BSM111AR SIEMENS | Alldatasheet
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Semiconductor Group 24 03.96 Type Ordering Code BSM 111 AR C67076-S1013-A2 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 100 V Drain-gate voltage,RGS = 20 kΩ VDGR 100 Gate-source voltage VGS ± 20 Continuous drain current, TC = 25 ˚C ID 200 A Pulsed drain current, TC = 25 ˚C ID puls 600 Operating and storage temperature range Tj,Tstg – 55 … + 150 ˚C Power dissipation, TC = 25 ˚C Ptot 700 W Thermal resistance Chip-case RthJC ≤ 0.18 K/W Insulation test voltage2), t= 1 min. Vis 2500 V ac Creepage distance, drain-source – 16 mm Clearance, drain-source – 11 DIN humidity category, DIN 40 040 – F – IEC climatic category, DIN IEC 68-1 – 55/150/56 1) See chapter Package Outline and Circuit Diagrams. 2) Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. SIMOPAC ® Module BSM 111 AR V DS = 100 V ID = 200 A R DS(on) = 8.5 mΩ
- Power module
- Single switch
- N channel
- Enhancement mode
- Package with insulated metal base plate
- Package outline/Circuit diagram: 1
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS = 0,ID = 0.25 mA V(BR)DSS 100 – – V Gate threshold voltage VDS =VGS ,ID = 1 mA VGS(th) 2.1 3.0 4.0 Zero gate voltage drain current VDS = 100 V,VGS = 0 Tj = 25 ˚C Tj = 125 ˚C I DSS 300 250 1000 µA Gate-source leakage current VGS = 20 V,VDS = 0 IGS – 10 100 nA Drain-source on-state resistance VGS = 10 V,ID = 130 A RDS(on) – 7 8.5 m Ω Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on) max., ID = 130 A gfs 60 75 – S Input capacitance VGS = 0,VDS = 25 V, f= 1 MHz C i iss –1 0 1 3 n F Output capacitance VGS = 0 ,VDS = 25 V,f = 1 MHz Coss – 5 7.5 Reverse transfer capacitance VGS = 0,VDS = 25 V,f = 1 MHz Crss – 1.8 2.7 Turn-on timeton (ton =td (on) +tr) VCC = 50 V,VGS = 10 V ID = 130 A,RGS = 3.3Ω td (on) – 280 – ns tr – 220 – Turn-off timetoff(toff =td (off) +tf) VCC = 50 V,VGS = 10 V ID = 130 A,RGS = 3.3Ω td (off) – 220 – tf –6 0 –
Electrical Characteristics (cont’d) at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse diode Continuous reverse drain current TC = 25 ˚C IS – – 200 A Pulsed reverse drain current TC = 25 ˚C ISM – – 600 Diode forward on-voltage IF = 400 A ,VGS = 0 VSD – 1.25 1.6 V Reverse recovery time IF =IS, diF/dt = 100 A/µs,VR = 30 V trr – 400 – ns Reverse recovery charge IF =IS, diF/dt= 100 A/µs,VR = 30 V Q rr – 3.5 µC BSM 111 AR
Characteristics atTj = 25 ˚C, unless otherwise specified. Power dissipationPtot =f (TC ) parameter:Tj = 150 ˚C Safe operating areaID =f (VDS ) parameter: single pulse,TC = 25 ˚C Tj≤ 150 ˚C Typ. output characteristicsID =f (VDS ) parameter: = 80µs pulse test Typ. transfer characteristicID =f (VGS ) parameter: = 80µs pulse test,VDS = 25 V BSM 111 AR
Continuous drain-source current ID =f(TC ), parameter:VGS ≥ 10 V,T j = 150 ˚C Drain source on-state resistance RDS(on) = f(Tj) parameter:ID = 130 A;VGS = 10 V (spread) Drain-source breakdown voltage V(BR)DSS (Tj)= b × V(BR)DSS (25 ˚C) Typical capacitancesC = f(VDS ) parameter:VGS = 0,f= 1 MHz BSM 111 AR
Forward characteristics of reverse diode IF =f (VSD ) parameter:Tj,tp = 80µs (spread) BSM 111 AR
Transient thermal impedanceZthJC =f (tp) parameter:D =tp/T Typ. gate chargeVGS =f (QGate) parameter:IDputs = 300 A BSM 111 AR