BSM150GB120DN2E3166 SIEMENS | Alldatasheet

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Semiconductor Group 1 Aug-02-1996 BSM150GB120DN2E3166 IGBT Power Module Preliminary data

  • Half-bridge
  • Including fast free-wheeling diodes
  • Enlarged diode area
  • Package with insulated metal base plate Type BSM150GB120DN2E3166 1200V 210A HALF-BRIDGE 2 C67076-A2112-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage R GE = 20 kΩ VCGR 1200 Gate-emitter voltage VGE ± 20 DC collector current TC = 25 °C TC = 80 °C IC 150 210 A Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C ICpuls 300 420 Power dissipation per IGBT TC = 25 °C Ptot 1250 W Chip temperature Tj + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case R thJC ≤ 0.1 K/W Diode thermal resistance, chip case R thJCD ≤ 0.125 Insulation test voltage, t = 1min. Vis 2500 Vac Creepage distance - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F - IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56

Semiconductor Group 2 Aug-02-1996 BSM150GB120DN2E3166 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Gate threshold voltage VGE = VCE, IC = 6 mA VGE(th) 4.5 5.5 6.5 V Collector-emitter saturation voltage VGE = 15 V, IC = 150 A, Tj = 25 °C VGE = 15 V, IC = 150 A, Tj = 125 °C VCE(sat) 3.1 2.5 3.7 Zero gate voltage collector current VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C ICES mA Gate-emitter leakage current VGE = 20 V, VCE = 0 V IGES - - 320 nA AC Characteristics Transconductance VCE = 20 V, IC = 150 A gfs 62 - - S Input capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz C iss - 11 - nF Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz C oss - 1.6 - Reverse transfer capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz C rss - 0.6 -

Semiconductor Group 3 Aug-02-1996 BSM150GB120DN2E3166 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time VCC = 600 V, VGE = 15 V, IC = 150 A R Gon = 5.6 Ω td(on) - 200 400 ns Rise time VCC = 600 V, VGE = 15 V, IC = 150 A R Gon = 5.6 Ω tr - 100 200 Turn-off delay time VCC = 600 V, VGE = -15 V, IC = 150 A R Goff = 5.6 Ω td(off) - 600 800 Fall time VCC = 600 V, VGE = -15 V, IC = 150 A R Goff = 5.6 Ω tf - 70 100 Free-Wheel Diode Diode forward voltage IF = 150 A, VGE = 0 V, Tj = 25 °C IF = 150 A, VGE = 0 V, Tj = 125 °C VF 1.4 1.35 1.8 2.3 V Reverse recovery time IF = 150 A, VR = -600 V, VGE = 0 V diF/dt = -1500 A/µs, Tj = 125 °C trr - 0.5 - µs Reverse recovery charge IF = 150 A, VR = -600 V, VGE = 0 V diF/dt = -1500 A/µs Tj = 25 °C Tj = 125 °C Q rr µC

Semiconductor Group 4 Aug-02-1996 BSM150GB120DN2E3166 Power dissipation Ptot = ƒ(TC ) parameter: Tj ≤ 150 °C 0 20 40 60 80 100 120 °C 160 TC 100 200 300 400 500 600 700 800 900 1000 1100 W 1300 Ptot Safe operating area IC = ƒ(VCE ) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 0 10 1 10 2 10 3 10 A IC 10 0 10 1 10 2 10 3 V VCE DC 10 ms 1 ms 100 µs tp = 18.0µs Collector current IC = ƒ(TC ) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 0 20 40 60 80 100 120 °C 160 TC 100 120 140 160 180 200 A 240 IC Transient thermal impedance IGBT Zth JC = ƒ(tp) parameter: D = tp / T -4 10 -3 10 -2 10 -1 10 0 10 K/W ZthJC 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Semiconductor Group 5 Aug-02-1996 BSM150GB120DN2E3166 Typ. output characteristics IC = f (VCE ) parameter: tp = 80 µs, Tj = 25 °C 0 1 2 3 V 5 VCE 100 120 140 160 180 200 220 240 260 A 300 IC 17V 15V 13V 11V Typ. output characteristics IC = f (VCE ) parameter: tp = 80 µs, Tj = 125 °C 0 1 2 3 V 5 VCE 100 120 140 160 180 200 220 240 260 A 300 IC 17V 15V 13V 11V Typ. transfer characteristics IC = f (VGE ) parameter: tp = 80 µs, VCE = 20 V 0 2 4 6 8 10 V 14 VGE 100 120 140 160 180 200 220 240 260 A 300 IC

Semiconductor Group 6 Aug-02-1996 BSM150GB120DN2E3166 Typ. gate charge VGE = ƒ(Q Gate) parameter: IC puls = 150 A 0 200 400 600 800 nC 1100 Q Gate V VGE

800 V600 V

Typ. capacitances C = f (VCE ) parameter: VGE = 0 V, f = 1 MHz 0 5 10 15 20 25 30 V 40 VCE -1 10 0 10 1 10 2 10 nF C Ciss Coss Crss Reverse biased safe operating area ICpuls = f(VCE ) , Tj = 150°C parameter: VGE = 15 V 0 200 400 600 800 1000 1200 V 1600 VCE 0.0 0.5 1.0 1.5 2.5 ICpuls/IC Short circuit safe operating area ICsc = f(VCE ) , Tj = 150°C parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 20 nH 0 200 400 600 800 1000 1200 V 1600 VCE ICsc/IC

Semiconductor Group 7 Aug-02-1996 BSM150GB120DN2E3166 Typ. switching time I = f (IC ) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, R G = 5.6 Ω 0 50 100 150 200 250 300 A 400 IC 1 10 2 10 3 10 4 10 ns t tdon tr tdoff tf Typ. switching time t = f (RG ) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, IC = 150 A 0 10 20 30 40 Ω 60 R G 1 10 2 10 3 10 4 10 ns t tdon tr tdoff tf Typ. switching losses E = f (IC ) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, R G = 5.6 Ω 0 50 100 150 200 250 300 A 400 IC mWs 120 E Eon Eoff Typ. switching losses E = f (RG ) , inductive load , Tj = 125°C par.: VCE = 600V, VGE = ± 15 V, IC = 150 A 0 10 20 30 40 Ω 60 R G mWs 120 E Eon Eoff

Semiconductor Group 8 Aug-02-1996 BSM150GB120DN2E3166 Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj VF 100 120 140 160 180 200 220 240 260 A 300 IF Tj=25°C=125°CjT Transient thermal impedance Diode Zth JC = ƒ(tp) parameter: D = tp / T -4 10 -3 10 -2 10 -1 10 0 10 K/W ZthJC 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Semiconductor Group 9 Aug-02-1996 BSM150GB120DN2E3166 Circuit Diagram Package Outlines Dimensions in mm Weight: 420 g