BLW89

BLW89 NJSEMI | Alldatasheet

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QS.IIE.IJ ^zmi-donauckoi ^Pioaucti, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 BLW89 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the is guaranteed to withstand infinite VSWR at rated output power. High reliability is ensured by a gold sandwich metallization, The transistor is housed in a 14" capstan envelope with a ceramic cap. All leads are isolated from the stud. QUICK REFERENCE DATA R.F. performance up to Tn = 25 °C in an unneutralized common-emitter class-B circuit mode of operation c.w. VCE V f MHz 470 PL w Gp dB >12 fl >50 MECHANICAL DATA Fig.1 SOT122A. 5,9 —(4x) (4x) Dimensions in mm

• 0,14 j metal 8-32UNC -- 8,5—* t 6,36 - 3.3 f max"*" 3,25 2,80~* ^ 12.0 ^ 11,0 ,BaO ^ceramic Torque on nut: min. 0,75 Nm Diameter of clearance hole in heatsink: max. 4,2 mm. (7,5 kg cm) Mounting hole to have no burrs at either end. max. 0,85 Nm De-burring must leave surface flat; do not chamfer or (8,5 kg cm) countersink either end of hole. When locking is required an adhesive is preferred instead of a lock washer. NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify rhat datasheets are current before placing orders. Qualitv

Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage {peak value); VSE = 0 open base Emitter-base voltage (open collector) Co 11 actor current d.c. or average (peakvalue);f>1 MHz Total power dissipation (d.c. and r.f.) up to Storage temperature Operating junction temperature JL (A) 0,5 Tmb<SO°C Th = 70 5 10 20 3C VCE (V) Fig. 2 D.C. SOAR. 50 »C ^tot (W) n VCESM max- 60 v VCEO maXi so v VEBQ max. 4 V IG; 'C(AV) max- °'32 A 'CM max- 1,0 A ; Ptot max. 9,6 W Tstg -65to + 150 °C Tj max. 200 °C 7Z83367 *Hy V ^ ^ s 100 Fig. 3 Power derating curve vs. temperature. THERMAL RESISTANCE (dissipation = 3,5 W; Tmb = 72 °C, i.e. Th = 70 °C) From junction to mounting base (d.c. and r.f. dissipation) Rth j-mb From mounting base to heatsink Rth mb-h 13,0 K/W 0,6 K/W

Tj = 25 °C Collector-emitter breakdown voltage VBE = 0; \\c - 2 mA Collector-emitter breakdown voltage open base; IQ = 10 mA Emitter-base breakdown voltage open collector; IE - 1 mA Collector cut-off current VBE = 0;VCE = 30V Second breakdown energy; L = 25 mH; f = 50 Hz open base RBE = 10 si D.C. current gain * IC = 0,15 A; VCE = 5 V Collector-emitter saturation voltage * IC = 0,5 A; IB = 0,1 A Transition frequency at f = 500 MHz * -IE = 0,15 A; VCB = 28 V -IE = 0,50A;VCB = 28V Collector capacitance at f = 1 MHz

1 MHz

V(BR)CES V(BR)CEO V(BR)EBO 'CES ESBO ESBR hFE vCEsat fT 60 V 30 V 4 V 1 mA 0,5 mJ 0,5 mJ Feedback capacitance at f = lc=10mA;VCE = 28V Coliector-stud capacitance typ. 40 10 to 100 typ. 0,9 V typ. 1,20 GHz typ. 0,85 GHz typ. 5,5 pF typ. 2 pF typ. 1,2 pF