BLW79 NJSEMI | Alldatasheet
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'JEIISU , U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BLW79 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the transistor provides protection against device damage at severe load mismatch conditions. The transistor is housed in a '/!" capstan envelope with a ceramic cap. QUICK REFERENCE DATA R.F. performance up to Tn - 25 °C in an unneutralized common-emitter class-B circuit mode of operation c.w. c.w. VCE V 12,5 12,5 f MHz 470 175 PL w dB > 9,0 typ. 13,5 > 60 typ. 60 ii 3,5 + jO,4 4,2-j3,4 YL mS 28-J38 25-J24 MECHANICAL DATA Fig.1 SOT122A. 5,9 * 5,5 r-(4x) Dimensions in mm 1,52 *\\ 7; 6,35 8-32UNC f -pb 3,25 2,80 12,0 11,0 ~" -^0,14 / metal 5,6 max Torque on nut: min. 0,75 Nm Diameter of clearance hole in heatsink: max. 4,2 mm. (7,5 kg cm) Mounting hole to have no burrs at either end. max. 0,85 Nm De-burring must leave surface flat; do not chamfer or (8,5 kg cm) countersink either end of hole. When locking is required an adhesive is preferred instead of a lock washer. NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of"going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N J Semi-Conductors encourages customers to verify that datasheets are current before placing orders, Quality Semi-Conductors
Limiting values in accordance with the Absolute Maximum System (IEC134) Collector-emitter voltage (Vgg = 0) peak value VCESM max 36 V Collector-emitter voltage (open base) ^CEO max ^ V Emitter-base voltage (open collector) VEBO max 4V Collector current (d.c.) IQ max 0,5 A Collector current (peak value); f> 1 MHz ICM rnax 1,5 A Total power dissipation (d.c. and r.f.) up to T^ = 70 °C ?tQt max 8,5 W 7Z77140 (A) 0,7 0,6 0,5 0,4 0,3 0,2 0,1 D.C. SOAR „__ — i Th = 70 °C > 6 7 8 9 10 w „,- (V) 2t ID Prf (W) n r,t. power dissipat on continuous operation time operation durinc VCE< 16,5V f > 1 MHz erate by 1,066 W/K S -J-4- -1 J X and she mismal >rt ch Fig.2.
50 Th (°
Fig.3. 100 Storage temperature Operating junction temperature 'stg -65 to+150 °C max 200 °C THERMAL RESISTANCE From junction to mounting base From mounting base to heatsink Rth j-mb Rth mb-h 14,5 K/W 0,6 K/W
Tj = 25 °C Breakdown voltages Collector-emitter voltage VBE = 0; lc = 5 mA Collector-emitter voltage open base; lc = 25 mA Emitter-base voltage open collector; IE = 2 mA Collector cut-off current : = 0; VCE = 17 V D.C. current gain * 1C = 250 mA; VCE = 5 v Collector-emitter saturation voltage * lc = 750mA; IB = 150mA Transition frequency at f = 500 MHz * lc = 250 mA; VCE = 12,5 V lc = 750 mA; VCE = 12,5V Collector capacitance at f - 1 MHz IE = ie = 0; VCB -12,5 v Feedback capacitance at f = 1 MHz lc = 20mA; VCE = 12,5V Collector-stud capacitance V(BR)CES > 36 V V(BR)CEO > 17 v V(BR)EBO > 4V ICES < 2 mA > 10 typ 35 typ 0,6 V typ 1,5 GHz typ 1,0 GHz vCEsat typ 8 pF typ 3,6 pF typ 1,2 pF