BLW83 NJSEMI | Alldatasheet
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'J. Cx £ii£.u J 10 aunt i, One.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BLW83 TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLW83 is Designed for use in transmitting amplifiers operatimg in applications as linear amplifier in class-A and AB. FEATURES:
- PG = 20 dB min. at 10 W/30 MHz
- IMD3 = -30 dBc max. at 10 W(PEP)
- OmnigoW* Metalization System MAXIMUM RATINGS Ic VCES VCEO VEBO PDISS L TSTG 9jc 3.0 A 65V 36V 4.0V
80 W @ Tc = 25
-65 °C to +200 ° -65 °C to +150° C C 2.2 °C/W PACKAGE STYLE 112X45 — — E ''^- B '"--^ .-' 7 r> _ c— :^^ D|M MINIMUM A ,220/5,59 B 786/19.94 C , .720/18.29 D .970/24.64 E F ,004/0,10 G 085/2.16 H 160/4.06 ! i J | .240/6.10 : .3804LFLG -. ' ""A ^ , \\ 0.125NOM C ..'•'/ FUL1-R -i. J -*-] f 1 TG? I MAXIMUM ,230/5,84 .980/24.89 385/9.78 006/0 15 180/4.57 .280/7.11 .255/6.48 I CHARACTERISTICS SYMBOL BVCES BVCEO BVEBO ICES hpE C0b GpE IMD3 TEST CONDITIONS lc= 10mA lc= 50 mA IE= 10mA VCE = 36 V Vce = 5.0 V lc = 1 .25 A VCB= 12.5V f= 1.0 MHz VCC = 26V ICQ = 25mA f=30MHz POUT = 10W(PEP) MINIMUM 4.0 TYPICAL 100 -30 MAXIMUM 100 UNITS V V V mA PF dB dB NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors