BLX39 NJSEMI | Alldatasheet
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Technical content
tSE.mi-ConcLucko'i tPioducti, Una.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BLX39 TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLX39 is Designed for broadband amplifier operations up to 175 MHz. FEATURES:
- PG = 7.6 dB min. at 40 W/175 MHz
- Emitter Resistors Ballasted
- Omnigold™ Metalization System MAXIMUM RATINGS Ic VCB VCE PDISS L TSTG 8JC 5.0 A 65V 35V
60 W @ Tc = 25
-65 °C to +200 ° -65 °C to +150° C C 2.9 °C/W PACKAGE STYLE .380 STUD .112x45"- |- A— CHARACTERISTICS SYMBOL BVcEo BVCES BVEBO ICES hFE C0|, PG T|C TEST CONDITIONS lc = 50 mA lc = 200 mA IE = 10mA VE = 28 V VCE = 5.0V IC = 1.0A VCB = 28 V f = 1 .0 MHz VCE = 28V P|N = 7.0 W f= 175 MHz MINIMUM 4.0 7.6 TYPICAL MAXIMUM 100 UNITS V V V mA ... PF dB NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NI Semi-Conductors encourages customers to vurify that datasheets are current before placing orders. Ounlitv