BSP135 SIEMENS | Alldatasheet

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Semiconductor Group 1 09.96 Type Ordering Code Tape and Reel Information Pin Configuration Marking Package 1234 BSP 135 Q62702-S655 E6327: 1000 pcs/reel G D S D BSP 135 SOT-223 BSP 135 Q67000-S283 E6906: 1000 pcs/reel VGS(th) selected in groups: (see page 219) Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 600 V Drain-gate voltage,RGS = 20 kΩ VDGR 600 Gate-source voltage VGS ± 14 Gate-source peak voltage, aperiodic Vgs ± 20 Continuous drain current,TA = 44 ˚C ID 0.100 A Pulsed drain current, TA = 25 ˚C ID puls 0.30 Max. power dissipation,TA = 25 ˚C Ptot 1.7 W Operating and storage temperature range Tj,Tstg – 55 … + 150 ˚C Thermal resistance1) chip-ambient chip-soldering pointRthJS RthJA RthJS K/W DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 55/150/56 1) Transistor on epoxy pcb 40 mm× 40 mm × 1.5 mm with 6 cm2 copper area for drain connection. SIPMOS  Small-Signal Transistor BSP 135

  • VDS 600 V
  • ID 0.100 A
  • RDS(on) 60 Ω
  • N channel
  • Depletion mode
  • High dynamic resistance
  • Available grouped inVGS(th)

Electrical Characteristics

at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS =− 3 V,ID = 0.25 mA V(BR)DSS 600 – – V Gate threshold voltage VDS = 3 V,ID = 1 mA VGS(th) − 1.8 − 1.5 − 0.7 Drain-source cutoff current VDS = 600 V,VGS =− 3 V Tj = 25 ˚C Tj = 125 ˚C IDSS 100 200 nA µA Gate-source leakage current VGS = 20 V,VDS = 0 IGSS – 10 100 nA Drain-source on-resistance VGS = 0 V,ID = 0.01 A RDS(on) –4 0 6 0 Ω Dynamic Characteristics Forward transconductance VDS ≥ 2× ID × RDS(on)max,ID = 0.01 A gfs 0.01 0.04 – S Input capacitance VGS =− 3 V,VDS = 25 V, f= 1 MHz C i iss – 110 150 pF Output capacitance VGS =− 3 V,VDS = 25 V,f = 1 MHz Coss –81 2 Reverse transfer capacitance VGS =− 3 V,VDS = 25 V, f= 1 MHz Crss –35 Turn-on timeton, (ton =td(on) +tr) td(on) –46n s VDD =3 0V ,VGS =− 3 V ... + 5 V,RGS =5 0Ω , ID = 0.2 A tr –1 0 1 5 Turn-off timetoff, (toff= td(off) +tf) td(off) –1 5 2 0 VDD =3 0V ,VGS =− 3 V ... + 5 V,RGS =5 0Ω , ID = 0.2 A tf –2 0 3 0

1) A specific group cannot be ordered separately. Each reel only contains transistors from one group. Electrical Characteristics (cont’d) at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse Diode Continuous reverse drain current TA = 25 ˚C IS – – 0.100 A Pulsed reverse drain current TA = 25 ˚C ISM – – 0.300 Diode forward on-voltage IF = 0.2 A,VGS = 0 VSD – 0.90 1.30 V V GS(th) Grouping Symbol Limit Values Unit Test Condition min. max. Range ofVGS(th) ΔVGS(th) – 0.15 V – Threshold voltage selected in groups1): P R S T U V W VGS(th) – 0.95 – 1.08 – 1.21 – 1.34 – 1.47 – 1.60 – 1.73 – 0.80 – 0.93 – 1.06 – 1.19 – 1.32 – 1.45 – 1.58 V V V V V V V VDS1 = 0.2 V; VDS2 = 3 V; ID = 1 mA SOT-223 Dimensions in mm BSP 135

atTj = 25 ˚C, unless otherwise specified Total power dissipationPtot =f (TA) Typ. output characteristicsID =f (VDS ) parameter:tp = 80µs Safe operating areaID =f(VDS ) parameter:D = 0.01,TC = 25 ˚C Typ. drain-source on-resistance RDS(on) =f (ID ) parameter:VGS BSP 135

Typ. transfer characteristicsID =f(VGS ) parameter:tp = 80µs, VDS ≥ 2× ID × RDS(on)max. Drain-source on-resistance RDS(on) =f( Tj) parameter:ID = 0.01 A,VGS = 0 V, (spread) Typ. forward transconductance gfs= f (ID ) parameter:VDS ≥ 2× ID × RDS(on)max.,tp = 80 µs Typ. capacitancesC =f (VDS ) parameter:VGS = 0,f = 1 MHz BSP 135

Gate threshold voltageVGS(th) =f (Tj) parameter:VDS = 3 V,ID = 1 mA, (spread) Drain currentID =f (TA) parameter:VGS ≥ 3 V Forward characteristics of reverse diode IF =f(VSD ) parameter:tp = 80µs,Tj,(spread) Transient thermal impedanceZthJA =f(tp) parameter:D =tp /T BSP 135

Drain-source breakdown voltage V(BR) DSS =b × V(BR)DSS (25 ˚C) Safe operating areaID =f(VDS ) parameter:D = 0,TC = 25 ˚C