BLX65 NJSEMI | Alldatasheet
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<Se.ml-CQncL.ckoi tPioducti, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 BLX65 N-P-N transistor intended for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. It has a TO-39 metal envelope with the collector connected to the case. QUICK REFERENCE DATA R.F. performance up to Tcase = 25 °C in an unneutralized common-emitter class-B circuit mode of operation c.w. c.w. c.w. VCE V 13,8 12,5 12,5 f MHz 470 470 175 PS W typ. 0,4 < 0,5 typ. 0,12 PL w 2,0 2,0 2,0 IG A typ. 0,22 < 0,25 typ. 0,21 GB dB typ. 7 > 6 typ. 12 typ. 66 > 65 typ. 75 Zj n 5 + J11 VL mS 17-J19 MECHANICAL DATA Fig.1 TO 39/1; collector connected to case. Dimensions In mm 8,5 max max ^max Maximum lead diameter is guaranteed only for 12,7 mm. NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NI Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC134) Collector-base voltage (open emitter) peak value Collector-emitter voltage (Vg^ = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (average) Collector current (peak value) f > 1 MHz Total power dissipation up to Tcase = 90 °C f > 10 MHz Storage temperature Operating junction temperature THERMAL RESISTANCE From junction to case From mounting base to heatsink with a boron nitride washer for electrical insulation VCBOM max- 36 v VCESM VCEO VEBO IC(AV) ICM Ptot Tstg Ti Rth j-c Rth mb-h max. max. max. max. max. max. -65 to max 0.7 2.0 3.0 +150 165 2.5 V V V A A W K/W K/W CHARACTERISTICS Tj = 25 °C unless otherwise specified Breakdown voltages Collector-base voltage open emitter, Ic = 10 mA Collector-emitter voltage VBE = 0; IC = 10 mA Collector-emitter voltage open base, IG = 25 mA Emitter-base voltage open collector, IE = 1,0 mA Collector-emitter saturation voltage 1C = 100 mA; IB = 20 mA D. C. current gain IQ = 100 mA; VCE = 5 V Transition frequency IC = 200 mA; VCE = 5 V; f = 500 MHz Collector capacitance at f = 1 MHz IE = ie = 0; VCB = 10 v Feedback capacitance at f = 1 MHz Ic = 20 mA; VCE = 10 V V(BR)CBO > V(BR)CES > V(BR)CEO > V(BR)EBO > VcEsat typ. hFE W. 0.1 V V V V V fT typ. 1400 MHz -CT typ. typ. 6.5 PF 9.0 pF 4.8 pF