BLW85 NJSEMI | Alldatasheet

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^£m.L-Cona\\j.ctoi LPiodueti, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 HF/VHF power transistor BLW85

DESCRIPTION

N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. Matched hpE groups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION c.w. (class-B) s.s.b. (class-AB) VCE V 12,5 12,5 f MHz 175 1 ,6-28 PL W 3-30 (RE. P.) Gp dB > 4,5 typ. 19,5 n > 75 typ. 35 Zi Q 1.4+J1.6 ZL D 2,7-j1,3 dB typ. -33 PIN CONFIGURATION PINNING-SOT123 Fig.1 Simplified outline and symbol. PIN NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Qnnlih/

Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value VCESM Collector-emitter voltage (open base) VCEO Emitter-base voltage (open-collector) VEBO Collector current (average) IC(AV) Collector current (peak value); f > 1 MHz ICM R.F. power dissipation up to (f > 1 MHz); Tmb = 25 C P^ Storage temperature Tstg Operating junction temperature T, max. 36 V max. 16 V max. 4 V max. 9 A max. 22 A max. 105 W -65 to + 150 UC max. 200 "C VCE (V) Fig.2 D.C. SOAR. continuous r f operation 1 derate by "" 0.58W/K" continuous XN d,c, operation derate by 0.43 VWO s

100 Th(,,c) 150

Fig.3 R.F. power dissipation; VCE < 16,5 V; f> 1 MHz. THERMAL RESISTANCE (dissipation = 30 W; Tmb = 79 °C, i.e. Th = 70 °C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rfh j-mb(dc) Rth j-mb(rf) Rth mb-h 2,5 K/W 1,8 K/W 0,3 K/W

Tj = 25 'C Collector-emitter breakdown voltage VBE = 0; lc = 50 mA Collector-emitter breakdown voltage open base; IG = 1 00 mA Emitter-base breakdown voltage open collector; IE = 25 mA Collector cut-off current VBE = 0; VCE = 18V Second breakdown energy; L = 25 mH; f = 50 Hz open base RBE = 10Q D.C. current gain'1' lc = 4 A; VCE = 5 V D.C. current gain ratio of matched devices'1' lc = 4 A; VCE = 5 V Collector-emitter saturation voltage'1' lc= 12, 5 A; IB = 2,5A Transition frequency atf = 100 MHz'1' -IE= 4A;VCB = 12,5V -IE= 12, 5 A; VCB = 12,5V Collector capacitance atf = 1 MHz |E = |e = 0; VCB= 15V Feedback capacitance at f = 1 MHz lc = 200 mA; VCE = 15 V Collector-flange capacitance Note 1 . Measured under pulse conditions: tp < 200 us; 5 < 0,02. V(BR) CES V(BR) CEO V(BR)EBO ICES ESBO ESBR hFE hFE1/hFE2 VcEsat fT fT cc Cre Ccf > 36 > 16 > 4 < 25 > 8 > 8 typ. 50 1 0 to 80 < 1,2 typ. 1,5 typ. 650 typ. 600 typ. 120 typ. 82 typ. 2 V V V mA mJ mJ V MHz MHz PF PF PF

Flanged ceramic package; 2 mounting holes; 4 leads SOT123A

  • ) — *. T F i ..L rm 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT