BS828 GE | Alldatasheet
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FEATURES
DMOS Transistors (N-Channel) Dimensions in inches and (millimeters) .016 (0.4) .056 (1.43) max. .004 (0.1) .122 (3.1) T op View .102 (2.6) .007 (0.175) .045 (1.15) .118 (3.0) .052 (1.33) .005 (0.125) .094 (2.4) .037 (0.95) Case: SOT -23 Plastic Package Weight: approx. 0.008 g MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Pin configuration 1 = Gate, 2 = Source, 3 = Drain SOT-23 Marking S28 Inverse Diode Symbol Value Unit Drain-Source Voltage V DSS 240 V Drain-Gate Voltage V DGS 240 V Gate-Source Voltage (pulsed) V GS ± 20 V Drain Current (continuous) I D 230 mA Power Dissipation at TSB = 50 °C P tot 0.3101) W Junction Temperature T j 150 °C Storage T emperature Range T S –65 to +150 °C 1) Device on fiberglass substrate, see layout Symbol Value Unit Max. Forward Current (continuous) at Tamb = 25 °C IF 0.3 A Forward Voltage Drop (typ.) at VGS = 0, IF = 0.3 A, Tj = 25 °C VF 0.85 V ♦ High breakdown voltage ♦ High input impedance ♦ High-speed switching ♦ No minority carrier storage time ♦ CMOS logic compatible input ♦ No thermal runaway ♦ No secondary breakdown ♦ Specially suited for telephone subsets BS828
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified BS828 Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage at ID = 100 µA, VGS = 0 V(BR)DSS 240 250 – V Gate-Body Leakage Current at VGS = 15 V , VDS = 0 IGSS ––1 0 n A Drain Cutoff Current at VDS = 130 V , VGS = 0 at VDS = 70 V , VGS = 0.2 V IDSS IDSX µA µA Gate-Source Threshold Voltage at VGS = VDS , ID = 1 mA VGS(th) –1 . 5 2 . 5 V Drain-Source ON Resistance at VGS = 2.8 V , ID = 100 mA R DS(ON) –5 . 5 8 Ω Thermal Resistance Junction to Substrate Backside R thSB – – 320 1) K/W Thermal Resistance Junction to Ambient Air RthJA – – 450 1) K/W Capacitances at VDS = 20 V , VGS = 0, f = 1 MHz Input Capacitance Output Capacitance Feedback Capacitance C iss C oss C rss pF pF pF Switching Times at VGS = 10 V , VDS = 10 V , RD = 100 Ω Turn-On Time Turn-Off Time ton toff ns ns 1) Device on fiberglass substrate, see layout .59 (15) 0.2 (5) .03 (0.8) .30 (7.5) .12 (3) .04 (1) .06 (1.5) .20 (5.1) .08 (2) .08 (2) .04 (1) Dimensions in inches (millimeters) .47 (12) Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm)
RATINGS AND CHARACTERISTIC CURVES BS828
RATINGS AND CHARACTERISTIC CURVES BS828
RATINGS AND CHARACTERISTIC CURVES BS828