BM2341 BOOKLY | Alldatasheet

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Technical content

P Channel Enhancement Mode MOSFET -3.5A STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.bookly.com ST2341 2006. Rev.1

DESCRIPTION

BM2341 is the P-Channel logic enhancement mo de power field effect transistor which is produced usi ng high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L Y: Year Code A: Process Code

ORDERING INFORMATION

Part Number Package Part Marking ST2341S23RG SOT-23-3L 41YA ※ Process Code : A ~ Z ; a ~ z ※ ST2341S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free FEATURE z -20V/-3.3A, R DS(ON) = 36m-ohm (Typ.) @VGS = -10V z -20V/-2.8A, RDS(ON) = 45m-ohm @VGS = -4.5V z -20V/-2.3A, RDS(ON) = 55m-ohm @VGS = -1.8V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design 1 2 D G S 1 2 41YA

P Channel Enhancement Mode MOSFET -3.5A STANSON TECHNOLOGY www.bookly.com ST2341 2006. Rev.12 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ ID -3.5 -2.8 A Pulsed Drain Current IDM -12 A Continuous Source Current (Diode Conduction) I S -1.0 A Power Dissipation TA=25℃ TA=70℃ PD 1.25 0.80 W Operation Junction Temperature TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 140 ℃/W

P Channel Enhancement Mode MOSFET -3.5A STANSON TECHNOLOGY www.bookly.com ST2341 2006. Rev.3 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V (BR)DSS V GS=0V,ID=-250uA -20 V Gate Threshold Voltage V GS(th) V DS=VGS,ID=-250uA -0.35 -0.9 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 nA VDS=-20V,VGS=0V -1 Zero Gate Voltage Drain Current I DSS VDS=-20V,VGS=0V TJ=55℃ -10 uA On-State Drain Current I D(on) VDS≦-5V,VGS=-4.5V -6 A Drain-source On-Resistance R DS(on) VGS=-4.5V,ID=-3.3A VGS=-2.5V,ID=-2.8A VGS=-1.8V,ID=-2.3A 0.036 0.045 0.055 Forward Transconductance g fs V DS=-5V,ID=-4V 3.0 S Diode Forward Voltage VSD I S=-1A,VGS=0V -0.8 -1.2 V Dynamic Total Gate Charge Qg 8.0 13 Gate-Source Charge Qgs 1.2 Gate-Drain Charge Qgd VDS=-6V VGS=-4.5V ID≣-3.3A 2.2 nC Input Capacitance Ciss 700 Output Capacitance Coss 160 Reverse Transfer Capacitance Crss VDS=-6.0V VGS=0V F=1MHz 120 pF 15 25 Turn-On Time td(on) tr 35 55 60 90 Turn-Off Time td(off) tf VDD=-6V RL=6Ω ID=-1.0A VGEN=-4.5V RG=6Ω 40 40 nS

P Channel Enhancement Mode MOSFET -3.5A STANSON TECHNOLOGY www.bookly.com ST2341 2006. Rev.4 TYPICAL CHARACTERICTICS (25℃ Unless noted)

P Channel Enhancement Mode MOSFET -3.5A STANSON TECHNOLOGY www.bookly.com ST2341 2006. Rev.5 TYPICAL CHARACTERICTICS (25℃ Unless noted)

P Channel Enhancement Mode MOSFET -3.5A STANSON TECHNOLOGY www.bookly.com ST2341 2006. Rev.6 SOT-23-3L PACKAGE OUTLINE