BM2302 BOOKLY | Alldatasheet
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www .bookly.com 2-1 N-Channel 1.25-W, 2.5-V MOSFET /C0068/C0067 VDS (V) rDS(on) () ID (A) 0.085 @ VGS = 4.5 V 2.8 0.115 @ VGS = 2.5 V 2.4 G S D Top View TO-236 (SOT-23) /C0067 /C0072 /C0068 Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 12 V Continuous Drain Current (TJ = 150C)b TA= 25C ID 2.8 A Continuous Drain Current (TJ = 150C)b TA= 70C ID 2.2 A Pulsed Drain Currenta IDM 10 A Continuous Source Current (Diode Conduction)b IS 1.6 Power Dissipationb TA= 25C PD 1.25 WPower Dissipationb TA= 70C PD 0.80 W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 C /C0072 /C0067 Parameter Symbol Limit Unit Maximum Junction-to-Ambientb R thJA 100 C/W Maximum Junction-to-Ambientc R thJA 166 C/W Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t 5 sec. c. Surface Mounted on FR4 Board.
/C0083/C0080/C0069/C0067/C0073/C0070/C0073/C0067/C0084/C0073/C0079/C0078/C0083 /C0084 /C0067 /C0085/C0078/C0076/C0069/C0083/C0083 /C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069 /C0078/C0079/C0084/C0069/C0068 Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 /C0109A 20 V Gate-Threshold Voltage VGS(th) VDS = VGS , ID = 50 /C0109A 0.5 1.2 V Gate-Body Leakage IGSS VDS = 0 V, VGS = 8 V 100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 /C0109AZero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V, TJ = 55C 10 /C0109A On -State Drain Currenta ID(on) VDS /C0119 5 V, VGS = 4.5 V 6 AOn -State Drain Currenta ID(on) VDS /C0119 5 V, VGS = 2.5 V 4 A Drain-Source On-Resistancea rDS(on) VGS = 4.5 V, ID = 3.6 A 0.07 0.085 Drain-Source On -Resistancea rDS(on) VGS = 2.5 V, ID = 3.1 A 0.085 0.115 Forward Transconductancea gfs VDS = 5 V, ID = 3.6 A 10 S Diode Forward Voltage VSD IS = 1.6 A, VGS = 0 V 0.76 1.2 V Dynamic Total Gate Charge Q g V 1 0V V 45V I 36A 5.4 10 CGate-Source Charge Q gs VDS = 10 V, VGS = 4.5 V, ID = 3.6 A 0.65 nC Gate-Drain Charge Q gd 1.60 Input Capacitance C iss V 1 0V V 0V f 1M H 340 FOutput Capacitance C oss VDS = 10 V, VGS = 0 V, f = 1 MHz 115 pF Reverse Transfer Capacitance C rss 33 Switching Turn-On Delay Time td(on) V1 0 V R 5 5 12 25 Rise Time tr VDD = 10 V, RL = 5.5 I3 6 A V 4 5 V R 6 36 60 ns Turn-Off Delay Time td(off) DD , L ID /C0094 3.6 A, VGEN = 4.5 V, RG = 6 34 60 ns Fall-Time tf 10 25 Notes a. Pulse test: PW /C0118300 /C0109s duty cycle /C01182%..
www.vishay.com FaxBack 408-970-5600 2-3 /C0084/C0089/C0080/C0073/C0067/C0065/C0076 /C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083 /C0067 /C0085/C0078/C0076/C0069/C0083/C0083 /C0078/C0079/C0084/C0069/C0068 On-Resistance vs. Drain Current Output Characteristics Transfer Characteristics VDS – Drain-to-Source Voltage (V) – Drain Current (A)ID VGS – Gate-to-Source Voltage (V) – Drain Current (A)ID 012345 TC = 125C –55C 0, 0.5, 1 V VGS = 5 thru 2.5 V 1.5 V 2 V 200 400 600 800 1000 0 4 8 12 16 20 0.6 0.8 1.0 1.2 1.4 1.6 1.8 –50 0 50 100 150 01234567 0.03 0.06 0.09 0.12 0.15 02468 1 0 Gate Charge – Gate-to-Source Voltage (V) Q g – Total Gate Charge (nC) VDS – Drain-to-Source Voltage (V) C – Capacitance (pF) V GS C rss C oss C iss VDS = 10 V ID = 3.6 A – On-Resistance (rDS(on) ) ID – Drain Current (A) Capacitance On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 3.6 A TJ – Junction Temperature (C) (Normalized) – On-Resistance (rDS(on) ) VGS = 2.5 V VGS = 4.5 V 25C
/C0084/C0089/C0080/C0073/C0067/C0065/C0076 /C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083 /C0067 /C0085/C0078/C0076/C0069/C0083/C0083 /C0078/C0079/C0084/C0069/C0068 Power (W) –0.4 –0.3 –0.2 –0.1 –0.0 0.1 0.2 –50 0 50 100 150 0.04 0.08 0.12 0.16 0.20 02468 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 0.1 0.01 10–4 10–3 10–2 10–1 1 Normalized Effective Transient Thermal Impedance – On-Resistance (rDS(on) ) VSD – Source-to-Drain Voltage (V) V GS – Gate-to-Source Voltage (V) – Source Current (A)IS TJ – Temperature (C) Variance (V)V GS(th) 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 ID = 3.6 A ID = 250 /C0109A TJ = 25C TJ = 150C 0.01 0.10 1.00 10.00 Time (sec) TC = 25C Single Pulse