BLY93A NJSEMI | Alldatasheet
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U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 Part Number: DescrIption: BLY93A BJTs , Si NPN Power HP" The RF Line NPN SILICON RF POWER TRANSISTOR . . . designed primarily for wideband large-signal amplifier stages in the 125-175 MHz frequency range.
- Specified 28 Volt, 175 MHz Characteristics - Output Power « 40 Watts Minimum Gain - 7.6 dB Efficiency = 60%
- Characterized from 125 to 175 MHz
- Includes Series Equivalent Impedances
- MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 35 Vdc Collector-Sate Voltage vcg 65 Vdc Emitler-Base Voltage VgB 40 Vdc Collector Current - Continuous If- 5.0 Adc Total Device Oiuipation ® Tc • 2S°C PQ 60 Wattl Oerete above 2S°C 342 mW/°C Operating and Storage Junction Tj,TItg -65 10 +200 °C
- Indicate! JEDEC Regiitered Data.
40 W- 175 MHz
] J~ ~7™S^-uaat T ( tuiMUK^' • tU 1 MWWAH-- — -^j j -1 — lU-L ^ ""-- 1 * ' Jj \\ * r^WF^1^ %^-' PIN 1. EMITTER 2. BASE 3, EMITTEfl 4. COLLECTDB MM MM MAX MM MU 8 8.13 8.38 0.320 0.330 i C 17.02 20.07 0.670 0790 I 178 - 0070 J 0.08 0.18 0.003 0007 < L 1.40 1.78 | O.OS5 0070 M 45° NOW 45' NOV. t - 1 1.27 - O.OSO i R 7S9 780 0299 0307 < S 4.01 4.S2 0.1S9 0.178 T 2.11 2.54 0083 0100 1 U 2.49 3.35 0.091 0132 Quality Semi-Conductors
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Part Number - BLY Description: 8JT Si NPN Power HP
- ELECTRICAL CHARACTERISTICS ITC - 25°C unlei, other™,,, noted, I L Characteristic Symbol I Typ OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage I Note 1) (!<;- 200 mAdc. IB » 01 Collector-Emitter Breakdown Voltage (IC» 200mAdc. VBE «OI Emitter-Base Breakdown Voltage (lg- 10 mAdc. Ic "0) Collector Cutoff Current IVCB = 30Vdc. IE= 01 VIBRICEO VIBRICES VIBRIEBO ICBO 4.0 1,0 Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (1C • 500 mAdc, VCE - 50 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB ' 30 Vdc, IE • 0. f • 0 1 to I.OMHzl hfE Cob FUNCTIONAL TEST Common Emitter Amplifier Power Gain (Figure 1) (Pou,« 40 Watts, VCE * 28 Vdc, f - 175MHzl Collector Efficiency (Figure 1) (Pou, - 40 Watts, VCE • 28 Vdc, f * 1 75 MHz! aP6 5.0 7.6 pF 8.1 dB Note 1 Pulsed through 25 mH inductor
- Indicates JEDEC Registered Data. FIGURE 1-175 MHl TEST CIRCUIT SCHEMATIC C1.C2.C3.C4 ARCO 46426 280 pF C5 0.1 iif LI V Straight #14 AWG L2 1 Turn *16 AWG, 1/4" I.D. L3 0.22 MH Quality Semi-Conductors