BM3401

BM3401 BOOKLY | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

Document Number: 70843 S-60570—Rev. A, 16-Nov-98 www.vishay.com FaxBack 408-970-5600 11-1 P-Channel 30V (D-S) 4.5A P-MOSFET /C0068/C0067 VDS (V) rDS(on) () ID (A) –30 –30 G T (SOT-23) S D Top View Si2307DS (A7)* *Marking Code /C0067 /C0072 /C0068 Parameter Symbol Limit Unit Drain-Source Voltage VDS –30 V Gate-Source Voltage VGS 20 V Continuous Drain Current (TJ = 150C)a, b TA= 25C ID A Continuous Drain Current (TJ = 150C)a, b TA= 70C ID –2.5 A Pulsed Drain Current IDM –12 A Continuous Source Current (Diode Conduction)a, b IS –1.25 Power Dissipationa, b TA= 25C PD 1.25 WPower Dissipationa, b TA= 70C PD 0.8 W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 C /C0072 /C0067 Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t 5 sec R thJA 100 C/WMaximum Junction-to-Ambienta Steady State R thJA 130 C/W Notes a. Surface mounted on FR4 board. b. t 5 sec. BOOKLY MICRO www.bookly.com

Document Number: 70843 S-60570—Rev. A, 16-Nov-2 /C0083/C0080/C0069/C0067/C0073/C0070/C0073/C0067/C0084/C0073/C0079/C0078/C0083 /C0084/C0074 /C0067 /C0085/C0078/C0069/C0083/C0083 /C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069 /C0078/C0079/C0084/C0069/C0068 Limits Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = –10 /C0109A –30 V Gate-Threshold Voltage VGS(th) VDS = VGS , ID = –250 /C0109A –1.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = 20 V 100 nA Zero Gate Voltage Drain Current IDSS VDS = –24 V, VGS = 0 V –1 /C0109AZero G ate Voltage D rain C urrent IDSS TJ = 55C –10 /C0109A On-State Drain Currenta ID(on) VDS /C0118 –5 V, VGS = –10 V –6 A Drain Source On Resistancea rDS( ) VGS = –10 V, ID = –4A 0.05 0.065 Drain-Source On-Resistancea rDS(on) VGS = –4.5 V, ID = –2.5 A 0.070 0.085 Forward Transconductancea gfs VDS = –10V, ID = –3 A 4.5 S Diode Forward Voltage VSD IS = –1.25 A, VGS = 0 V –1.2 V Dynamic b Total Gate Charge Q g V 1 5V V 1 0V 10 15 CGate-Source Charge Q gs VDS = –15 V, VGS = –10 V ID /C0094 –3 A 1.9 nC Gate-Drain Charge Q gd ID /C0094 3 A Input Capacitance C iss V1 5 V V 0 f 1 M H 565 FOutput Capacitance C oss VDS = –15 V, VGS = 0, f = 1 MHz 126 pF Reverse Transfer Capacitance C rss 75 Switchingb Turn-On Time td(on) V1 5 V R 1 5 10 20 Turn-On Time tr VDD = –15 V, RL = 15 ID /C0094 –1.0 A, VGEN = –10 V 9 20 ns Turn-Off Time td(off) ID /C0094 –1.0 A, VGEN = –10 V R G = 6 27 50 ns Turn-Off Time tf 7 16 Notes a. Pulse test: PW /C0118300 /C0109s duty cycle /C01182%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. BOOKLY MICRO www.bookly.com

Document Number: 70843 S-333360570—Rev. A, 16-Nov-98 55444 www.vishay.com FaxB 3 /C0084/C0089/C0080/C0073/C0067/C0065/C0076 /C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083 /C0067 /C0085/C0078/C0076/C0069/C0083/C0083 /C0078/C0079/C0084/C0069/C0068 02468 1 0 On-Resistance vs. Drain Current Output Characteristics Transfer Characteristics VDS – Drain-to-Source Voltage (V) – Drain Current (A)ID VGS – Gate-to-Source Voltage (V) – Drain Current (A)ID

012345 TC = –55C

0.6 0.8 1.0 1.2 1.4 1.6 –50 0 50 100 150 02468 1 0 0.2 0.4 0.6 02468 1 0 Gate Charge – Gate-to-Source Voltage (V) Q g – Total Gate Charge (nC) VDS – Drain-to-Source Voltage (V) C – Capacitance (pF) V GS C rss C oss C iss VDS = 15 V ID = 3 A – On-Resistance (rDS(on) ) ID – Drain Current (A) Capacitance On-Resistance vs. Junction Temperature VGS = 10 V ID = 3 A TJ – Junction Temperature (C) (Normalized) – On-ResistancerDS(on) VGS = 10 V VGS = 4.5 V 25C VGS = 10 thru 5 V BOOKLY MICRO www.bookly.com

www.vishay.com FaxBack 408-970-5600 Document Number: 70843 S-60570—Rev. A, 16-Nov-98 /C0084/C0089/C0080/C0073/C0067/C0065/C0076 /C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083 /C0067 /C0085/C0078/C0076/C0069/C0083/C0083 /C0078/C0079/C0084/C0069/C0068 0.01 0.10 1.00 0.01 10 5000.1 100 0.1 1.0 10.0 Power (W) –0.4 –0.2 0.0 0.2 0.4 0.6 –50 –25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 02468 1 0 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) – Source Current (A)IS TJ – Temperature (C) Time (sec) Variance (V)V GS(th) ID = –3 A ID = 250 /C0109A TA = 25C Single Pulse TJ = 25C TJ = 150C 10–3 10–2 1 10 50010–110–4 100 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 – On-Resistance (rDS(on) ) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 130C/W 3. TJM – TA = PDM ZthJA(t) Notes: 4. Surface Mounted PDM BOOKLY MICRO BOOKLY MICRO www.bookly.com 4

/G77/G77/G77/G2E/G61/G6E/G70/G65/G63/G2E/G63/G6F/G6D/G2E/G74/G77/G37 /G41/G50/G4D/G32/G33/G30/G36/G41 /G50/G61/G63/G6B/G61/G67/G69/G6E/G67/G20/G49/G6E/G66/G6F/G72/G6D/G61/G74/G69/G6F/G6E SOT-23 D E H e A A1 L C B Millimeters Inches Dim Min. Max. Min. Max. A 1.00 1.30 0.039 0.051 A1 0.00 0.10 0.000 0.004 B 0.35 0.51 0.014 0.020 C 0.10 0.25 0.004 0.010 D 2.70 3.10 0.106 0.122 E 1.40 1.80 0.055 0.071 H 2.40 3.00 0.094 0.118 L 0.37 0.015 BM3401 BOOKLY MICRO BOOKLY MICRO www.bookly.com 5