BLW91 NJSEMI | Alldatasheet
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, Unc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 BLW91 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the is guaranteed to withstand infinite VSWR at rated output power. High reliability is ensured by a gold sandwich metallization. The transistor is housed in a V«," capstan envelope with a ceramic cap. All leads are isolated from the stud. QUICK REFERENCE DATA R.F. performance up to Th = 26 °C in an unneutralized common-emitter class-B circuit de of operation c.w. VCE V f MHz 470 PL w GP dB >60 MECHANICAL DATA Fig.1 SOT122A. t 1,52 Dimensions in mm — 0,14 x metal 8-32UNC 8,5 35 - max~*~ 3,25 2,80"* ^ 12,0 ^ 11,0 Torque on nut; min. 0,75 Nm Diameter of clearance hole in heatsink: max. 4,2 mm. (7,5 kg cm) Mounting hole to have no burrs at either end. max. 0,85 Nm De-burring must leave surface flat; do not chamfer or (8,5 kg cm) countersink either end of hole. When locking is required an adhesive is preferred instead of a lock washer. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discoveYed in its use. Nl Semi-Conductors encourages customers to verify rhat datasheets are current before pfacing orders.
Limiting values in accordance with the Absolute Maximum System Collector-emitter voltage (peak value); VBE - ° VCESM open base VcEO Emitter-base voltage (open collector) V6BO Collector current d.c. or average (peakvalue);f>1 MHz Total power dissipation up to Tmb - 35 °C R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Storage temperature Operating junction temperature 7ZB3338 max. max. max. 60 V 30 V 4 V 'c; IC(AV) 'CM ptot Prf Tstg max. max. max. max. -65 to max. 1,5 A 3,5 A 30 W 32,5 W + 150 °C 200 °C P. . tot (W) on m j s V s s s i s s fc s V S 3340 V T 100 Fig. 2 D.C. SOAR. Fig. 3 Power derating curves vs. temperature. I Continuous d.c. operation II Continuous r.f. operation III Short-time operation during mismatch THERMAL RESISTANCE (dtssipation = 10 W; Tmb = 76 oc, i.e. Th = 70 °C) From junction to mounting base (d,c. and r.f. dissipation) Rtn i.^ - 6,2 K/W From mounting base to heatsink Rth mb-h = 0,6 K/W
Tj = 25 °C Collector-emitter breakdown voltage VBE = 0; IC - 10 mA Collector-emitter breakdown voltage open base; Ic = 50 mA Emitter-base breakdown voltage open collector; Ig = 4 mA Collector cut-off current VBE = 0; VCE = so v Second breakdown energy; L = 25 mH; f = 50 Hz open base V(BR)CES V(BR)CEO V(BR)EBO D.C. current gain * lc = 0,6 A; VCE " 5 V Collector-emitter saturation voltage * lc = 2,0 A; IB = 0,4 A Transition frequency at f = 500 MHz -IE = 2,OA;VCB = Collector capacitance at f = 1 MHz Feedback capacitance at f - 1 MHz lc = 20 mA; VCE = 28 V Collector-stud capacitance ESBO ESBR "FE vCEsat ff Cre 60 V 30 V 4 V 4 mA 2 mJ 2 mJ typ. 40 10 to 100 typ. 1,0 V typ. 1,2 GHz typ. 1,0 GHz typ. 17 pF typ. 8,5 pF typ. 1,2 pF