f( Ves), |Vos|>2|/o|Rosionjmax; parameter: T; 91s=f(/0) Final Data Sheet 6 Rev. 2.1, 2021-03-16
Small-Signal Transistor n ineon BSP1351 Diagram 9: Normalized drain-source on resistance Diagram 10: Typ. gate threshold voltage 25 0.0 a EEE EE FECEEEE EEE ER LTT TPT ye os rr CCEA | BEE SS SS A A ee SS a ey ee i a a a STH | BRS Bo oa fe eee eee SB CCA soe RS i LTPP TTP Prey ee oe A a pee = COCCee eco zot tf tf ft ft ft Tt & CECE CECE Ss LA a & ee Ae es ostiirt ttt tr rr err err SS SERRE | 2s DET a a a EET TTT a LETT PPP ree a
09 LLL CCT a9 Ptr
-80 -40 0 40 80 120 160 -60 -20 20 60 100 140 180 TLC] TLC) Roscon)=f(Tj), 1o=0.01 A, Ves=0 V Veswnj=f(Ti), Vos=3 V; lo=94 UA Diagram 11: Typ. capacitances Diagram 12: Forward characteristics of reverse diode 10) YO pp SSccosssSascSseseceseeeee a ee Crrrrrrrrr ere eee [}— — 25°C, max [FP CECE eee ---150°°) FT CO [ew 150°C,maxf | 71 Y | | | tt Sere TET ITTTTT AIA TT Ty ~<a Ni / 3 TANT TAL La ve LLL PASS St iss a ! FREER tt tt ———— Eee eee eed oe oo oe eo oc a & COOPPCIN TTT} je ed ° HH * LEP a Peet TTT ASSET TT TTT FT | got Lt | ed coss| oe a a | FREEEEE EEE RSE EE EFEEFEEEH a oo oe SEEEEEEEEEECEPRR REE Ree | | FRR RRR PSR RSE SSE Tr icrss CETTE TTT Tr TT a LEE tite Te ta PE TT TT AUT). EE 10° 10° i 0 5 10 15 20 25 00 02 04 06 08 10 12 14 16 Vos [V] Vso [V] C=f(Vos); Ves=-3 V; f1 MHz [=f(Vso), Ves=-3 V; parameter: Tj Final Data Sheet 7 Rev. 2.1, 2021-03-16
Small-Signal Transistor Cinfineon BSP1351 10 680 Fag HTT samy] | TT ET PT Ty |) LETT ee LTTE TT TT ttt et yee) Lt tt tt Aa LTT att Tt tA | FETT e L_iT ttt Vert tt 2 UT Bot AA TT Eo AT Pitt yee tt oe Tt | CL ee LAT aft Tt ttt tt ty] LM Ei] | | | | ft tt HTT TTT a -LT Tt tet tt yy ST 0 1 "a Inc} 4 5 -80 -40 0 neCl 80 120 160 te [Ves=(Qoae b=0.1Apused™~<“SsSCSCd : [Veaoss=f(T), b=250HA, Vos=BV 0 S™~<C~SCSCSCSY Ves a Gone Final Data Sheet 8 Rev. 2.1, 2021-03-16
Small-Signal Transistor ¢ Infi neon BSP1351
5 Package Outlines
A a _ At b2 A2 == \\ a i OO “| 1 2| 3 [| c a o | [pensions | —MuLmereRs—_] a [A Teo [80] Poa oto) Paz iso 70] [ob oso Toso | ee XT | Se | a Pop 630 70] Poe 670 730] pen 330 3.70] [oe 230] [et 40 Cin Lo io Figure 1 Outline PG-SOT223, dimensions in mm Final Data Sheet 9 Rev. 2.1, 2021-03-16
—_— I fi Small-Signal Transistor n Ineon BSPI35h
Revision History
Revision: 2021-03-16, Rev. 2.1 Previous Revision Revision [Date __| Subjects (major changes since last revision) 2.0 2021-01-25 |Release of final version 21 2021-03-16 |Update technology naming Trademarks All referenced product or service names and trademarks are the property of their respective owners. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG
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© 2020 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“‘Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's products and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer's technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 10 Rev. 2.1, 2021-03-16