BM4953 BOOKLY | Alldatasheet
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Dual P Channel Enhancement Mode MOSFET - 5.0A STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.bookly.com Copyright © 2007, Stanson Corp. STP4953 2007. V1
DESCRIPTION
BM4953 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backlight, notebook computer power management, LCD-TV , LCD- Monitor and other battery powered circuits. PIN CONFIGURATION SOP-8 PART MARKING SOP-8 ± Process Code : A ~ Z ; a ~ z ± STP4953S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free ± STP4953S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free FEATURE z -30V/-5.0A, R DS(ON) = 65mΩ @VGS =-10V z -30V/-4.4A, RDS(ON) = 85mΩ @VGS = -6.0V z -30V/-3.8A, RDS(ON) = 95mΩ @VGS = -4.5V z Super high density cell design for extremely low R DS(ON) z Exceptional on-resistance and maximum DC current capability z SOP-8 package design
Dual P Channel Enhancement Mode MOSFET -5.0A STANSON TECHNOLOGY www.bookly.com Copyright © 2007, Stanson Corp. STP4953 2007. V2 ABSOULTE MAXIMUM RATINGS (Ta = 25Ċ Unless otherw ise note d ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS Ô20 V Continuous Drain Current (TJ=150Ċ) T A=25Ċ TA=70Ċ ID -5.0 -4.0 A Pulsed Drain Current IDM -30 A Continuous Source Current (Diode Conduction) I S -2.3 A Power Dissipation TA=25Ċ TA=70Ċ PD 2.7 1.8 W Operation Junction Temperature TJ -55/150 Ċ Storgae Temperature Range TSTG -55/150 Ċ Thermal Resistance-Junction to Ambient RǀJA 70 Ċ/W
Dual P Channel Enhancement Mode MOSFET -5.0A STANSON TECHNOLOGY www.bookly.com Copyright © 2007, Stanson Corp. STP4953 2007. V3 ELECTRICAL CHARACTERISTICS ( Ta = 25Ċ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V (BR)DSS V GS=0V,ID=-250uA -30 V Gate Threshold Voltage V GS(th) V DS=VGS,ID=-250 uA -1.0 -3.0 V Gate Leakage Current IGSS VDS=0V,VGS=Ô20V Ô100 nA VDS=-30V,VGS=0V -1 Zero Gate Voltage Drain Current I DSS TJ=55Ċ VDS=-30V,VGS=0V -5 uA On-State Drain Current I D(on) V DS=-5V,VGS=10V -25 A Drain-source On-Resistance R DS(on) VGS=-10V, ID=-5.0A VGS=-6.0V, ID=-4.4A VGS=-4.5V,ID=-4.0A 0.55 0.65 0.8 0.65 0.85 0.95 Ƹ Forward Tran Conductance gfs VDS=-10V,ID=-5.0A 9.0 S Diode Forward Voltage V SD I S=-2.0A,VGS=0V -0.8 -1.2 V Dynamic Total Gate Charge Qg 15 10 Gate-Source Charge Qgs 4.0 Gate-Drain Charge Qgd VDS=-15V,VGS=-10V ID≣-5.0A 2.0 nC Input Capacitance Ciss 680 Output Capacitance Coss 120 Reverse TransferCapacitance Crss VDS =-15V,VGS=0V f=1MHz pF 7.0 15 Turn-On Time td(on) tr 10 20 40 80 Turn-Off Time td(off) tf VDD=15V,RL=15Ƹ ID=-1.0A,VGEN=-10V RG=6Ƹ 20 40 nS
Dual P Channel Enhancement Mode MOSFET -5.0A STANSON TECHNOLOGY www.bookly.com Copyright © 2007, Stanson Corp. STP4953 2007. V4 TYPICAL CHARACTERICTICS (25Ċ Unless Note)
Dual P Channel Enhancement Mode MOSFET -5.0A STANSON TECHNOLOGY www.bookly.com Copyright © 2007, Stanson Corp. STP4953 2007. V5 TYPICAL CHARACTERICTICS (25Ċ Unless Note)
Dual P Channel Enhancement Mode MOSFET -5.0A STANSON TECHNOLOGY www.bookly.com Copyright © 2007, Stanson Corp. STP4953 2007. V6 TYPICAL CHARACTERICTICS (25Ċ Unless Note)
Dual P Channel Enhancement Mode MOSFET -5.0A STANSON TECHNOLOGY www.bookly.com Copyright © 2007, Stanson Corp. STP4953 2007. V7 SOP-8 PACKAGE OUTLINE