BM3406AC-TR | DigiCamel IC Datasheet

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BM3406 BOOKLY | Alldatasheet

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PDF pages: 7

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/G4E/G2D/G43/G68/G61/G6E/G6E/G65/G6C/G20/G45/G6E/G68/G61/G6E/G63/G65/G6D/G65/G6E/G74/G20/G4D/G6F/G64/G65/G20/G4D/G4F/G53/G46/G45/G54 /G43/G6F/G70/G79/G72/G69/G67/G68/G74/G20 /G41/G4E/G50/G45/G43/G20/G45/G6C/G65/G63/G74/G72/G6F/G6E/G69/G63/G73/G20/G43/G6F/G72/G70/G2E /G52/G65/G76/G2E/G20/G42/G2E/G31/G20/G2D/G20/G4A/G61/G6E/G2E/G2C/G20/G32/G30/G30/G35 /G77/G77/G77/G2E/G61/G6E/G70/G65/G63/G2E/G63/G6F/G6D/G2E/G74/G77/G31 /G41/G4E/G50/G45/G43/G20/G72/G65/G73/G65/G72/G76/G65/G73/G20/G74/G68/G65/G20/G72/G69/G67/G68/G74/G20/G74/G6F/G20/G6D/G61/G6B/G65/G20/G63/G68/G61/G6E/G67/G65/G73/G20/G74/G6F/G20/G69/G6D/G70/G72/G6F/G76/G65/G20/G72/G65/G6C/G69/G61/G62/G69/G6C/G69/G74/G79/G20/G6F/G72/G20/G6D/G61/G6E/G75/G66/G61/G63/G74/G75/G72/G61/G62/G69/G6C/G69/G74/G79/G20/G77/G69/G74/G68/G6F/G75/G74/G20/G6E/G6F/G74/G69/G63/G65/G2C/G20/G61/G6E/G64/G20/G61/G64/G76/G69/G73/G65 /G63/G75/G73/G74/G6F/G6D/G65/G72/G73/G20/G74/G6F/G20/G6F/G62/G74/G61/G69/G6E/G20/G74/G68/G65/G20/G6C/G61/G74/G65/G73/G74/G20/G76/G65/G72/G73/G69/G6F/G6E/G20/G6F/G66/G20/G72/G65/G6C/G65/G76/G61/G6E/G74/G20/G69/G6E/G66/G6F/G72/G6D/G61/G74/G69/G6F/G6E/G20/G74/G6F/G20/G76/G65/G72/G69/G66/G79/G20/G62/G65/G66/G6F/G72/G65/G20/G70/G6C/G61/G63/G69/G6E/G67/G20/G6F/G72/G64/G65/G72/G73/G2E /G41/G50/G4D/G32/G33/G30/G36/G41 /G46/G65/G61/G74/G75/G72/G65/G73 /G41/G70/G70/G6C/G69/G63/G61/G74/G69/G6F/G6E/G73

Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. /G50/G69/G6E/G20/G44/G65/G73/G63/G72/G69/G70/G74/G69/G6F/G6E /G4F/G72/G64/G65/G72/G69/G6E/G67/G20/G61/G6E/G64/G20/G4D/G61/G72/G6B/G69/G6E/G67/G20/G49/G6E/G66/G6F/G72/G6D/G61/G74/G69/G6F/G6E BM3406 Handling Code Temp. Range Package Code Package Code A : SOT-23 Operating Junction Temp. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device BM3406 MARK : A XXXXX - Date Code Lead Free Code Top View of SOT-23 N-Channel MOSFET
+30V / 4A , N-MOSFET RDS(ON) =30m Ω(typ.) @ VGS =10V RDS(ON) =50m Ω(typ.) @ VGS =4.5V
Super High Dense Cell Design
•••• Reliable and Rugged
•••• Lead Free Available (RoHS Compliant) D G S G S D Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina- tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica- tion at lead-free peak reflow temperature. BM3406 BOOKLY MICRO

/G77/G77/G77/G2E/G61/G6E/G70/G65/G63/G2E/G63/G6F/G6D/G2E/G74/G77/G32 /G41/G50/G4D/G32/G33/G30/G36/G41 /G41/G62/G73/G6F/G6C/G75/G74/G65/G20/G4D/G61/G78/G69/G6D/G75/G6D/G20/G52/G61/G74/G69/G6E/G67/G73 (TA = 25°C unless otherwise noted) /G45/G6C/G65/G63/G74/G72/G69/G63/G61/G6C/G20/G43/G68/G61/G72/G61/G63/G74/G65/G72/G69/G73/G74/G69/G63/G73/G20/G20(TA = 25°C unless otherwise noted) Symbol Parameter Rating Unit VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 V ID * Continuous Drain Current 4.0 IDM * 300µs Pulsed Drain Current VGS =10V 12 A IS* Diode Continuous Forward Current 1.3 A TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 TA=25°C 0.83 PD * Maximum Power Dissipation TA=100°C 0.3 W R θJA* Thermal Resistance-Junction to Ambient 150 °C/W Note: *Surface Mounted on 1in2 pad area, t ≤ 10sec./G20 BM3406 Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage VGS =0V, IDS =250µA 30 V VDS =24V, VGS =0V 1 IDSS Zero Gate Voltage Drain Current T J=85°C 30 µA VGS(th) Gate Threshold Voltage VDS =V GS , IDS =250µA 1 1.5 2 V IGSS Gate Leakage Current V GS =±20V, VDS =0V ±100 nA VGS =10V, IDS =4A 430 645 R DS(ON) a Drain-Source On-state Resistance VGS =4.5V, IDS =2.8A 55 m Ω VSD a Diode Forward Voltage I SD =1.25A, VGS =0V 0.8 1.3 V Gate Charge Characteristics b Q g Total Gate Charge 12.5 16 Q gs Gate-Source Charge 2.4 Q gd Gate-Drain Charge VDS =15V, VGS =10V, IDS =4A 1.3 nC /G20 BM3406 BOOKLY MICRO

/G77/G77/G77/G2E/G61/G6E/G70/G65/G63/G2E/G63/G6F/G6D/G2E/G74/G77/G33 /G41/G50/G4D/G32/G33/G30/G36/G41 /G45/G6C/G65/G63/G74/G72/G69/G63/G61/G6C/G20/G43/G68/G61/G72/G61/G63/G74/G65/G72/G69/G73/G74/G69/G63/G73/G20/G28/G43/G6F/G6E/G74/G2E/G29/G20(TA = 25°C unless otherwise noted) BM3406 Symbol Parameter Test Condition Min. Typ. Max. Unit Dynamic Characteristics b R G Gate Resistance V GS =0V,VDS =0V,F=1MHz 1.5 Ω C iss Input Capacitance 400 C oss Output Capacitance 80 C rss Reverse Transfer Capacitance VGS =0V, VDS =25V, Frequency=1.0MHz 45 pF td(ON) Turn-on Delay Time 10 19 Tr Turn-on Rise Time 8 15 td(OFF) Turn-off Delay Time 19 35 Tf Turn-off Fall Time VDD =15V, RL=15Ω , IDS =1A, VGEN =10V, R G =6Ω 6.2 12 ns Notes: a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. BM3406 BOOKLY MICRO

/G77/G77/G77/G2E/G61/G6E/G70/G65/G63/G2E/G63/G6F/G6D/G2E/G74/G77/G34 /G41/G50/G4D/G32/G33/G30/G36/G41 1E-4 1E-3 0.01 0.1 1 10 100 1E-3 0.01 0.1 Mounted on 1in pad R θJA : 150 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 /G54/G79/G70/G69/G63/G61/G6C/G20/G43/G68/G61/G72/G61/G63/G74/G65/G72/G69/G73/G74/G69/G63/G73 ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) ID - Drain Current (A) 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 TA=25 o C 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 TA=25 o C,VG =10V 0.01 0.1 1 10 100 0.01 0.1 Rds(on) Limit TA=25 o C 10ms 300µs 1ms 100ms DC Normalized Transient Thermal Resistance BM3406 BOOKLY MICRO

/G77/G77/G77/G2E/G61/G6E/G70/G65/G63/G2E/G63/G6F/G6D/G2E/G74/G77/G35 /G41/G50/G4D/G32/G33/G30/G36/G41 R DS(ON) - On - Resistance (mΩ ) Drain-Source On Resistance ID - Drain Current (A) Tj - Junction Temperature (°C) Gate Threshold Voltage VDS - Drain - Source Voltage (V) ID - Drain Current (A) Output Characteristics Transfer Characteristics VGS - Gate - Source Voltage (V) ID - Drain Current (A) Normalized Threshold Voltage /G54/G79/G70/G69/G63/G61/G6C/G20/G43/G68/G61/G72/G61/G63/G74/G65/G72/G69/G73/G74/G69/G63/G73/G20/G28/G43/G6F/G6E/G74/G2E/G29 012345 VGS = 5, 6, 7, 8, 9, 10V 02468 1 0 100 120 VGS =5V VGS =10V 01234567 TJ=-55 o C TJ=25 o C TJ=125 o C -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250µΑ BM3406 BOOKLY MICRO

-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 R ON @T j=25 o C: 42mΩ VGS = 10V IDS = 4A TJ=150 o C TJ=25 o C 0 5 10 15 20 25 30 100 200 300 400 500 600 Frequency=1MHz Crss Coss Ciss 0 2 4 6 8 10 12 14 VDS = 15V ID = 3.5A BM3406 BOOKLY MICRO

/G77/G77/G77/G2E/G61/G6E/G70/G65/G63/G2E/G63/G6F/G6D/G2E/G74/G77/G37 /G41/G50/G4D/G32/G33/G30/G36/G41 /G50/G61/G63/G6B/G61/G67/G69/G6E/G67/G20/G49/G6E/G66/G6F/G72/G6D/G61/G74/G69/G6F/G6E SOT-23 D E H e A A1 L C B Millimeters Inches Dim Min. Max. Min. Max. A 1.00 1.30 0.039 0.051 A1 0.00 0.10 0.000 0.004 B 0.35 0.51 0.014 0.020 C 0.10 0.25 0.004 0.010 D 2.70 3.10 0.106 0.122 E 1.40 1.80 0.055 0.071 H 2.40 3.00 0.094 0.118 L 0.37 0.015 BM3406 BOOKLY MICRO

Product Information

BM3406AC-TR specifications and overview.

Summary

N-Channel Enhnancement Mode MOSFET

Description

N-Channel Enhnancement Mode MOSFET

Source title BM3406AC-TR Datasheet(PDF) - Bookly Micro electronic

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