BLW86 NJSEMI | Alldatasheet
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J , iJ nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 HF/VHF power transistor BLW86
DESCRIPTION
N-P-N silicon planar epitaxial transistor intended for use in class-A, transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Matched hpE groups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to Th = 25 "C MODE OF OPERATION C.w. (class-B) s.s.b. (class-AB) s.s.b. (class-A) VCE V f MHz 175 1,6-28 1,6-28 PL w 5-47,5 (P.E.P.) 17(PE.P) Gp dB > 7,5 typ. 19 typ. 22 n > 70 typ. 45 Zj 0,7+J1,3 YL mS 110 -J62 dB typ. -30 typ. -42 PIN CONFIGURATION PINNING-SOT123 Fig.1 Simplified outline and symbol. PIN NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quolitv
Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value VCESM Collector-emitter voltage (open base) VCEO Emitter-base voltage (open-collector) VEBO Collector current (average) IC(AV) Collector current (peak value); f> 1 MHz ICM R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Prf Storage temperature Tstg Operating junction temperature Tj 10 - Fig.2 D.C. SOAR. 65 V 36 V 4 V 4 A 12 A 105 W -65 to+ 150 JC max. 200 C max. max. max. max. max. max. 100 I Continuous dc operation II Continuous r.f. operation III Short-time operation during mismatch Fig.3 R.F. power dissipation; VCE < 28 V; f > 1 MHz. THERMAL RESISTANCE (dissipation = 45 W; Tmb = 83,5 °C, i.e. Th = 70 °C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rthj-mb(dc) Rfh j-mb(rf) Rth mb-h 2,65 K/W 1,95 K/W 0,3 K/W
Tj = 25 °C unless otherwise specified Collector-emitter breakdown voltage VBE = 0; lc = 25 mA Collector-emitter breakdown voltage open base; lc= 100 mA Emitter-base breakdown voltage open collector; IE = 10 mA Collector cut-off current VBE = 0; VCE = 36 V Second breakdown energy; L = 25 mH; f = 50 Hz open base D.C. current gain'1' lc = 2,5 A; VCE = 5 V D.C. current gain ratio of matched devices^) lc = 2,5 A; VCE = 5 V Collector-emitter saturation voltaget1' lc = 7,5 A; IB =1,5 A Transition frequency at f = 100 MHz(1' -IE = 2,5 A; VCB = 28 V -IE = 7,5 A; VCB = 28 V Collector capacitance at f = 1 MHz IE = la = 0; VCB = 28 V Feedback capacitance at f = 1 MHz lc = 100 mA; VCE = 28 V Collector-flange capacitance Note 1. Measured under pulse conditions: tp < 200 us; 8 < 0,02. V(BR)CES V(BR)CEO V(BR)EBO ICES ESBO ESBR HFE VcEs fT fT Cre Ccf 4 — 65 V 36 V 4 V 10 mA 8 mJ 8 mJ typ. 45 10 to 80 < 1,2 typ. 1,5 V typ. 570 MHz typ. 570 MHz typ. 82 pF typ. 54 pF typ. 2 pF Fig. 4 Typical values; VCE = 28 V. VBE <v)
Flanged ceramic package; 2 mounting holes; 4 leads SOT123 A * D 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) F