BM2300 BOOKLY | Alldatasheet
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Technical content
N Channel Enhancement Mode MOSFET
120 Bentley Square, Mountain View, Ca 94040 USA
www.bookly.com ST2300 2005. V1
DESCRIPTION
The BM2300 is the N-Channel logic enhancement mode power field effe ct transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number Package Part Marking BM2300 SOT-23-3L 42YA ※ Process Code : A ~ Z ; a ~ z ※ BM2300 : SOT23-3L R : Tape Reel ; G : Pb – Free FEATURE z 20V/6.0A, R DS(ON) = 27mΩ (Typ.) @VGS = 10V z 20V/5.0A, RDS(ON) = 30mΩ @VGS = 4.5V z 20V/4.5A, RDS(ON) = 34mΩ @VGS = 2.5V z 20V/4.0A, RDS(ON) = 40mΩ @VGS = 1.8V z Super high density cell design for extremely low R DS(ON) z Exceptional on-resistance and Maximum DC current capability z SOT-23-3L package design 1 2 D G S 1 2 42YA
N Channel Enhancement Mode MOSFET www.bookly.com ST2300 2005. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID 4.0 3.0 A Pulsed Drain Current IDM 13 A Continuous Source Current (Diode Conduction) IS 1.0 A Power Dissipation TA=25℃ TA=70℃ PD 1.25 0.8 W Operation Junction Temperature TJ 150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 140 ℃/W
N Channel Enhancement Mode MOSFET www.bookly.com ST2300 2005. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS V GS=0V,ID=250uA 20 V Gate Threshold Voltage V GS(th) V DS=VGS,ID=250uA 0.4 1.0 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 nA VDS=20V,VGS=0V 1 Zero Gate Voltage Drain Current I DSS VDS=20V,VGS=0V TJ=85℃ 10 uA On-State Drain Current I D(on) VDS≧5V,VGS=4.5V 6 A Drain-source On-Resistance R DS(on) VGS=10V,ID=6.0A VGS=4.5V,ID=5.0A VGS=2.5V,ID=4.5A VGS=1.8V,ID=4.0A 0.027 0.030 0.034 0.04 Ω Forward Tranconductance g fs V DS=15V,ID=5.0A 30 S Diode Forward Voltage VSD I S=1.7A,VGS=0V 0.9 1.3 V Dynamic Total Gate Charge Qg 10 13 Gate-Source Charge Qgs 1.4 Gate-Drain Charge Qgd VDS=10V VGS=4.5V ID≣5A 2.1 nC Input Capacitance Ciss 600 Output Capacitance Coss 120 Reverse Transfer Capacitance C rss VDS=10V VGS=0V F=1MHz 100 pF 15 25 Turn-On Time td(on) tr 40 60 45 65 Turn-Off Time td(off) tf VDD=10V RL=10Ω ID=1A VGEN=4.5V RG=6Ω 30 40 nS
N Channel Enhancement Mode MOSFET www.bookly.com ST2300 2005. V1 TYPICAL CHARACTERICTICS (25℃ Unless noted)
N Channel Enhancement Mode MOSFET www.bookly.com ST2300 2005. V1 TYPICAL CHARACTERICTICS (25℃ Unless noted)
N Channel Enhancement Mode MOSFET www.bookly.com ST2300 2005. V6 TYPICAL CHARACTERICTICS
N Channel Enhancement Mode MOSFET www.bookly.com ST2300 2005. V7 SOT-23-3L PACKAGE OUTLINE