BMS3004

BMS3004 SANYO | Alldatasheet

Document overview

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Technical content

Features

• ON-resistance R DS(on)1=6.5mΩ (typ.)
• Input capacitance Ciss=13400pF (typ.)
• 4V drive Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -75 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D - -68 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% - -272 A Allowable Power Dissipation P D 2.0 W Tc=25°C4 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 380 mJ Avalanche Current *2 I AV - -54 A Note : *1 VDD=- -48V , L=100μH, IAV=- -54A (Fig.1) *2 L≤100μH, Single pulse Package Dimensions unit : mm (typ) 7525-002 10511QA TKIM TC-00002547 SANYO Semiconductors DATA SHEET BMS3004 P-Channel Silicon MOSFET General-Purpose Switching Device

Applications

http://semicon.sanyo.com/en/network Product & Package Information

• Package : TO-220ML(LS)
• JEITA, JEDEC : SC-67, SOT-186A
• Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine Marking Electrical Connection 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML(LS) 0.75 0.7 123 10.0 3.5 7.2 16.014.0 3.6 1.2 1.6 2.552.55 4.5 2.8 2.4 3.2 MS3004 LOT No.

No. A1908-2/5 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=--1mA, VGS=0V - -75 V Zero-Gate Voltage Drain Current I DSS V DS=- -75V, VGS=0V - -10 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=--10V, ID=--1mA - -1.2 - -2.6 V Forward Transfer Admittance | yfs | VDS=--10V, ID=- -34A 120 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=- -34A, VGS=--10V 6.5 8.5 mΩ RDS(on)2 I D=- -34A, VGS=--4V 8.3 11.4 mΩ Input Capacitance Ciss VDS=- -20V, f=1MHz 13400 pF Output Capacitance Coss 1000 pF Reverse Transfer Capacitance Crss 740 pF Turn-ON Delay Time td(on) See Fig.2 70 ns Rise Time tr 245 ns Turn-OFF Delay Time td(off) 1400 ns Fall Time tf 650 ns Total Gate Charge Qg VDS=- -48V, VGS=- -10V, ID=- -68A 300 nC Gate-to-Source Charge Qgs 30 nC Gate-to-Drain “Miller” Charge Qgd 70 nC Diode Forward Voltage VSD IS=- -68A, VGS=0V - -0.9 - -1.5 V Reverse Recovery Time trr See Fig.3 IS=- -68A, VGS=0V, di/dt=- -100A/μs 146 ns Reverse Recovery Charge Qrr 470 nC Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit Fig.3 Reverse Recovery Time Test Circuit 50Ω0V --10V ≥50Ω RG VDD L BMS3004 G S D PW=10μs D.C.≤1% P. G 50Ω G S D ID= --34A RL=1.4Ω VDD= --48V VOUT VIN --10V VIN BMS3004 VDD BMS3004 L Driver MOSFET G S D

No. A1908-3/5 Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A Diode Forward V oltage, VSD -- V Source Current, IS -- A Gate-to-Source V oltage, VGS -- V ID -- VDS ID -- VGS RDS(on) -- TcRDS(on) -- VGS IS -- VSD| yfs | -- ID Forward Transfer Admittance, | yfs | -- S Drain Current, ID -- A Switching Time, SW Time -- ns SW Time -- ID Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- VDS IT16255 IT16252 --50 --25 150 100 1000 IT16259 IT16257IT16256 --0.1 --1.023 5 7 100 1000 --0.01 --0.1 --1.0 --10 --100 --1000 1.0 10000 100000 2 --1035 7 --1005723 0 25 50 75 100 125 Tc= --25 --25 °CTc=75 ID= --34A Single pulse Single pulse Tc=75°C 25°C --25°C Tc= --25 25°C 75°C VDS= --10V Tc=75 --25 Ciss Crss IT16258 100 1000 10000 td(off) VDD= --48V VGS= --10V tr --20 --40 --140 --120 --100 --80 --60 --20 --40 --140 --120 --100 --80 --60 IT16254 IT16253 Tc=25°C --4V VGS= --3V --10V VDS= --10V tf VGS= --4V , ID= --34A VGS= --10V , I D= --34A --8V Coss td(on) --6V f=1MHz VGS=0V Single pulse

No. A1908-4/5 Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V VGS -- Qg EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W PD -- Tc A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Ambient Temperature, Ta -- °C Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W IT16250 20 40 60 80 100 120 140 100 120 160 IT16251 20 40 60 80 100 140 120 160 IT16249 20 40 60 80 100 140 120 2.5 2.0 1.0 0.5 1.5 160 IT16261 0 50 200 150 250100 300 --2 --4 --6 --1 --3 --5 --8 --7 --9 --10 --0.1 --1.0 --10 --0.1 IDP= --272A (PW≤10μs) ID= --68A 100μs1ms 10ms100msDC operation Operation in this area is limited by RDS(on). --1.023 5 7 2 --10 --10035 7 2 35 7 10μs --100 --1000 IT16260 VDS= --48V ID= --68A Tc=25°C Single pulse

No. A1908-5/5PS This catalog provides information as of January, 2011. Specifi cations and information herein are subject to change without notice. Note on usage : Since the BMS3004 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.