BSM15GD60DN2

BSM15GD60DN2 SIEMENS | Alldatasheet

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Semiconductor Group 1 Jan-09-1997 BSM 15 GD 60 DN2 IGBT Power Module

• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate Type BSM 15 GD 60 DN2 600V 15A ECONOPACK 1 C67076-A2510-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 600 V Collector-gate voltage R GE = 20 kΩ VCGR 600 Gate-emitter voltage VGE ± 20 DC collector current TC = 40 °C IC A Pulsed collector current, tp = 1 ms TC = 40 °C ICpuls Power dissipation per IGBT TC = 25 °C Ptot W Chip temperature Tj + 125 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case R thJC ≤ 2.9 K/W Diode thermal resistance, chip case R thJCD ≤ 3.5 Insulation test voltage, t = 1min. Vis 2500 Vac Creepage distance - 12 mm Clearance - 10 DIN humidity category, DIN 40 040 - F sec IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56

Semiconductor Group 2 Jan-09-1997 BSM 15 GD 60 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Gate threshold voltage VGE = VCE, IC = 0.4 mA VGE(th) 4.5 5.5 6.5 V Collector-emitter saturation voltage VGE = 15 V, IC = 15 A, Tj = 25 °C VGE = 15 V, IC = 15 A, Tj = 125 °C VCE(sat) 2.2 2.1 2.8 2.7 Zero gate voltage collector current VCE = 600 V, VGE = 0 V, Tj = 25 °C ICES - - 1 mA Gate-emitter leakage current VGE = 25 V, VCE = 0 V IGES - - 100 nA AC Characteristics Transconductance VCE = 20 V, IC = 15 A gfs 4.5 - - S Input capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz C iss - 800 - pF Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz C oss - 85 - Reverse transfer capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz C rss - 52 -

Semiconductor Group 3 Jan-09-1997 BSM 15 GD 60 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time VCC = 300 V, VGE = 15 V, IC = 15 A R Gon = 68 Ω td(on) - 35 70 ns Rise time VCC = 300 V, VGE = 15 V, IC = 15 A R Gon = 68 Ω tr - 50 100 Turn-off delay time VCC = 300 V, VGE = -15 V, IC = 15 A R Goff = 68 Ω td(off) - 250 370 Fall time VCC = 300 V, VGE = -15 V, IC = 15 A R Goff = 68 Ω tf nS Free-Wheel Diode Diode forward voltage IF = 15 A, VGE = 0 V, Tj = 25 °C IF = 15 A, VGE = 0 V, Tj = 125 °C VF 1.9 1.6 V Reverse recovery time IF = 15 A, VR = -300 V, VGE = 0 V diF/dt = -150 A/µs, Tj = 125 °C trr - 0.11 - µs Reverse recovery charge IF = 15 A, VR = -300 V, VGE = 0 V diF/dt = -150 A/µs Tj = 25 °C Tj = 125 °C Q rr 0.9 0.4 µC

Semiconductor Group 4 Jan-09-1997 BSM 15 GD 60 DN2 Power dissipation Ptot = ƒ(TC ) parameter: Tj ≤ 150 °C 0 20 40 60 80 100 °C 130 TC W Ptot Safe operating area IC = ƒ(VCE ) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C -2 10 -1 10 0 10 1 10 2 10 A IC 10 0 10 1 10 2 10 3 V VCE DC 10 ms 1 ms 100 µs tp = 24.0µs Collector current IC = ƒ(TC ) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 0 20 40 60 80 100 120 °C 160 TC A IC Transient thermal impedance IGBT Zth JC = ƒ(tp) parameter: D = tp / T -3 10 -2 10 -1 10 0 10 1 10 K/W ZthJC 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Semiconductor Group 5 Jan-09-1997 BSM 15 GD 60 DN2 Typ. output characteristics IC = f (VCE ) parameter: tp = 80 µs, Tj = 25 °C 0 1 2 3 V 5 VCE A IC 17V 15V 13V 11V Typ. output characteristics IC = f (VCE ) parameter: tp = 80 µs, Tj = 125 °C 0 1 2 3 V 5 VCE A IC 17V 15V 13V 11V Typ. transfer characteristics IC = f (VGE ) parameter: tp = 80 µs, VCE = 20 V 0 2 4 6 8 10 V 14 VGE A IC

Semiconductor Group 6 Jan-09-1997 BSM 15 GD 60 DN2 Typ. gate charge VGE = ƒ(Q Gate) parameter: IC puls = 15 A 0 10 20 30 40 50 60 70 nC 90 Q Gate V VGE

300 V100 V

Typ. capacitances C = f (VCE ) parameter: VGE = 0 V, f = 1 MHz 0 5 10 15 20 25 30 V 40 VCE -2 10 -1 10 0 10 1 10 nF C Ciss Crss Coss Reverse biased safe operating area ICpuls = f(VCE ) , Tj = 150°C parameter: VGE = 15 V 0 100 200 300 400 500 600 V 800 VCE 0.0 0.5 1.0 1.5 2.5 ICpuls/IC Short circuit safe operating area ICsc = f(VCE ) , Tj = 150°C parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 50 nH 0 100 200 300 400 500 600 V 800 VCE ICsc/IC

Semiconductor Group 7 Jan-09-1997 BSM 15 GD 60 DN2 Typ. switching time I = f (IC ) , inductive load , Tj = 125°C par.: VCE = 300 V, VGE = ± 15 V, R G = 68 Ω 0 5 10 15 20 25 30 A 40 IC 1 10 2 10 3 10 ns t tdon tr tdoff tf Typ. switching time t = f (RG ) , inductive load , Tj = 125°C par.: VCE = 300 V, VGE = ± 15 V, IC = 15 A 0 20 40 60 80 100 120 140 160 Ω 200 R G 1 10 2 10 3 10 ns t tdon tr tdoff tf Typ. switching losses E = f (IC ) , inductive load , Tj = 125°C par.: VCE = 300 V, VGE = ± 15 V, R G = 68 Ω 0 5 10 15 20 25 30 A 40 IC 0.0 0.5 1.0 1.5 2.0 mWs 3.0 E Eon Eoff Typ. switching losses E = f (RG ) , inductive load , Tj = 125°C par.: VCE = 300V, VGE = ± 15 V, IC = 15 A 0 20 40 60 80 100 120 140 160 Ω 200 R G 0.0 0.5 1.0 1.5 2.0 mWs 3.0 E Eon Eoff

Semiconductor Group 8 Jan-09-1997 BSM 15 GD 60 DN2 Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj VF A IF Tj=25°C=125°CjT Transient thermal impedance Diode Zth JC = ƒ(tp) parameter: D = tp / T -3 10 -2 10 -1 10 0 10 1 10 K/W ZthJC 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Semiconductor Group 9 Jan-09-1997 BSM 15 GD 60 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 60 g