BLY93H NJSEMI | Alldatasheet
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(l£Ti£u ^zmi-Conductoi ^Pioaucti, Line. CX t/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BLY93H TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLY93H is Designed for Class C, 28 V High Band Applications up to 175 MHz. FEATURES:
- Common Emitter
- PG = 9.0dBat25W/175MHz
- Omnigold™ Metalization System MAXIMUM RATINGS Ic VCBO VCEO VEBO PDISS Tj TSTG 6JC 3.0 A 65V 35V 4.0V
70 W @ Tc = 25
-65 °C to +200 ° -65 °C to +150° C C 2.5 °C/W PACKAGE STYLE .380 4L STUD #8-32 UNC-2A MINIMUM MAXIMUM Inches / mm .490 / 12.45 CHARACTERISTICS Tc = 25°c SYMBOL BVcEo BVCES BVEBO ICES HFE TEST CONDITIONS lc = 50 mA lc = 10mA IE = 10mA VCE = 36 V VCE = 5.0V IC = 1.25A COB GP ft VCB = 28V f= 1.0 MHz VCE = 28V f= 175 MHz VCB = 28V IE = 200mA f= 100 MHz MINIMUM 4.0 9.0 TYPICAL MAXIMUM 4.0 100 UNITS V V V mA 625 ... PF dB MHz M Semi-l uiuJuuori re.'erves the right in change lest candiiinns. parameter limiti nnd package dimensions without notice liilbrmiilion funrnh«J by Nl Scmi-Cunilucton ii believed to be htilh accurate nnd reliable ,il the lime ul' guing lo press. H<nvevcr M Semi c miJutlurs I-,MHIH-S mi re-^ptiMsibility lor my errors *>r Dinivsions Jisujvcfed in its ti.se ,NJ Seini-C uiiilm.li rs c n-.ti ii'crs in <.ciil\\h u .liil^hctfta ire current htlore placing ,<r<kn