BLW98 NJSEMI | Alldatasheet
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Technical content
^zmi-L-onauctoi , O ne.
20 STERN AVE,
SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 UHF linear power transistor BLW98
DESCRIPTION
N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers of TV transposers and transmitters in band IV-V, as well as for driver stages in tube systems. FEATURES:
- diffused emitter ballasting resistors for an optimum temperature profile;
- gold sandwich metallization ensures excellent reliability. The transistor has a 1/4" capstan envelope with ceramic cap. All leads are isolated from the stud. QUICK REFERENCE DATA R.F. performance in linear amplifier MODE OF OPERATION class-A class-A 'vision MHz 860 860 VC6 V Ic mA 850 850 Th C dim<1> dB -60 -60 P m o sync W > 3,5 typ. 4,4 Gp dB > 6,5 typ. 7,0 Note 1. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), zero dB corresponds to peak sync level. PIN CONFIGURATION PINNING-SOT122A. Top view Fig.1 Simplified outline. SOT122A. PIN
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
UHF linear power transistor BLW98 IG (A) 10-1 (1) Seco tt -+- Th!= l\\0 "C^ X nb = 2 GP7I7 m c — 1— — h
10 VCE(V)
nd breakdown limit ( ndependent of temperature) Fig.2 D.C. SOAR. 102 THERMAL RESISTANCE (dissipation = 21,25 W; Tmb = 82,75 °C, Th = 70 "C) From junction to mounting base From mounting base to heatsink RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value); VBE = 0 VCESM open base Emitter-base voltage (open collector) Collector current d.c. lc (peak value); f> 1 MHz ICM Total power dissipation at Th = 70 °C Ptot Storage temperature Tstg Operating junction temperature T, max. max. max. 50 V 27 V 3,5 V max. 2 A max. 4 A max. 21,5 W -65 to+150 °C max. 200 "C Ptot (W) C Fig X MGP7I8 ) 50 Th(oC) 100 3 Power derating curve vs. temperature. Rfhj-mb Rth mb-h 5,45 K/W 0,6 K/W
UHF linear power transistor BLW98 Rth j-h (K/W) Plot (W) Fig.4 Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink and junction temperature as parameters. (R^ mb-h = 0,6 K/W.) Example Nominal class-A operation (without r.f. signal): VCE = 25 V; lc = 850 mA; Th = 70 °C. Fig.4 shows: Rthj-h max. 6,05 K/W TJ max. 200 "C Typical device: Rthj-h typ. 5,35 K/W TJ typ. 183 °C
UHF linear power transistor BLW98 PACKAGE OUTLINE Studded ceramic package; 4 leads SOT122A 10tnm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A 597 474 585 ! 0.18 5.58 ! 0.14 7.50 723 6,48 7.24
6.22 I 693
27.56 ! 9,91 25.78 I 9.14 M1 M ! N t M w 3.18 1,66 11 82 1 39 11 04 1,02 3,86 2.92 3.38 2.74 W w 8-32 UNC 0381 90°