BSM181 SIEMENS | Alldatasheet

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Semiconductor Group 57 03.96 Type Ordering Code BSM 181 C67076-A1001-A2 BSM 181 R C67076-A1016-A2 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 800 V Drain-gate voltage,RGS = 20 kΩ VDGR 800 Gate-source voltage VGS ± 20 Continuous drain current, TC = 25 ˚C ID 36 A Pulsed drain current, TC = 25 ˚C ID puls 144 Operating and storage temperature range Tj,Tstg – 55 … + 150 ˚C Power dissipation, TC = 25 ˚C Ptot 700 W Thermal resistance Chip-case Rth JC ≤ 0.18 K/W Insulation test voltage2), t= 1 min. Vis 2500 V ac Creepage distance, drain-source – 16 mm Clearance, drain-source – 11 DIN humidity category, DIN 40 040 – F – IEC climatic category, DIN IEC 68-1 – 55/150/56 1) See chapter Package Outline and Circuit Diagrams. 2) Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. SIMOPAC ® Module BSM 181 BSM 181 R V DS = 100 V ID = 200 A R DS(on) = 8.5 mΩ

  • Power module
  • Single switch
  • N channel
  • Enhancement mode
  • Package with insulated metal base plate
  • Package outline/Circuit diagram: 1

Electrical Characteristics

at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS = 0,ID = 0.25 mA V(BR)DSS 800 – – V Gate threshold voltage VDS =VGS ,ID = 1 mA VGS(th) 2.1 3.0 4.0 Zero gate voltage drain current VDS = 800 V,VGS = 0 Tj = 25 ˚C Tj = 125 ˚C I DSS 300 250 1000 µA Gate-source leakage current VGS = 20 V,VDS = 0 IGSS – 10 100 nA Drain-source on-state resistance VGS = 10 V,ID = 23 A RDS(on) – 0.18 0.24 Ω Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max.,ID = 23 A gfs 15 25 – S Input capacitance VGS = 0,VDS = 25 V, f= 1 MHz C i iss –2 4 3 2 n F Output capacitance VGS = 0,VDS = 25 V,f = 1 MHz Coss – 1.3 2.0 Reverse transfer capacitance VGS = 0,VDS = 25 V,f = 1 MHz Crss – 0.5 0.8 Turn-on timeton (ton =td (on) +tr) VCC = 400 V,VGS = 10 V ID = 23 A,RGS = 3.3Ω td (on) –6 0 –n s tr –3 0 – Turn-off timetoff (toff =td (off) +tf) VCC = 400 V,VGS = 10 V ID = 23 A,RGS = 3.3Ω td (off) – 370 – tf –7 0 –

Electrical Characteristics (cont’d) at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse diode Continuous reverse drain current TC = 25 ˚C IS ––3 6 A Pulsed reverse drain current TC = 25 ˚C ISM – – 144 Diode forward on-voltage IF = 72 A ,VGS = 0 VSD – 1.1 1.4 V Reverse recovery time IF =IS, diF/dt = 100 A/µs,VR = 100 V Tj = 25 ˚C Tj = 150 ˚C trr 1200 ns Reverse recovery charge IF =IS, diF/dt = 100 A/µs,VR = 100 V Tj = 25 ˚C Tj = 150 ˚C Q rr µC BSM 181 BSM 181 R

Characteristics atTj = 25 ˚C, unless otherwise specified. Power dissipationPtot =f (TC ) parameter:Tj = 150 ˚C Safe operating areaID =f (VDS ) parameter: single pulse,TC = 25 ˚C, Tj≤ 150 ˚C Typ. output characteristicsID =f (VDS ) parameter: tp = 80µs pulse test Typ. transfer characteristicID =f (VGS ) parameter:tp = 80µs ,VDS = 25 V BSM 181 BSM 181 R

ID =f(TC ) parameter:VGS ≥ 10 V,T j = 150 ˚C Drain source on-state resistance RDS(on) = f(Tj) parameter:ID = 36 A;VGS = 10 V, (spread) Drain-source breakdown voltage V (BR)DSS (Tj) =b × V (BR)DSS □(25 ˚C) Typical capacitancesC = f(VDS ) parameter:VGS = 0,f= 1 MHz BSM 181 BSM 181 R

Forward characteristics of reverse diodeIF =f (VSD ) parameter:Tj,tp = 80µs (spread) Transient thermal impedanceZthJC =f (tp) parameter:D =tp/T BSM 181 BSM 181 R

Typ. gate chargeV GS =f(Q Gate) parameter:IDpuls = 52.5 A BSM 181 BSM 181 R