BSM121AR SIEMENS | Alldatasheet

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Semiconductor Group 31 03.96 Type Ordering Code BSM 121 AR C67076-S1014-A2 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 200 V Drain-gate voltage,RGS = 20 kΩ VDGR 200 Gate-source voltage VGS ± 20 Continuous drain current, TC = 25 ˚C ID 130 A Pulsed drain current, TC = 25 ˚C ID puls 390 Operating and storage temperature range Tj,Tstg – 55 … + 150 ˚C Power dissipation, TC = 25 ˚C Ptot 700 W Thermal resistance Chip-case Case-heat sink Rth JC Rth CH ≤ 0.18 ≤ 0.05 K/W Insulation test voltage2), t= 1 min. Vis 2500 V ac Creepage distance, drain-source – 16 mm Clearance, drain-source – 11 DIN humidity category, DIN 40 040 – F – IEC climatic category, DIN IEC 68-1 – 55/150/56 1) See chapter Package Outline and Circuit Diagrams. 2) Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. SIMOPAC ® Module BSM 121 AR V DS = 200 V ID = 130 A R DS(on) = 20 mΩ

  • Power module
  • Single switch
  • N channel
  • Enhancement mode
  • Package with insulated metal base plate
  • Package outline/Circuit diagram: 1

Electrical Characteristics

at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS = 0,ID = 0.25 mA V(BR)DSS 200 – – V Gate threshold voltage VGS = VDS ,ID = 1 mA VGS(th) 2.1 3.0 4.0 Zero gate voltage drain current VDS = 200 V,VGS = 0 Tj = 25 ˚C Tj = 125 ˚C I DSS 300 250 1000 µA Gate-source leakage current VGS = 20 V,VDS = 0 IGSS – 10 100 nA Drain-source on-state resistance VGS = 10 V,ID = 80 A RDS(on) –1 8 2 0 m Ω Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max.,ID = 80 A gfs 60 75 – S Input capacitance VGS = 0,VDS = 25 V, f= 1 MHz C i iss –1 0 1 3 n F Output capacitance VGS = 0,VDS = 25 V,f = 1 MHz Coss – 3 4.5 Reverse transfer capacitance VGS = 0,VDS = 25 V,f = 1 MHz Crss – 0.7 1.0 Turn-on timeton (ton =td (on) +tr) VCC = 100 V,VGS = 10 V ID = 80 A,RGS = 3.3Ω td (on) – 120 – ns tr –6 0 – Turn-off timetoff(toff =td (off) +tf) VCC = 100 V,VGS = 10 V ID = 80 A,RGS = 3.3Ω td (off) – 240 – tf –4 0 –

Electrical Characteristics (cont’d) at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse diode Continuous reverse drain current TC = 25 ˚C IS – – 130 A Pulsed reverse drain current TC = 25 ˚C ISM – – 390 Diode forward on-voltage IF = 260 A ,VGS = 0 VSD – 1.05 1.4 V Reverse recovery time IF =IS, diF/dt = 100 A/µs,VR = 100 V trr – 400 – ns Reverse recovery charge IF =IS, diF/dt = 100 A/µs,VR = 100 V Q rr – 4.3 – µC BSM 121 AR

Characteristics atTj = 25 ˚C, unless otherwise specified. Power dissipationPtot =f (TC ) parameter:Tj = 150 ˚C Safe operating areaID =f (VDS ) parameter: single pulse,TC = 25 ˚C Tj≤ 150 ˚C Typ. output characteristicsID =f (VDS ) parameter: = 80µs pulse test Typ. transfer characteristicID =f (VGS ) parameter: = 80µs pulse test,VDS = 25 V BSM 121 AR

Continuous drain-source current ID =f(TC ) parameter:VGS ≥ 10 V,T j = 150 ˚C Drain source on-state resistance RDS(on) = f(Tj) parameter:ID = 80 A;VGS = 10 V (spread) Drain-source breakdown voltage V(BR)DSS (Tj)= b × V(BR)DSS (25 ˚ C) Typical capacitancesC = f(VDS ) parameter:VGS = 0,f= 1 MHz BSM 121 AR

Forward characteristics of reverse diode IF =f (VSD ) parameter:Tj,tp = 80µs (spread) Transient thermal impedanceZthJC =f (tp) parameter:D =tp/T BSM 121 AR

Typ. gate chargeVGS =f(Q gate) parameter:IDpuls = 200 A BSM 121 AR