BSO094N03S

BSO094N03S INFINEON | Alldatasheet

Document overview

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• PDF pages: 9

Technical content

Features

• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC
• N-channel
• Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Avalanche rated
• dv /dt rated Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit 10 secs steady state Continuous drain current I D T A=25 °C2) 13 10 A T A=70 °C2) 10 8.3 Pulsed drain current I D,pulse T A=25 °C3) Avalanche energy, single pulse E AS I D=13 A, R GS=25 Ω mJ Reverse diode dv /dt dv /dt I D=13 A, V DS=20 V, di /dt =200 A/µs, T j,max=150 °C kV/µs Gate source voltage V GS V Power dissipation P tot T A=25 °C2) 2.5 1.56 W Operating and storage temperature T j, T stg °C IEC climatic category; DIN IEC 68-1
• Qualified according to JEDEC1 for target applications Value 55/150/56 -55 ... 150 ±20 V DS 30 V R DS(on),max 9.1 mΩ I D 13 A Product Summary Type Package Ordering Code Marking BSO094N03S P-DSO-8 Q67042-S4209 94N3S P-DSO-8 Rev. 1.11 page 1 2004-02-09

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - soldering point R thJS - - 35 K/W Thermal resistance, junction - ambient R thJA minimal footprint, t p≤10 s - - 110 minimal footprint, steady state - - 150 6 cm2 cooling area2), t p≤10 s -- 5 0 6 cm2 cooling area2), steady state -- 8 0 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 30 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=30 µA 1.2 1.6 2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=30 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=11 A - 10.3 12.9 mΩ V GS=10 V, I D=13 A - 7.6 9.1 Gate resistance R G - 1.1 - Ω Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=13 A 19 37 - S 3) See figure 3 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Values 1)J-STD20 and JESD22 Rev. 1.11 page 2 2004-02-09

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 1730 2300 pF Output capacitance C oss - 620 820 Reverse transfer capacitance C rss - 81 120 Turn-on delay time t d(on) - 5.4 8 ns Rise time t r - 4.4 6.6 Turn-off delay time t d(off) -2 2 3 3 Fall time t f - 3.2 4.8 Gate Charge Characteristics4) Gate to source charge Q gs - 4.8 6.4 nC Gate charge at threshold Q g(th) - 2.8 3.7 Gate to drain charge Q gd - 3.3 4.9 Switching charge Q sw - 5.3 7.6 Gate charge total Q g -1 3 1 8 Gate plateau voltage V plateau - 2.8 - V Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 5 V -1 2 1 6 n C Output charge Q oss V DD=15 V, V GS=0 V -1 5 2 0 Reverse Diode Diode continous forward current I S - - 2.5 A Diode pulse current I S,pulse -- 5 2 Diode forward voltage V SD V GS=0 V, I F=2.5 A, T j=25 °C - 0.74 1 V Reverse recovery charge Q rr V R=13 V, I F=I S, di F/dt =400 A/µs - - 10 nC 4) See figure 16 for gate charge parameter definition T A=25 °C Values V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=6.5 A, R G=2.7 Ω V DD=15 V, I D=6.5 A, V GS=0 to 5 V Rev. 1.11 page 3 2004-02-09

1 Power dissipation 2 Drain current

P tot=f(T A); t p≤10 s I D=f(T A); V GS≥10 V; t p≤10 s 3 Safe operation area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C1); D =0 Z thJS=f(t p) parameter: t p parameter: D =t p/T 10 µs 100 µs 1 ms 10 ms 10 s DC 10210110010-1 102 101 100 10-1 10-2 0.01 0.1 100 0.1 1 10 100 V DS [V] I D [A] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10110010-110-210-310-410-5 102 101 100 10-1 10-2 0.01 0.1 100 t p [s] Z thJS [K/W] 0.5 1.5 2.5 0 40 80 120 160 T A [°C] P tot [W] 0 40 80 120 160 T A [°C] I D [A] Rev. 1.11 page 4 2004-02-09

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 3.4 V 3.6 V 3.8 V 4 V 4.2 V 4.5 V 5 V 10 V 01 0 2 0 3 0 I D [A] R DS(on) [mΩ ] 25 °C125 °C 01234 V GS [V] I D [A] 01 0 2 0 3 0 I D [A] g fs [S] 2.6 V 2.8 V 3 V 3.1 V 3.2 V 3.3 V 4.5 V 10 V 0123 V DS [V] I D [A] Rev. 1.11 page 5 2004-02-09

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=13 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ 98 % -60 -20 20 60 100 140 180 T j [°C] R DS(on) [mΩ ] 30 µA 300 µA 0.5 1.5 2.5 -60 -20 20 60 100 140 180 T j [°C] V GS(th) [V] Ciss Coss Crss 104 103 102 101 10 100 1000 10000 01 0 2 0 3 0 V DS [V] C [pF] 25 °C 150 °C 25 °C, 98% 150 °C, 98 % 102 101 100 10-1 0.1 100 V SD [V] I F [A] Rev. 1.11 page 6 2004-02-09

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=6.5 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA 6 V 15 V 24 V 0 5 10 15 20 25 30 Q gate [nC] V GS [V] -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V] V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g 25 °C 100 °C 125 °C 100 1 10 100 1000 t AV [µs] I AV [A] Rev. 1.11 page 7 2004-02-09

P-DSO-8: Outline Footprint Packaging Tape Tube Dimensions in mm Rev. 1.11 page 8 2004-02-09

St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts started herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.11 page 9 2004-02-09