BSC500N20NS3G INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • N-channel, normal level
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance R DS(on)
  • Pb-free lead plating; RoHS compliant
  • Qualified according to JEDEC1) for target application
  • Halogen-free according to IEC61249-2-21
  • Ideal for high-frequency switching and synchronous rectification Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C 24 A T C=100 °C 17 Pulsed drain current2) I D,pulse T C=25 °C 97 Avalanche energy, single pulse E AS I D=22 A, R GS=25 W 120 mJ Reverse diode dv /dt dv /dt 50 kV/µs Gate source voltage V GS ±20 V Power dissipation P tot T C=25 °C 96 W Operating and storage temperature T j, T stg -55 ... 150 °C IEC climatic category; DIN IEC 68-1 55/150/56 2) See figure 3 Value 1)J-STD20 and JESD22 VDS 200 V RDS(on),max 50 mW ID 24 A Product Summary Type BSC500N20NS3 Package PG-TDSON-8 Marking 500N20NS Rev. 2.0 page 1 2013-02-21

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 1.3 K/W R thJA minimal footprint - - 75 6 cm2 cooling area3) - - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 200 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=60 µA 2 3 4 Zero gate voltage drain current I DSS V DS=160 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=160 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=22 A - 42 50 mW Gate resistance R G - 1.9 - W Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=22 A 19 37 - S Values Thermal resistance, junction - ambient 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.0 page 2 2013-02-21

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 1190 1580 pF Output capacitance C oss - 90 120 Reverse transfer capacitance C rss - 5 - Turn-on delay time t d(on) - 14 - ns Rise time t r - 5 - Turn-off delay time t d(off) - 28 - Fall time t f - 7 - Gate Charge Characteristics4) Gate to source charge Q gs - 5 - nC Gate to drain charge Q gd - 2 - Switching charge Q sw - 4 - Gate charge total Q g - 15 20 Gate plateau voltage V plateau - 4.4 - V Output charge Q oss V DD=100 V, V GS=0 V - 35 47 nC Reverse Diode Diode continous forward current I S - - 24 A Diode pulse current I S,pulse - - 97 Diode forward voltage V SD V GS=0 V, I F=22 A, T j=25 °C - 0.9 1.2 V Reverse recovery time t rr - 110 - ns Reverse recovery charge Q rr - 399 - nC 4) See figure 16 for gate charge parameter definition V R=100 V, I F=12A , di F/dt =100 A/µs T C=25 °C Values V GS=0 V, V DS=100 V, f =1 MHz V DD=100 V, V GS=10 V, I D=12 A, R G,ext=6 W V DD=100 V, I D=12 A, V GS=0 to 10 V Rev. 2.0 page 3 2013-02-21

1 Power dissipation 2 Drain current

P tot=f(T C) I D=f(T C); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10-5 10-4 10-3 10-2 10-1 100 10-2 10-1 100 ZthJC [K/W] tp [s] 100 0 50 100 150 200 Ptot [W] TC [°C] 0 50 100 150 200 ID [A] TC [°C] 1 µs 10 µs 100 µs 1 ms 10 ms DC 10-1 100 101 102 103 10-1 100 101 102 103 ID [A] VDS [V] Rev. 2.0 page 4 2013-02-21

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 4.5 V 5 V 7 V 10 V 0 10 20 30 40 50 RDS(on) [mW] ID [A] 25 °C 150 °C 0 2 4 6 8 ID [A] VGS [V] 0 25 50 75 gfs [S] ID [A] 4.5 V 5 V 7 V 10 V 0 1 2 3 4 5 ID [A] VDS [V] Rev. 2.0 page 5 2013-02-21

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=22 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ 98% 100 120 140 -60 -20 20 60 100 140 180 RDS(on) [mW] Tj [°C] 60 µA 600 µA 0.5 1.5 2.5 3.5 -60 -20 20 60 100 140 180 VGS(th) [V] Tj [°C] Ciss Coss Crss 101 102 103 104 0 40 80 120 160 C [pF] VDS [V] 25 °C 150 °C 25°C, 98% 150°C, 98% 100 101 102 103 0 0.5 1 1.5 2 IF [A] VSD [V] Rev. 2.0 page 6 2013-02-21

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=12 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA 40 V 100 V 160 V 0 4 8 12 16 VGS [V] Qgate [nC] 180 190 200 210 220 230 -60 -20 20 60 100 140 180 VBR(DSS) [V] Tj [°C] V GS Q gate V gs(th) Qg(th) Qgs Qgd Qsw Qg 25 °C 100 °C 125 °C 100 1 10 100 1000 IAS [A] tAV [µs] Rev. 2.0 page 7 2013-02-21

PG-TDSON-8: Outline Rev. 2.0 page 8 2013-02-21

81726 Munich, Germany

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