BS223 GE | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
FEATURES
Case: TO-92 Plastic Package Weight: approx. 0.18 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS DMOS Transistors (P-Channel) G SD .181 (4.6) .142 (3.6) Dimensions in inches and (millimeters) TO-92 Ratings at 25 °C ambient temperature unless otherwise specified .098 (2.5) max. ∅ .022 (0.55) BS223 Symbol Value Unit Drain-Source Voltage –V DSS 60 V Drain-Gate Voltage –V DGS 60 V Gate-Source Voltage (pulsed) V GS ±20 V Drain Current (continuous) at Tamb = 25 °C –I D 1A Power Dissipation at Tamb = 25 °C P tot 8301) mW Junction Temperature T j 150 °C Storage T emperature Range T S –65 to +150 °C 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. Inverse Diode Symbol Value Unit Max. Forward Current (continuous) at Tamb = 25 °C IF 1A Forward Voltage Drop (typ.) at VGS = 0 V , IF = 1 mA, Tj = 25 °C VF 1.0 V ♦ High input impedance ♦ Low gate threshold voltage ♦ Low drain-source ON resistance ♦ High-speed switching ♦ No minority carrier storage time ♦ CMOS logic compatible input ♦ No thermal runaway ♦ No secondary breakdown
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified BS223 Symbol Min. T yp. Max. Unit Drain-Source Breakdown Voltage at –ID = 100 µA, VGS = 0 V –V(BR)DSS 60 70 – V Gate-Body Leakage Current, Forward at –VGSF = 20 V , VDS = 0 V –IGSSF – – 500 nA Gate-Body Leakage Current, Reverse at –VGSR = 20 V , VDS = 0 V –IGSSR – – 500 nA Drain Cutoff Current at –VDS = 60 V , VGS = 0 V –IDSS – – 250 µA Gate-Source Threshold Voltage at VGS = VDS , –ID = 250 µA –VGS(th) 11 . 5 3V Drain-Source ON Resistance at –VGS = 10 V , –ID = 600 mA R DS(on) –0 . 7 0 . 8 Ω Capacitance at –VDS = 25 V , VGS = 0 V , f = 1 MHz Input Capacitance Output Capacitance Feedback Capacitance C iSS C OSS C rSS 350 150 pF pF pF Switching Times at –VGS = 10 V , –VDS = 10 V , RD = 100 Ω Tu r n - O n T i m e T urn-Off Time ton toff 100 ns ns Thermal Resistance Junction to Ambient Air RthJA – – 150 1) K/W 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.