BS850 GE | Alldatasheet
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Technical content
FEATURES
DMOS Transistors (P-Channel) Dimensions in inches and (millimeters) .016 (0.4) .056 (1.43) max. .004 (0.1) .122 (3.1) T op View .102 (2.6) .007 (0.175) .045 (1.15) .118 (3.0) .052 (1.33) .005 (0.125) .094 (2.4) .037 (0.95) Case: SOT -23 Plastic Package Weight: approx. 0.008 g MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Pin configuration 1 = Gate, 2 = Source, 3 = Drain SOT -23 BS850 Inverse Diode Symbol Value Unit Drain-Source Voltage –V DSS 60 V Drain-Gate Voltage –V DGS 60 V Gate-Source Voltage (pulsed) V GS ± 20 V Drain Current (continuous) –I D 250 mA Power Dissipation at TSB = 50 °C P tot 0.3101) W Junction Temperature T j 150 °C Storage T emperature Range T S –65 to +150 °C 1) Device on fiberglass substrate, see layout Symbol Value Unit Max. Forward Current (continuous) at Tamb = 25 °C IF 0.3 A Forward Voltage Drop (typ.) at VGS = 0, IF = 0.12 A, Tj = 25 °C VF 0.85 V Marking S50 ♦ High input impedance ♦ High-speed switching ♦ No minority carrier storage time ♦ CMOS logic compatible input ♦ No thermal runaway ♦ No secondary breakdown
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified BS850 Symbol Min. T yp. Max. Unit Drain-Source Breakdown Voltage at –ID = 100 µA, VGS = 0 –V(BR)DSS 60 90 – V Gate Threshold Voltage at VGS = VDS , –ID = 1 mA VGS(th) 1.0 2 3.0 V Gate-Body Leakage Current at –VGS = 15 V , VDS = 0 –IGSS ––1 0 n A Drain Cutoff Current at –VDS = 25 V , VGS = 0 –I DSS ––0 . 5 µA Drain-Source ON Resistance at –VGS = 10 V , –ID = 200 mA R DS(ON) –3 . 5 5 . 0 Ω Thermal Resistance Junction to Substrate Backside R thSB – – 320 1) K/W Thermal Resistance Junction to Ambient Air RthJA – – 450 1) K/W Forward Transconductance at –VDS = 10 V , –ID = 200 mA, f = 1 MHz gm – 200 – mS Input Capacitance at –VDS = 10 V , VGS = 0, f = 1 MHz C iss –6 0 –p F Switching Times at –VGS = 10 V , –VDS = 10 V , RD = 100 Ω Tu r n - O n T i m e T urn-Off Time ton toff ns ns 1) Device on fiberglass substrate, see layout .59 (15) 0.2 (5) .03 (0.8) .30 (7.5) .12 (3) .04 (1) .06 (1.5) .20 (5.1) .08 (2) .08 (2) .04 (1) Dimensions in inches (millimeters) .47 (12) Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm)
RATINGS AND CHARACTERISTIC CURVES BS850
RATINGS AND CHARACTERISTIC CURVES BS850
RATINGS AND CHARACTERISTIC CURVES BS850