BSC360N15NS3G

BSC360N15NS3G INFINEON | Alldatasheet

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Q H3 5<<5>D71D53 81B75HR 9H"[Z#@B? 4E3 D ( & Q T ? @5B1D9>7D5=@5B1DEB5 Q#451<6? B8978 6B5AE5>3 ICG9D3 89>71>4CI>3 8B? >? ECB53 D9693 1D9? > Maximum ratings, 1DT V T E><5CC? D85BG9C5C@53 96954 Parameter Symbol Conditions Unit ? >D9>E? EC4B19>3 EBB5>D I 9 T 8 T ++ 6 T 8 T )E<C544B19>3 EBB5>D*# I 9$\\aX_Q T 8 T )+* F1<1>3 855>5B7IC9>7<5@E<C5 E 6H I 9 R =H " 0( Y@ !1D5C? EB3 5F? <D175+# V =H q*( J )? G5B49CC9@1D9? > P \[\ T 8 T /, K ( @5B1D9>71>4CD? B175D5=@5B1DEB5 T VT _\`S T 3 <9=1D93 3 1D57? BI #' # Value V 9H )-( J R 9H"[Z#$YMd +. Y" I 9 ++ 6 Product Summary Type , ' , ! Package E=%I9HDC%0 Marking +.(C)-CH + 5F @175

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Electrical characteristics, 1DT V T E><5CC? D85BG9C5C@53 96954 Static characteristics B19> C? EB3 52 B51;4? G>F? <D175 V "7G#9HH V =H .I 9 = )-( % % J !1D5D8B5C8? <4F? <D175 V =H"\T# V 9H4V =HI 9 V * + , 05B? 71D5F? <D1754B19>3 EBB5>D I 9HH V 9H .V =H T V T % (&) ) r6 V 9H .V =H T V T % )( )(( !1D5 C? EB3 5<51;1753 EBB5>D I =HH V =H .V 9H . % ) )(( Z6 B19> C? EB3 5? > CD1D5B5C9CD1>3 5 R 9H"[Z# V =H .I 9 % +) +. Y" V =H .I 9 % +) +0 I^MZ_O[ZPaO\MZOQ g R_ gV 9Hg5*gI 9gR 9H"[Z#YMd I 9 )- *1 % H Values *#,55697EB5 -85B=1<B5C9CD1>3 5:E>3 D9? > MYNUQZ\` )#$ ,- 1>4$ , 5F93 5? > ==H ==H ==5@? HI) V =D893 ;3 ? @@5B1B516? B4B19> 9CF5BD93 1<9>CD9<<19B + 5F @175

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics + 5F5BC5DB1>C65B3 1@13 9D1>3 5 C ^__ % , & 1<<D9=5 t R % , % !1D5 81BS5 81B13 D5B9CD93 C-# !1D5D? C? EB3 53 81B75 Q S_ % - % Z8 !1D5D? 4B19>3 81B75 Q SP % * % ,G9D3 89>73 81B75 Q _c % , % !1D5@<1D51EF? <D175 V \\XM\`QMa % -&, % J ( ED@ED3 81B75 Q [__ V 99 .V =H . % *1 +1 Z8 Reverse Diode 9? 453 ? >D9>? EC6? BG1B43 EBB5>D I H % % ++ 6 9? 45@E<C53 EBB5>D I H$\\aX_Q % % )+* 9? 456? BG1B4F? <D175 V H9 V =H .I < T V T % ) )&* J + 5F5BC5B53 ? F5BID9=5 t ^^ % /0 % Z_ + 5F5BC5B53 ? F5BI3 81B75 Q ^^ % *-( % Z8 -#,55697EB5 6? B71D53 81B75@1B1=5D5B4569>9D9? > V G .I < Pi <'Pt V C T 8 T Values V =H .V 9H . f & " J V 99 .V =H I 9 R = V 99 .I 9 V =H + 5F @175

1 Power dissipation 2 Drain current

3 Safe operating area 4 Max. transient thermal impedance I 94R"V 9HT 8 T D 4( Z \`T@84R"t \\# @1B1=5D5Bt \\ @1B1=5D5BD 4t \\'T C9>7<5@E<C5 (&() (&(* (&(- (&) (&* (&- 10010-110-210-310-410-5 101 100 10-1 10-2 t p [s] Z thJC [K/W] 0 50 100 150 200 T C [°C] P tot [W] V C V C V C 10310210110010-1 103 102 101 100 10-1 V DS [V] I D [A] 0 25 50 75 100 125 150 175 T C [°C] ID [A] + 5F @175

5 Typ. output characteristics 6 Typ. drain-source on resistance I 94R"V 9HT V T R 9H"[Z#4R"I 9T V T @1B1=5D5BV =H @1B1=5D5BV =H 7 Typ. transfer characteristics 8 Typ. forward transconductance I 94R"V =HKV 9Hg5*gI 9gR 9H"[Z#YMd g R_4R"I 9T V T @1B1=5D5BT V 0 10 20 30 40 50 I D [A] R DS(on) [m ] T T 0 1 2 3 4 5 6 7 V GS [V] I D [A] 0 10 20 30 40 50 I D [A] g fs [S] 0 1 2 3 4 5 V DS [V] I D [A] + 5F @175

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R 9H"[Z#4R"T VI 9 V =H . V =H"\T#4R"T VV =H4V 9H @1B1=5D5BI 9 11 Typ. capacitances 12 Forward characteristics of reverse diode C 4R"V 9HV =H @1B1=5D5BT V \e\\ -60 -20 20 60 100 140 T j [°C] R DS(on) [m ] V V 0.5 1.5 2.5 3.5 -60 -20 20 60 100 140 180 T j [°C] V GS(th) [V] 8U__ 8[__ 8^__ 101 102 103 104 0 20 40 60 80 100 120 V DS [V] C [pF] T T T =1H T =1H 103 102 101 100 0 0.5 1 1.5 2 V SD [V] I F [A] + 5F @175

13 Avalanche characteristics 14 Typ. gate charge I 6H4R"t 6JR =H " V =H4R"Q SM\`QI 9 @E<C54

15 Drain-source breakdown voltage 16 Gate charge waveforms

V 7G"9HH#4R"T VI 9 0 5 10 15 Q gate [nC] V GS [V] 130 140 150 160 170 -60 -20 20 60 100 140 T j [°C] V BR(DSS) [V] V =H Q gate V S _"\T# Q S"\T# Q S_ Q SP Q _c Q g T T T 100 1 10 100 1000 t AV [µs] I AS [A] + 5F @175

+ 5F @175

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