BS809 GE | Alldatasheet
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FEATURES
DMOS Transistors (N-Channel) Dimensions in inches and (millimeters) .016 (0.4) .056 (1.43) max. .004 (0.1) .122 (3.1) T op View .102 (2.6) .007 (0.175) .045 (1.15) .118 (3.0) .052 (1.33) .005 (0.125) .094 (2.4) .037 (0.95) Case: SOT -23 Plastic Package Weight: approx. 0.008 g MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Pin configuration 1 = Gate, 2 = Source, 3 = Drain SOT-23 BS809 Marking S09 Symbol Value Unit Drain-Source Voltage V DSS 400 V Drain-Gate Voltage V DGS 400 V Gate-Source Voltage (pulsed) V GS ±20 V Drain Current (continuous) at TSB = 50 °C I D 100 mA Power Dissipation at TSB = 50 °C P tot 3101) mW Junction T emperature T j 150 °C Storage T emperature Range T S –65 to +150 °C 1) Device on fiberglass substrate, see layout Inverse Diode Symbol Value Unit Max. Forward Current (continuous) at Tamb = 25 °C I F 300 mA Forward Voltage Drop (typ.)at VGS = 0, IF = 0.3 A, Tj = 25 °C V F 1.0 V ♦ High input impedance ♦ Low gate threshold voltage ♦ Low drain-source ON resistance ♦ High-speed switching ♦ No minority carrier storage time ♦ CMOS logic compatible input ♦ No thermal runaway ♦ No secondary breakdown
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified BS809 Symbol Min. T yp. Max. Unit Drain-Source Breakdown Voltage at ID = 100 µA, VGS = 0 V V(BR)DSS 400 430 – V Gate-Body Leakage Current, Forward at VGSF = 20 V , VDS = 0 V IGSSF – – 100 nA Gate-Body Leakage Current, Reverse at VGSR = 20 V , VDS = 0 V IGSSR – – 100 nA Drain Cutoff Current at VDS = 400 V , VGS = 0 V IDSS – – 500 nA Gate-Source Threshold Voltage at VGS = VDS , ID = 250 µA VGS(th) 11 . 5 2 . 5 V Drain-Source ON Resistance at VGS = 5 V , ID = 100 mA R DS(on) –1 8 2 2 Ω Capacitances at VDS = 25 V , VGS = 0 V , f = 1 MHz Input Capacitance Output Capacitance Feedback Capacitance C iSS C OSS C rS pF pF pF Switching Times at VGS = 10 V , VDS = 10 V , RD = 100 Ω Tu r n - O n T i m e T urn-Off Time ton toff ns ns Thermal Resistance Junction to Substrate Backside R thSB 3201) Thermal Resistance Junction to Ambient Air RthJA – – 450 1) K/W 1) Device on fiberglass substrate, see layout Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) .59 (15) 0.2 (5) .03 (0.8) .30 (7.5) .12 (3) .04 (1) .06 (1.5) .20 (5.1) .08 (2) .08 (2) .04 (1) Dimensions in inches (millimeters) .47 (12)