BLW90 NJSEMI | Alldatasheet
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, U na.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 UHF power transistor BLW90
DESCRIPTION
N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand infinite VSWR at rated output power. High reliability is ensured by a gold sandwich metallization. The transistor is housed in a V4" capstan envelope with a ceramic cap. All leads are isolated from the stud. QUICK REFERENCE DATA R.F. performance up to Th = 25 "C in an unneutralized common-emitter class-B circuit MODE OF OPERATION c.w. VCE V f MHz 470 PL W Gp dB >11 >55 PIN CONFIGURATION Top view Fig.1 Simplified outline. SOT122A. PINNING-SOT122A. PIN NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Qunlih/
Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value); VBE = 0 VCESM open base VCEO Emitter-base voltage (open collector) VEBO Collector current d.c. or average lc; lc(AV) (peak value); f> 1 MHz ICM Total power dissipation (d.c. and r.f.) up to Tmb = 25 'C Pt0t Storage temperature Tstg max. max. max. 60 V 30 V 4 V Operating junction temperature max. 0,62 A max. 2,0 A max. 18,6 W -65 to+ 150 'C max. 200 "C Fig.2 D.C. SOAR. 100 I Continuous d.c. and r.f. operation II Short-time operation during mismatch Fig.3 Power derating curves vs. temperature. THERMAL RESISTANCE (dissipation = 6 W; Tmb = 73,6 °C, i.e. Th = 70 °C) From junction to mounting base (d.c. and r.f. dissipation) From mounting base to heatsink Rth j-mb Rth mb-h 9,0 KM/ 0,6 KM/
T, = 25 'C Collector-emitter breakdown voltage VBE = 0; lc = 4 mA Collector-emitter breakdown voltage open base; lc = 20 mA Emitter-base breakdown voltage open collector; IE = 2 mA Collector cut-off current VBE = 0; VCE = 30 V Second breakdown energy; L = 25 mH; f = 50 Hz open base RBE= 10 O. D.C. current gain <1> lc = 0,3 A; VCE = 5V Collector-emitter saturation voltage (1> lc= 1,0 A; IB = 0,2 A Transition frequency at f = 500 MHz (1) -IE = 0,3 A; VCB = 28 V -IE= 1,0 A; VCB = 28V Collector capacitance at f = 1 MHz IE = le = 0; VCB = 28 V Feedback capacitance at f = 1 MHz lc = 20 mA; VCE = 28 V Collector-stud capacitance Note 1. Measured under pulse conditions: tp < 200 u,s; 8 < 0,02. V(BR)CES V(BR)CEO V(BR)EBO ICES ESBO ESBR VcEsat fr fT Cre cns > 60 V > 30 V > 4V < 2 mA > 1 mJ > 1 rnJ typ. 40 10 to 100 typ. 0,9 V typ. 1,2 GHz typ. 0,9 GHz typ. 8,4 pF typ. 3,6 pF typ. 1,2 pF
Studded ceramic package; 4 leads SOT122A -* — — [ -)... .x" Jf ceramic ^-BeO ^ metal — fAl t -02- — H 10mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.97 4,74 b 585 5.58 c 018 0.14 D 7.50 7.23 6.48 622 724 693 H 27,56 2578 -<- - w 9.91 914