BLW96 NJSEMI | Alldatasheet
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(].£.I±£.L) ^zml-t-onauckoi iJ^iodueti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 HF/VHF power transistor BLW96
DESCRIPTION
N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power industrial and military transmitting The transistor presents excellent performance as a linear amplifier in s.s.b. applications. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Transistors are supplied in matched hpE groups. The transistor has a Vi' flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION s.s.b. (class-AB) c.w. (class-B) s.s.b. (class-A) VCE V f MHz 1,6-28 108 PL W 25 -200 (P. E. P.) 200 50(P.E.P.) Gp dB > 13,5 typ. 6,5 typ. 19 > 40<1> typ. 67 dB < -30 typ. -40 dB < -30 < -40 'C(ZS) Oc) A 0,1 (6) (4) Note 1. r|dtat200WP.E.P. PIN CONFIGURATION PINNING-SOT121B. Fig.1 Simplified outline. SOT121 B. PIN NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value VCESM max. 110 V Collector-emitter voltage (open base) VCEO max. 55 V Emitter-base voltage (open collector) VEBO max. 4 V Collector current (average) IC(AV) max. 12 A Collector current (peak value); f> 1 MHz ICM max. 40 A R.F. power dissipation (f > 1 MHz); Tmb = 45 °C Prf max. 340 W Storage temperature Tstg -65 to + 150 "C Operating junction temperature Tj max. 200 "C VCE (V) Fig.2 D.C. SOAR. 400 I Continuous d.c. operation II Continuous rf operation, f> 1 MHz III Short-time operation during mismatch, f > 1 MHz Fig.3 Power/temperature derating curves. THERMAL RESISTANCE (dissipation = 150 W; Tmb = 100 °C, i.e. Th = 70 °C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rthj-mb(dc) Rthj-mb(rf) Rth mb-h 0,63 K/W 0,45 K/W 0,2 K/W
Tj = 25 'C Collector-emitter breakdown voltage VBE = 0; lc = 50 mA Collector-emitter breakdown voltage open base; lc = 200 mA Emitter-base breakdown voltage open collector; IE = 20 mA Collector cut-off current VBE = 0; VCE = 55 V Second breakdown energy; L = 25 mH, f = 50 Hz open base RBE =10 Q D.C. current gain'1' lc = 7 A; VCE = 5 V D.C. current gain ratio of matched devices(1' lc = 7 A; VCE = 5 V Collector-emitter saturation voltage<1) IC = 20A;IB = 4A Transition frequency atf = 100 MHz<2' -IE- 7A;VCB = 45V -IE = 20 A; VCB = 45 V Collector capacitance at f = 1 MHz IE = le = 0; VCB = 50 V Feedback capacitance atf = 1 MHz lc= 150mA; VCE = 50 V Collecting-flange capacitance Notes 1. Measured under pulse conditions: tp < 300 (is; 8 < 0,02. 2. Measured under pulse conditions: tp < 50 |^s; 6 < 0,01. V(BR)CES V(BR)CEO V(BR)EBO ESBO ESBR typ. 15 to typ. 110 V 55 V 4 V 10 mA 20 mJ 20 mJ 1,2 1,9 V typ. 235 MHz typ. 245 MHz Cc typ. 280 pF Cre typ. 170 pF Crf typ. 4,4 pF
Flanged ceramic package; 2 mounting holes; 4 leads SOT121B U3- 10 mm scale mm inches DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b 5.82 5.56 0229 0.219j c 0.16 010 0,006 0.004 D 1286 1259 0506 0496 12,83 1257 0.505 0.495 F 2.67 2.41 0,105 0.095 H 2845 25.52 1.120 1 005 L 793 6.32 0312 0.249 P 3,30 305 0.130 0.120 C 4.4 3.9 0.1 0,1 Q 4.45 3.91 0.175 0,154 q 18,42 0.725 Ui 2490 2463 098 097 6,4i 52; 025 0.24 1232 12.06 0485 0475 WT 0.51 002 1 02 0.04 45° OUTLINE VERSION SOT121B REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-28