BS870 GE | Alldatasheet
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Technical content
FEATURES
DMOS Transistors (N-Channel) Dimensions in inches and (millimeters) .016 (0.4) .056 (1.43) max. .004 (0.1) .122 (3.1) T op View .102 (2.6) .007 (0.175) .045 (1.15) .118 (3.0) .052 (1.33) .005 (0.125) .094 (2.4) .037 (0.95) Case: SOT -23 Plastic Package Weight: approx. 0.008 g MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Pin configuration 1 = Gate, 2 = Source, 3 = Drain SOT-23 BS870 Inverse Diode Symbol Value Unit Drain-Source Voltage V DSS 60 V Drain-Gate Voltage V DGS 60 V Gate-Source Voltage (pulsed) V GS ± 20 V Drain Current (continuous) I D 250 mA Power Dissipation at TSB = 50 °C P tot 0.3101) W Junction Temperature T j 150 °C Storage T emperature Range T S –65 to +150 °C 1) Device on fiberglass substrate, see layout Symbol Value Unit Max. Forward Current (continuous) at Tamb = 25 °C IF 0.3 A Forward Voltage Drop (typ.) at VGS = 0, IF = 0.3 A, Tj = 25 °C VF 0.85 V ♦ High input impedance ♦ High-speed switching ♦ No minority carrier storage time ♦ CMOS logic compatible input ♦ No thermal runaway ♦ No secondary breakdown Marking S70
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified BS870 Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage at ID = 100 µA, VGS = 0 V(BR)DSS 60 80 – V Gate Threshold Voltage at VGS = VDS , ID = 1 mA VGS(th) 1.0 2 3.0 V Gate-Body Leakage Current at VGS = 15 V , VDS = 0 IGSS ––1 0 nA Drain Cutoff Current at VDS = 25 V , VGS = 0 IDSS ––0 . 5 µA Drain-Source ON Resistance at VGS = 10 V , ID = 200 mA R DS(ON) –3 . 5 5 . 0 Ω Thermal Resistance Junction to Substrate Backside R thSB ––3 2 0 1) K/W Thermal Resistance Junction to Ambient Air RthJA ––4 5 0 1) K/W Forward T ransconductance at VDS = 10 V , ID = 200 mA, f = 1 MHz gm – 200 – mS Input Capacitance at VDS = 10 V , VGS = 0, f = 1 MHz C iss –3 0 –p F Switching Times at VGS = 10 V , VDS = 10 V , RD = 100 Ω Tur n-On T ime Tur n-Of f T ime ton toff ns ns 1) Device on fiberglass substrate, see layout .59 (15) 0.2 (5) .03 (0.8) .30 (7.5) .12 (3) .04 (1) .06 (1.5) .20 (5.1) .08 (2) .08 (2) .04 (1) Dimensions in inches (millimeters) .47 (12) Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm)
versus gate threshold voltage mA VGS(TO) 5 V BS870 10-1 103 102 10-2 10-3 1 234 IDS V = VDS GS T = 25 °CA RATINGS AND CHARACTERISTIC CURVES BS870
RATINGS AND CHARACTERISTIC CURVES BS870
RATINGS AND CHARACTERISTIC CURVES BS870