BM15N10

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el Enhancement Mode MOSFET SOP8 ,SOT23 andTO252 package design =115m100V/8A, /square6 DESCRIPTI ON /square6 FEATURE /rhombus6 100V/15 A, R DS(ON) =80.0mΩ(typ .)@VGS= 10V /rhombus6 RDS(ON) Ω(typ.)@V GS= 4.5V /rhombus6 Su per high design for extremely low RDS(ON) /rhombus6 Exceptional on-resistance and Maximum DC current capabili ty /rhombus6 Full RoHS compliance /rhombus6 /rhombus6 100% UIS Tested /rhombus6 100% Rg tested /square6 APPLICATIONS /rhombus6 Power Management /rhombus6 DC/DC Converter /rhombus6 Load Switch /square6 PIN CONFIGURATION D G S high cel l density advanced trench technology. The 15N10 is N channel enhancement mode power effect transitor which is produced using especially suited for low voltage application power management DC-DC converters. minize on-state resistance.These devices are. The high density process is especially able to BM15N10 www.bookly.com

Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±20 V TJ Maximum Junction Temperature 175 °C TSTG Storage Temperature Range -55 to 175 °C IS Diode Continuous Forward Current 5 A TC=25°C 64 IDP 300µs Pulse Drain Current Tested TC=100°C 44 A TC=25°C 15 ID Continuous Drain Current TC=100°C 11 A TC=25°C 60 PD Maximum Power Dissipation TC=100°C 30 W Rθ JC Thermal Resistance-Junction to Case 2.5 °C/W RθJA Thermal Resistance-Junction to Ambient 50 °C/W EAS Avalanche Energy, Single Pulsed (L=0.3mH) 30 mJ 100V N-Channel Enh ancement Mode MOSFET AP15N10DL

/square6 ELEC TR ICAL CHARACTERISTICS (TA =25℃ Unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 100 - - V VDS=80V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - 30 µA VGS(th) Gate Threshold Voltage VDS=VGS , IDS=250µA 1.5 2 2.5 V IGSS Gate Leakage Current VGS=±16V, VDS=0V - - ±10 µA VGS=10V, IDS=15A - 80 100 RDS(ON) a Drain-Source On-state Resistance VGS=4.5V, IDS=8A - 115 130 mΩ Diode Characteristics VSD a Diode Forward Voltage ISD=5A, VGS=0V 0.6 0.8 1.1 V trr Reverse Recovery Time 33 47 61 ns Qrr Reverse Recovery Charge IDS=5A, dlSD/dt=100A/µs 61 87 113 nC Dynamic Characteristics Ciss Input Capacitance 730 940 1250 Coss Output Capacitance 45 80 115 Crss Reverse Transfer Capacitance VGS=0V, VDS=30V, Frequency=1.0MHz 25 50 75 pF td(ON) Turn-on Delay Time - 13 24 tr Turn-on Rise Time - 10 19 td(OFF) Turn-off Delay Time - 32 60 tf Turn-off Fall Time VDD=30V, RL=30Ω , IDS=1A, VGEN=10V, RG=6Ω - 16 30 ns Gate Charge Characteristics b Qg Total Gate Charge 12 21 30 Qgs Gate-Source Charge 3.4 4.9 6.4 Qgd Gate-Drain Charge VDS=50V, VGS=10V, IDS=5A 2.9 5.8 8.7 nC Note a : Pulse test ; pulse width ≤ 300µs, duty cycle≤ 2%. Note b : Guaranteed by design, not subject to p roduction testing. 100V N-C hannel Enhancement Mode MOSFET AP15N10DL

/square6 TYPICA L CHARACTERISTICS (25℃ Unless Note) Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) ID - Drain Current (A) Normalized Transient Thermal Resistance Thermal Transient Impedance Square Wave Pulse Duration (sec) 0 20 40 60 80 100 120 140 160 180 TC=25 o C 0 20 40 60 80 100 120 140 160 180 TC=25 o C,VG=10V 0.01 0.1 1 10 100 500 0.01 0.1 100 300 300µs Rds(on) Limit TC=25 O C 10ms 1ms 100ms DC 1E-4 1E-3 0.01 0.1 1 10 100 0.01 0.1 Mounted on 1in pad Rθ JA :50 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Output Characteristics 0 1 2 3 4 5 5.5V 3.5V 4.5V VGS=6,7,8,9,10V RDS(ON) - On - Resistance (mΩ ) Drain-Source On Resistance ID - Drain Current (A) 0 4 8 12 16 20 100 120 140 160 180 200 220 VGS=4.5V VGS=10V 100V N- Channel Enhancement Mode MOSFET AP15N10DL

/square6 TO-252 Outline Package Dimension /G32/G68/G105/G109/G101/G110/G115/G105/G111/G110/G115/G32/G97/G114/G101/G32/G115/G116/G111/G119/G110/G32/G105/G110/G32/G109/G105/G108/G108/G105/G109/G101/G116/G101/G114/G115/G32/G40/G105/G110/G99/G116/G101/G115/G41 6.73 (.265) .35 (.250) - A - 1 2 3 6.22 (.245) 5.97 (.235) - B - 3X 0.89 (.035) 0.64 (.025) 0.25 (.010) M A M B 4.57 (.180) 2.28 (.090) 2X 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) MIN. 0.58 (.023) 0.46 (.018) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 10.42 (.410) 9.40 (.370) NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA.

4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,

SOLDER DIP MAX. +0.16 (.006). 100V N-Ch annel Enhancement Mode MOSFET AP15N10DL P A C KA G E P A C KA G E P A C KA G E P A C KA G E O U T L I N E O U T L I N E O U T L I N E O U T L I N E S O P S O P S O P S O P