BLW81 NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
-^dnauator Lpioauoti, Unc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 UHF power transistor BLW81
DESCRIPTION
N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the supply voltages up to 13,5 V. The resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditions. The transistor is housed in a V4" capstan envelope with a ceramic cap. QUICK REFERENCE DATA R.F. performance up to Th = 25 "C in an unneutralized common-emitter class-B circuit MODE OF OPERATION c.w. c.w. VCE V 12,5 12,5 f MHz 470 175 PL w Gp dB > 6,0 typ. 13,5 n > 60 typ. 60 Zj ti 1,3+J2,5 1,2- JO, 6 YL mS 150-J66 140-J80 PIN CONFIGURATION PINNING-SOT122A. Top view Fig.1 Simplified outline. SOT122A. PIN PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information rurnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use NI Semi-Conductors encourages customers to verify rhat datasheets are current before placing orders.
Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value VCESM Collector-emitter voltage (open base) VCEO Emitter-base voltage (open collector) VEBO Collector current (d.c. or average) Ic Collector current (peak value); f> 1 MHz ICM R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Ptot Storage temperature Tstg Operating junction temperature T, 36 V 17 V 4 V 2,5 A 7,5 A 40 W -65 to+150 JC max 200 "C max max max max max max Fig.2 rf power dissipation VCE< 16.5V f>1 MHz Fig. 3 THERMAL RESISTANCE From junction to mounting base From mounting base to heatsink Rthj-mb Rth mb-h 4,3 K/W 0,6 K/W
TJ = 25 "C Breakdown voltages Collector-emitter voltage VBE = 0; lc = 25 mA Collector-emitter voltage open base; lc = 100 mA Emitter-base voltage open collector; IE = 10 mA Collector cut-off current VBE = 0; VCE=17V D.C. current gain d) lc=1,25A;VCE = 5V Collector-emitter saturation voltage ir> IC = 3,75A; IB = 0,75 A Transition frequency at f = 500 MHz <1> lc = 1,25 A; VCE = 12,5V lc = 3,75 A; VCE = 12,5V Collector capacitance at f = 1 MHz lE = le = 0; VCB= 12,5V Feedback capacitance at f = 1 MHz lc = 100 mA;VCE= 12,5V Collector-stud capacitance Note 1. Measured under pulse conditions: tp < 200 us; 8 < 0,02. V(BR)CES V(BR)CEO V(BR)EBO ICES VCE fr fr typ typ 36 V 17 V 4 V 10 mA typ 0,75 V typ 1,3 GHz typ 0,9 GHz 34 pF typ 18 pF typ 1,2 pF
- »— D M - W 10mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) L UNIT mm A 5.97 4,74 b 585 558 c 0.18 0.14 D 7.50 723 6.48 6.22 724 693 M 1.66 1 39 N 11,82 11 04 max. 1 02 3.86 292 Q 338 274 W 8-32 UNC a 90°