BSC900N20NS3G

BSC900N20NS3G INFINEON | Alldatasheet

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9 6$ &++&- 2(" 2&$ )" 0(&6R DS(on) product (FOM) 3" +*'*&% " $ $ .0% *- (2. 1) for target application Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C 15.2 A T C=100 °C 10.7 Pulsed drain current2) I D,pulse T C=25 °C 61 Avalanche energy, single pulse E AS I D=7.6 A, R GS=25 # 100 mJ Gate source voltage V GS ±20 V Power dissipation P tot T C=25 °C 62.5 W Operating and storage temperature T j, T stg -55 ... 150 °C IEC climatic category; DIN IEC 68-1 55/150/56 Value 1)J-STD20 and JESD22 2) see figure 3 VDS 200 V RDS(on),max 90 m# ID 15.2 A Product Summary Type Package Marking BSC900N20NS3 G PG-TDSON-8 900N20NS PG-TDSON-8 Rev. 2.1 page 1 2010-09-01

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 2 K/W R thJA 6 cm2 cooling area3) - - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 200 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=30 µA 2 3 4 Zero gate voltage drain current I DSS V DS=160 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=160 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=7.6 A - 77 90 m# Gate resistance R G - 2.2 - # Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=7.6 A 8 16 - S Values 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Thermal resistance, junction - ambient Rev. 2.1 page 2 2010-09-01

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 690 920 pF Output capacitance C oss - 52 69 Reverse transfer capacitance C rss - 5.2 - Turn-on delay time t d(on) - 5 - ns Rise time t r - 4 - Turn-off delay time t d(off) - 10 - Fall time t f - 3 - Gate Charge Characteristics4) Gate to source charge Q gs - 3.1 - nC Gate to drain charge Q gd - 1.3 - Switching charge Q sw - 2.4 - Gate charge total Q g - 9 11.6 Gate plateau voltage V plateau - 4.5 - V Output charge Q oss V DD=100 V, V GS=0 V - 20 26 nC Reverse Diode Diode continous forward current I S - - 15.2 A Diode pulse current I S,pulse - - 61 Diode forward voltage V SD V GS=0 V, I F=15.2 A, T j=25 °C - 1 1.2 V Reverse recovery time t rr - 86 - ns Reverse recovery charge Q rr - 309 - nC 4) See figure 16 for gate charge parameter definition V R=100 V, I F=I S, di F/dt =100 A/µs T C=25 °C Values V GS=0 V, V DS=100 V, f =1 MHz V DD=100 V, V GS=10 V, I D=7.6 A, R G=1.6 # V DD=100 V, I D=7.6 A, V GS=0 to 10 V Rev. 2.1 page 3 2010-09-01

1 Power dissipation 2 Drain current

P tot=f(T C) I D=f(T C); V GS: 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T single pulse 0.01 0.020.05 0.1 0.2 0.5 10-5 10-4 10-3 10-2 10-1 100 10-1 100 101 ZthJC [K/W] tp [s] 0 40 80 120 160 Ptot [W] TC [&C] 0 40 80 120 160 ID [A] TC [&C] 1 µs 10 µs 100 µs 1 ms 10 ms DC 10-1 100 101 102 103 10-1 100 101 102 ID [A] VDS [V] Rev. 2.1 page 4 2010-09-01

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 5 V 5.5 V 6 V 8 V 10 V 120 160 0 4 8 12 16 RDS(on) [m ] ID [A] 25 °C 150 °C 0 2 4 6 8 ID [A] VGS [V] 0 5 10 15 20 25 30 gfs [S] ID [A] 4.5 V 5 V 5.5 V

6 V7 V

ID [A] VDS [V] Rev. 2.1 page 5 2010-09-01

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=7.6 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ 98 % 100 150 200 250 -60 -20 20 60 100 140 180 RDS(on) [m ] Tj [&C] 30 µA 300 µA 0.5 1.5 2.5 3.5 -60 -20 20 60 100 140 180 VGS(th) [V] Tj [&C] Ciss Coss Crss 100 101 102 103 0 40 80 120 160 C [pF] VDS [V] 25 °C 150 °C 25 °C, 98% 150 °C, 98% 0.1 100 0 0.5 1 1.5 2 IF [A] VSD [V] Rev. 2.1 page 6 2010-09-01

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 # V GS=f(Q gate); I D=7.6 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA 40 V 100 V 160 V 0 1 2 3 4 5 6 7 8 9 VGS [V] Qgate [nC] 180 190 200 210 220 230 -60 -20 20 60 100 140 180 VBR(DSS) [V] Tj [&C]

Package Outline:PG-TDSON-8 Rev. 2.1 page 8 2010-09-01

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