BLY87C NJSEMI | Alldatasheet
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(l^asu ^E.mi-(2ond\\jLcto\\ (inc. C/ 4/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. VHP power transistor TELEPHONE: (973) 376-2922 (212)237-6005 FAX: (973) 376-8960 BLY87C
DESCRIPTION
N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage 16,5 V. It has a 3/8" capstan envelope with a ceramic cap. All leads are isolated from the stud. QUICK REFERENCE DATA R.F. performance up to Th = 25 "C in an unneutralized common-emitter class-B circuit MODE OF OPERATION C.W. c.w. VCE V 13,5 12,5 f MHz 175 175 PL W Gp dB > 12,0 typ. 11,5 > 60 typ. 65 Zj Q 2,2+jO,4 YL mS 96-J28 PIN CONFIGURATION PINNING-SOT120 Fig.1 Simplified outline and symbol. PIN NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use NI Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Qunlih/
Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value VCESM Collector-emitter voltage (open base) VCEO Emitter-base voltage (open collector) VEBO Collector current (average) IQAV) Collector current (peak value); f> 1 MHz ICM R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Prt Storage temperature Tstg Operating junction temperature Tj Fig.2 D.C. SOAR. 36 V 18 V 4 V 1,5 A 4,0 A 20 W -65 to + 150 "C max. 200 "C max. max. max. max. max. max.
50 Th(oC) 100
I Continuous d.c operation II Continuous r.f. operation III Short-time operation during mismatch Fig.3 R.F. power dissipation; VCE ^ 16,5 V; f> 1 MHz. THERMAL RESISTANCE (dissipation = 8 W; Tmb = 73,5 "C, i.e. Th = 70 °C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rfh j-mb(dc) Rth j-mb(rf) Rfh mb-h 10,7 KM/ 8,6 KM/ 0,45 KM/
TJ = 25 °C Collector-emitter breakdown voltage VBE = 0; lc = 5 mA Collector-emitter breakdown voltage open base; lc = 25 rnA Emitter-base breakdown voltage open collector; IE = 1 mA Collector cut-off current VBE = 0; VCE=18V Second breakdown energy; L = 25 mH; f = 50 Hz open base RBE = 1 0 Q D.C. current gain '1' lc = 0,75 A; VCE = 5 V Collector-emitter saturation voltage <1) IC = 2A; IB = 0,4 A Transition frequency at f = 1 00 MHz <1> -IE = 0,75 A; VCB = 13,5V -IE = 2 A; VCB = 13,5V Collector capacitance at f = 1 MHz IE = le = 0; VCB = 13,5V Feedback capacitance at f = 1 MHz lc= 100mA; VCE= 13,5V Collector-stud capacitance Note 1. Measured under pulse conditions: tp < 200 (is; 6 <0,02, V(BR) CES V(BR)CEO V(BR)EBO ICES ESBO ESBR HFE VcEsat fy fT Cc Cre Cos > 36 > 18 > 4 < 2 > 0,5 > 0,5 typ. 40 10 to 100 typ. 0,85 typ. 950 typ. 850 typ 16,5 typ. 12 typ. 2 V V V mA mJ mJ V MHz MHz PF PF PF
Studded ceramic package; 4 leads SOT120A w I detail X 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT 597 474 .4.. inches 0.283 0248 b 590 5,48 0,232 D.216 c 018 014 0007 0004 D 9,73 9,47 0,383 0.373 8.39 812 0.330 0320 966 9,39 27.44 25,78 9.00 800 0.380 1080 0354 0,370 1.015 M 3.41 292 0134 0115 1.66 1.39 0.065 0055 N 1283 11.17 1.60 000 0063 0000 331 2.54 W 435 398 8-32 0.130 o 171 j 0.100 0.157 038 0015 OUTLINE VERSION REFERENCES IEC SOT120A JEDEC EIAJ EUROPEAN PROJECTION