BSM150GAL120DN2 SIEMENS | Alldatasheet

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Semiconductor Group 1 Mar-29-1996 BSM 150 GAL 120 DN2 IGBT Power Module

  • Single switch with chopper diode
  • Including fast free-wheeling diodes
  • Package with insulated metal base plate Type BSM 150 GAL 120 DN2 1200V 210A HALF BRIDGE GAL 2 C67076-A2013-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage R GE = 20 kΩ VCGR 1200 Gate-emitter voltage VGE ± 20 DC collector current TC = 25 °C TC = 80 °C IC 150 210 A Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C ICpuls 300 420 Power dissipation per IGBT TC = 25 °C Ptot 1250 W Chip temperature Tj + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case R thJC ≤ 0.1 K/W Diode thermal resistance, chip case R thJCD ≤ 0.25 Diode thermal resistance, chip-case,chopperR THJC DC ≤ 0.18 Insulation test voltage, t = 1min. Vis 2500 Vac Creepage distance - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F - IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56

Semiconductor Group 2 Mar-29-1996 BSM 150 GAL 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Gate threshold voltage VGE = VCE, IC = 6 mA VGE(th) 4.5 5.5 6.5 V Collector-emitter saturation voltage VGE = 15 V, IC = 150 A, Tj = 25 °C VGE = 15 V, IC = 150 A, Tj = 125 °C VCE(sat) 3.1 2.5 3.7 Zero gate voltage collector current VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C ICES 2.8 mA Gate-emitter leakage current VGE = 20 V, VCE = 0 V IGES - - 320 nA AC Characteristics Transconductance VCE = 20 V, IC = 150 A gfs 62 - - S Input capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz C iss - 11 - nF Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz C oss - 1.6 - Reverse transfer capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz C rss - 0.6 -

Semiconductor Group 3 Mar-29-1996 BSM 150 GAL 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time VCC = 600 V, VGE = 15 V, IC = 150 A R Gon = 5.6 Ω td(on) - 200 400 ns Rise time VCC = 600 V, VGE = 15 V, IC = 150 A R Gon = 5.6 Ω tr - 100 200 Turn-off delay time VCC = 600 V, VGE = -15 V, IC = 150 A R Goff = 5.6 Ω td(off) - 600 800 Fall time VCC = 600 V, VGE = -15 V, IC = 150 A R Goff = 5.6 Ω tf - 70 100 Free-Wheel Diode Diode forward voltage IF = 150 A, VGE = 0 V, Tj = 25 °C IF = 150 A, VGE = 0 V, Tj = 125 °C VF 1.8 2.3 2.8 V Reverse recovery time IF = 150 A, VR = -600 V, VGE = 0 V diF/dt = -1500 A/µs, Tj = 125 °C trr - 0.4 - µs Reverse recovery charge IF = 150 A, VR = -600 V, VGE = 0 V diF/dt = -1500 A/µs Tj = 25 °C Tj = 125 °C Q rr µC

Semiconductor Group 4 Mar-29-1996 BSM 150 GAL 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Chopper Diode Chopper diode forward voltage IFC = 200 A, VGE = 0 V, Tj = 25 °C IFC = 200 A, VGE = 0 V, Tj = 125 °C VFC 1.8 2.3 2.8 V Reverse recovery time, chopper IFC = 200 A, VR = -600 V, VGE = 0 V diF/dt = -2000 A/µs, Tj = 125 °C trrC - 0.5 - µs Reverse recovery charge, chopper IFC = 200 A, VR = -600 V, VGE = 0 V diF/dt = -2000 A/µs Tj = 25 °C Tj = 125 °C Q rrC µC

Weight: 420g